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PFLITSCH GmbH & Co KG BFT-29-29-29-BG T-CONNECTOR FOR CORRUGATED PIPES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFT-29-29-29-BG	Bag			2	1 - 10 $31.51 100 $31.51 1000 $31.51 10000 $31.51	Buy Now
PFLITSCH GmbH & Co KG BFT-29-29-29-BK T-CONNECTOR FOR CORRUGATED PIPES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFT-29-29-29-BK	Bag			2	1 - 10 $31.51 100 $31.51 1000 $31.51 10000 $31.51	Buy Now
ITT Interconnect Solutions FRCIRG08-20-27S-F80-T12-T29-297 - Bulk (Alt: FRCIRG08-20-27S-F8)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FRCIRG08-20-27S-F80-T12-T29-297	Bulk			10	1 - 10 $336.4501 100 $243.5851 1000 $243.5851 10000 $243.5851	Buy Now
Mouser Electronics	FRCIRG08-20-27S-F80-T12-T29-297					1 - 10 $355.09 100 $355.09 1000 $355.09 10000 $355.09	Get Quote
ITT Interconnect Solutions FRCIRG06-20-27S-F80-T12-T29-296 - Bulk (Alt: FRCIRG06-20-27S-F8)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FRCIRG06-20-27S-F80-T12-T29-296	Bulk			10	1 - 10 $332.4468 100 $240.6811 1000 $240.6811 10000 $240.6811	Buy Now
Mouser Electronics	FRCIRG06-20-27S-F80-T12-T29-296					1 - 10 $350.87 100 $350.87 1000 $350.87 10000 $350.87	Get Quote
BURNDY PT29291 Die Case \|Burndy PT29291
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PT29291	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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T2929 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
it8511te Abstract: C929B Asus VARISTOR thm MW772 ICS954310cglf d4105 U2401 IT851 ISL6262CRZ Text: 5 4 3 2 1 TERESA Block Diagram FAN + SENSOR ADM1032ARMZ PAGE 4 CLOCK GEN ICS954310 CPU D D T2060 4xx,5xx Series PAGE 5 DISCHARGER CIRCUIT PAGE 2,3 PAGE 37 FSB 533MHz Power On Sequence PAGE 40 DC/BATT IN GMCH-M Calistoga 943GML B0:02G010009121 LVDS & INV PAGE 12	Original	PDF	ADM1032ARMZ ICS954310 T2060 533MHz 943GML 02G010009121 DDR2-533MHz IT8511E 33MHz 02G010008811 it8511te C929B Asus VARISTOR thm MW772 ICS954310cglf d4105 U2401 IT851 ISL6262CRZ
Untitled Abstract: No abstract text available Text: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code	OCR Scan	PDF	Q62702-C1683 Q62702-C1685 Q62702-C1852 Q62702-C1854 6E3b32Q 0Qlbb73 BCV28 BCV48 T-29-29
2929 transistor Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW Text: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	PDF	mpsa64 625mW MPSA62 T-29-29 100/iA, mpsh17 t-10-fc T-31-21 -100MHz- 2929 transistor t2929 MPSA75 T-31-21 vbe 10v T-29-29 625MW
2929 transistor Abstract: MMBT6427 MMBTA14 SOT-23 J Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D \| 7^4142 OGt^eT! t \| NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	PDF	0075T1 MMBTA14 MMBT6427 T-29-29 OT-23 100jjA, 2929 transistor SOT-23 J
MMBTA63 Abstract: ui35 WO-300 TRANSISTOR 13-h 2929 transistor Text: S A M S U N G SEMICO NDU CTO R INC 14E O 1 7 ^ 4 1 4 2 OOGPiTö *1 \| T -z f-ïf MMBTA63_ PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	PDF	MMBTA63 100mA 100MHz 300jiS, lb4142 T-29-29 ui35 WO-300 TRANSISTOR 13-h 2929 transistor
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 \| NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	MPSA14 T-29-29 625mW 2N6427
Untitled Abstract: No abstract text available Text: S A M S U N G SE MI C O N D U C T OR INC MMBTA64 D \| 7^4142 0007300 3 \| PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	PDF	MMBTA64 T-29-29 OT-23 MMBTA63
Untitled Abstract: No abstract text available Text: 3EE D • û23b32Q Q Q lb b b b NPN Silicon Darlington Transistors _SIEMENS/ S P C L i • • • • 0 « SIP BCV 27 SEMICONDS _ BCV 47 For general A F applications High collector current High current gain Complementary types: B C V 26, B C V 46 PNP	OCR Scan	PDF	23b32Q Q62702-C1152 Q62702-C1154 Q62702-C1474 Q62702-C1501 23b320 BCV27 BCV47 T-29-29
Motorola MPSU95 Abstract: MPSU95 MPS-U95 SILICON SMALL-SIGNAL DICE motorola dice Text: MOTOROLA 6367255 SC í DIODES/OPTOIT MOTOROLA SC "34 PF]Jb3b7ESS DIO DES/O PTO 34 C OUJüUJ,d 38013 D T-29-29 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) MPSAC66 - d ie n o . LINE SOURCE — DMB159 $ PNP This die provides performance similar to that of the following device types:	OCR Scan	PDF	T-29-29 DMB159 MPSAC66 MPSA62 MPSA63 MPSA65 MPSA66 MPSD54 MPSU95 Motorola MPSU95 MPSU95 MPS-U95 SILICON SMALL-SIGNAL DICE motorola dice
Untitled Abstract: No abstract text available Text: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk	OCR Scan	PDF	SMBTA13 SMBTA14 Q68000-A4331 Q68000-A4332 Q6800Q-A6475 Q68000-A6476 23b320
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR I NC 14E \| 711,4142 0007^^6 «1 \| T - t f - ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	PDF	MMBTA63
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D \| 7*11.4:1.42 O O O T a T l b \| NPN EPITAXIAL SILICON TRANSISTOR T-29-29 1 DARLINGTON AMPLIFIER TRANSISTOR :- SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	PDF	MMBTA14 T-29-29 OT-23 MMBT6427
Untitled Abstract: No abstract text available Text: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type	OCR Scan	PDF	23b320 Q62702-C1684 Q62702-C1686 Q62702-C1853 Q62702-C1832 53b350 G01bb77 BCV29 BCV49 T-29-29
transistor sot-23 marking L8 Abstract: MMBT6427 H1030 Text: SAMSUNG S EMICONDUCTOR INC MMBT6427 146 D \| 7^4142 □□□7284 *1 \| -fizf- NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	PDF	MMBT6427 OT-23 100/jA, T-29-29 transistor sot-23 marking L8 H1030

MPSA10 Abstract: MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14 Text: SAMS UN G SEMICONDUCTOR INC MPSA10 14E 0 \| 7«lb4iq2 00073Mb S \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	PDF	000734b MPSA10 T-29-21 625mW 100/iA, lc-10mA, lc-100mA, MPSA25 MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14
Darlington transistor T7 27 Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho Text: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O \| NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)	OCR Scan	PDF	MPSA25 625mW Darlington transistor T7 27 Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
Untitled Abstract: No abstract text available Text: SAMSUNG SPMICONDUCTOR INC 14E S MPSA62 D \| 7^4115 00073b? 3 J PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: V ces=20V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	PDF	00073b? MPSA62 625mW