NPN CBO 40V CEO 25V EBO 5V Search Results

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

2N3904 TO-92 type

Abstract: 2n4401 Die RJE9018 2n3904 c33 2n3904 C37 mps8097 CBO 40V CEO 25V EBO 5V
Contextual Info: Transistors/Leaded Type USA/European Specification Models • TO-92 Package/NPN Type For General Purpose Small Signal Amplifiers P art No. P a ckage BV cbo M in. BV ceo Min. BV ebo Min. hFE • ! f ° @Vcs Min. Max. @ lc & V ce Max. V e rs a ti V sd sat Max.

2M5087

Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
Contextual Info: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.

Contextual Info: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers

sot83

Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions

SST4124

Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5

MARKING CODE R1C

Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95

2n4494

Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
Contextual Info: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495

BC846-BC848

Abstract: BC846 BC847 BC848
Contextual Info: BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C

Contextual Info: NPN Epitaxial Planar Transistor Formosa MS FMBT2222AW List List. 1 Package outline. 2

BC847

Abstract: BC846-BC848 NPN CBO 40V CEO 25V EBO 5V BC846 BC848
Contextual Info: BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C

solitron transistors

Abstract: SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC “4 / - ' tl v - ,„ • -Ä - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F|fl3böbDa OaOD47t, 7 •• v ; ^ - : ' -• :W i m -1- " - - - - - - -i • -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 2N3751 2N3752

3DD303A

Abstract: CBO 40V CEO 25V EBO 5V 3DD303
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.

BC337

Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
Contextual Info: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J

T523

Abstract: EN4135 2SA1855 2SC483
Contextual Info: O rdering num ber: EN413S 2SA1855/2SC4837 No.4135 SAiYO PNP/NPN Epitaxial P lanar Silicon Transistors i 50V/4A Switing Applications A p p licatio n s •Power supplies, relay drivers, lamp drivers. F e a tu re s • Adoption of FBET and MBIT processes. • Large allowable collector dissipation.

wt smd

Abstract: vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

LB 124 transistor

Abstract: LB 124 d 2N6427 t2929 transistor darlington
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D l ' 7 1 b 4 1 4 3 DOQTITO O I NPN EPITAÄ IA C • SILICON DARLINGTON TRANSISTOR 2N6427 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: Vcio=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

2N4123

Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
Contextual Info: 2N 4123 2N4124 NPN SILICO N IV IIC R O PLANAR EPITAX IA L E L -E G T R O IX H C S GENERAL DESCRIPTION ; The 2N4123 and 2N4124 a re NPN s ilic o n p la n ar e p ita x ia l tr a n s is to r s designed fo r g en e ral purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re

Contextual Info: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30

transistor marking wt

Abstract: SMD TRANSISTOR MARKING BR smd transistor marking 36 2SC4695 MARKING SMD NPN TRANSISTOR BR high vebo
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4695 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High VEBO VEBO 25V . 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process. 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: CPH5504 NPN Epitaxial Planar Silicon Transistor TENTATIVE Application • DC-DC Converters, Relay Drivers ,Lamp Drivers ,Motor Drivers, Strobe lamps. Features • Composite type with 2 NPN transistors contained in package, facilitating high-density mounting.

NTE2524

Abstract: NTE2525
Contextual Info: NTE2524 NPN & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector-Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)