MPSA14 Search Results

2N5306

Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

Contextual Info: TN6725A C B TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

mpsa13 636

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA

Contextual Info: MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V

equivalent mpsa14

Abstract: PR05 MMBTA14 MPSA14 PZTA14
Contextual Info: MPSA14 MMBTA14 PZTA14 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*

transistor mpsa 250

Abstract: transistor mpsa 13 equivalent mpsa14 MPSA13 MPSA14
Contextual Info: MPSA13 MPSA14 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC

MPSA13

Abstract: MPSA12 MPSA14 mpsa13 central
Contextual Info: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

MW MARK

Abstract: MMBTA13 MPSA14
Contextual Info: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector

Contextual Info: Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 em itter APPLICATIONS • High gain am plification.

2N5308

Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
Contextual Info: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSA14

Abstract: transistor 625
Contextual Info: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)

MPSA13

Abstract: equivalent mpsa14 MMBTA13 MPSA14 PZTA13
Contextual Info: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

TN6725A

Abstract: equivalent mpsa14 MPSA14 "Darlington Transistor"
Contextual Info: TN6725A CB TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSA14M

Contextual Info: MCC TM Micro Commercial Components MPSA13 MPSA14
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA

MPSA14

Abstract: MPSA64 SC-43A darlington transistor MPSA14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2004 Aug 20 2005 May 04 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA

MPSa14 equivalent

Abstract: mpsa13 equivalent mpsa14 MPSa13 equivalent MPS-A13 PSA13
Contextual Info: TOSHIBA DARLINGTON TRANSISTOR M PSA13,14 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS. FEATURE: High DC Current Gain @ Ic=100mA MPSA13 hFE=10,000 Min. MPSA14 hFE=20,000 Min. 1. EMITTER 2. BASE a COLLECTOR

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

Contextual Info: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector

MPSA12

Contextual Info: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted

equivalent mpsa14

Abstract: MPSa14 equivalent MPSA14
Contextual Info: DC COMPONENTS CO., LTD. MPSA14 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring extremely high current gain. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector

Contextual Info: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS

Contextual Info: MCC TM Micro Commercial Components MPSA13 MPSA14
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA