NPN 1000V TRANSISTOR Search Results

NTE2311

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V

2SC2688

Abstract: 2SC2688L NPN Transistor VCEO 1000V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

2SC2688

Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

NPN Transistor VCEO 1000V

Abstract: 2SC2688 2SC2688L transistor T 023 XT60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

2SC2688

Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

2SC5264

Abstract: 2SC5264LS 2079d
Contextual Info: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

ta1238

Abstract: TA-1238 2SC5304 2SC5304LS
Contextual Info: Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

ta1238

Abstract: TA-1238 2SC5304 EN5883
Contextual Info: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

2069B

Abstract: 2SC5420
Contextual Info: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

d 5287

Abstract: 2SC5264
Contextual Info: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

2069B

Abstract: 2SC5420
Contextual Info: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

NPN Transistor VCEO 1000V

Abstract: 2SC5420 1000V 20A transistor
Contextual Info: Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Contextual Info: ^Szmi-Conduetoi ^Products., {Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJF18006 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- 2 :V(BR)CBO=1000V(Min)

Contextual Info: *L, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE18008 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- •>. ^ :V (B R)CBo= 1000V(Min) • High Switching Speed

Contextual Info: , Una. LS TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE18004 Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage: V(BR)CBO= 1000V(Min) • High Switching Speed PIN 1.BASE

Contextual Info: , One. u TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 Silicon NPN Power Transistor MJF18004 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed *W ! •?''••

2sc2688

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC2688 NPN SILICON TRANSISTOR N PN SI LI CON T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SC2688 is designed for use in Color TV chroma output circuits. ̈ FEAT U RES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

TIC125

Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
Contextual Info: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0

BUX47A

Abstract: BUX47 BUX47B BY205-400
Contextual Info: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current

NPN Transistor VCEO 1000V

Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Contextual Info: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:

NPN Transistor VCEO 1000V

Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
Contextual Info: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:

npn 1000V 15A

Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in

BUX47A

Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
Contextual Info: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current

2SC3060

Contextual Info: SavantIC Semiconductor Product Specification 2SC3060 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators