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    NPN DARLINGTON SOT23 MARKING 1M Search Results

    NPN DARLINGTON SOT23 MARKING 1M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    NPN DARLINGTON SOT23 MARKING 1M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn Darlington SOT23 marking 1m

    Abstract: PMBTA64 NXP date code marking PMBTA13 PMBTA14 NXP MARKING 11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTA13; PMBTA14 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 29 2004 Jan 22 NXP Semiconductors Product data sheet NPN Darlington transistors PMBTA13; PMBTA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF PMBTA13; PMBTA14 PMBTA64. PMBTA13 MAM298 R75/05/pp7 npn Darlington SOT23 marking 1m PMBTA64 NXP date code marking PMBTA13 PMBTA14 NXP MARKING 11

    PMBTA64

    Abstract: pmbta13 PMBTA14 darlington sot23 npn
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTA13; PMBTA14 NPN Darlington transistors Product specification Supersedes data of 1999 Apr 29 2004 Jan 22 Philips Semiconductors Product specification NPN Darlington transistors PMBTA13; PMBTA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF PMBTA13; PMBTA14 PMBTA64. PMBTA13 MAM298 SCA76 R75/05/pp7 PMBTA64 pmbta13 PMBTA14 darlington sot23 npn

    PMBTA64

    Abstract: PMBTA14 PMBTA13
    Text: DISCRETE SEMICONDUCTORS DAT PMBTA13; PMBTA14 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 29 2004 Jan 22 NXP Semiconductors Product data sheet NPN Darlington transistors PMBTA13; PMBTA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF PMBTA13; PMBTA14 PMBTA64. PMBTA13 MAM298 R75/05/pp7 PMBTA64 PMBTA14 PMBTA13

    npn Darlington SOT23 marking 1m

    Abstract: PMBTA64 darlington sot23 npn PMBTA14 PMBTA13
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA13; PMBTA14 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 29 Philips Semiconductors Product specification NPN Darlington transistors PMBTA13; PMBTA14 FEATURES


    Original     		PDF M3D088 PMBTA13; PMBTA14 PMBTA64. PMBTA13 SCA63 115002/00/04/pp8 npn Darlington SOT23 marking 1m PMBTA64 darlington sot23 npn PMBTA14 PMBTA13

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 100ms QW-R206-006

    npn Darlington SOT23 marking 1m

    Abstract: MMBTA13 MMBTA14 MPSA13 MPSA14 marking codes transistors sot b.r
    Text: MMBTA13 and MMBTA14 Darlington Transistors NPN t c u rod P New TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Collector Base Emitter Top View .056 (1.43) .052 (1.33) 3 1 Mounting Pad Layout Pin 1= 2= 3= .016 (0.4) Di i i i 0.079 (2.0) 0.035 (0.9) .102 (2.6)


    Original     		PDF MMBTA13 MMBTA14 O-236AB OT-23) OT-23 MMBTA13 E8/10K npn Darlington SOT23 marking 1m MMBTA14 MPSA13 MPSA14 marking codes transistors sot b.r

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 QW-R206-006

    transistor cross ref

    Abstract: KST13MTF
    Text: KST13/14 KST13/14 Darlington Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCES VEBO


    Original     		PDF KST13/14 OT-23 KST13 KST14 KST14 transistor cross ref KST13MTF

    MPS A13 transistor

    Abstract: MPSA13 mps a13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF MPSA13 MMBTA13 PZTA13 MPSA13 MMBTA13 OT-23 OT-223 MPSA14 MPS A13 transistor mps a13

    TRANSISTOR SMD MARKING CODE WT

    Abstract: marking code 51 SMD Transistor TRANSISTOR SMD CODE PACKAGE SOT23 transistor smd marking NA sot-23 smd transistor 3K TRANSISTOR SMD MARKING CODE 3K smd transistor TN TRANSISTOR SMD MARKING CODE PD CMBT6427 smd TRANSISTOR code marking 05 sot23
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR CMBT6427 SOT-23 Formed SMD Package Marking Code is =1V Darlington Transistor ABSOLUTE MAXIMUM RATINGS


    Original     		PDF QSC/L-000019 CMBT6427 OT-23 C-120 CMBT6427Rev140203E TRANSISTOR SMD MARKING CODE WT marking code 51 SMD Transistor TRANSISTOR SMD CODE PACKAGE SOT23 transistor smd marking NA sot-23 smd transistor 3K TRANSISTOR SMD MARKING CODE 3K smd transistor TN TRANSISTOR SMD MARKING CODE PD CMBT6427 smd TRANSISTOR code marking 05 sot23

    SOT23 .K2D

    Abstract: 417 TRANSISTOR
    Text: MMBTA13,14 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO


    Original     		PDF MMBTA13 OT-23 OT-23 MMBTA14 100mA SOT23 .K2D 417 TRANSISTOR

    Diode marking CODE 1M

    Abstract: MMBTA13 MMBTA14 MPSA13 MPSA14
    Text: MMBTA13 and MMBTA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector Base TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Emitter Top View .056 (1.43) .052 (1.33) 3 1 2 Mounting Pad Layout 0.031 (0.8)


    Original     		PDF MMBTA13 MMBTA14 O-236AB OT-23) MMBTA13 10-May-02 Diode marking CODE 1M MMBTA14 MPSA13 MPSA14

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan     		PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p

    PXTA14

    Abstract: PMBTA64 BST60 BST62 PMBTA14 PMBTA13 BST50
    Text: SM D DARLINGTON TRANSISTORS DESCRIPTION • Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two series-integrated transistors on a single chip. High current versions are excellent for industrial switching applications


    OCR Scan     		PDF OT-89 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 PXTA14 PMBTA64 BST60 BST62 PMBTA14 PMBTA13 BST50

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


    OCR Scan     		PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


    OCR Scan     		PDF OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5

    PMBTA14

    Abstract: PMBTA13
    Text: Philips Semiconductors Product specification NPN Darlington transistors PMBTA13; PMBTA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 base • High DC current gain (min. 10000). 2 e m itte r 3 co lle cto r APPLICATIONS


    OCR Scan     		PDF PMBTA13; PMBTA14 BTA64. BTA13 BTA14 PMBTA14 PMBTA13

    marking r2k

    Abstract: marking r1c GAJ SOT23 R1P SOT-223
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.


    OCR Scan     		PDF OT-23) SSTH30 MMST1130 SC-59/Japanese BCX70K BCX71G BCX71H BCX71J BFS17 marking r2k marking r1c GAJ SOT23 R1P SOT-223

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR I NC MMBT6427 1ME D | 7^4142 0 0 0 7 2 8 4 •*1 | 'f-Z '? . NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT6427 OT-23

    MMBT3960

    Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2


    OCR Scan     		PDF OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1

    marking code ce SOT23

    Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
    Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A IMBT/MMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 Appl45 80jjs; marking code ce SOT23 MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE