NPN ECB Search Results

NPN ECB Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

NPN ECB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor potencia Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494 Contextual Info: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP	OCR Scan	fl531BÃ BC546 BC547 BC548 BC549 BC556 BC557 PA6015 PB6015 PA6025 transistor potencia t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494	PDF
c2611 Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238 Contextual Info: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO ICEO	Original	O-126 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SC3417 BD437 BD238 c2611 BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238	PDF
NPN transistor 2n4400 beta value Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924 Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN	OCR Scan	2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644	PDF
2SA673A Abstract: 2SC1213A ic100na NPN transistor ECB TO-92 Contextual Info: 2SA673A 2SC1213A SILICON TRANSISTOR 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage	OCR Scan	2SA673A 2SC1213A 2SA673A 2SC1213A 500mA 400mW 100mA ic100na NPN transistor ECB TO-92	PDF
2N5249 Contextual Info: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current	OCR Scan	2N5249 O-92B 2N5249 100mA 330mW 300fiS, Aug-96	PDF
Contextual Info: IC 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	2N3417 2N3417 500mA	PDF
Contextual Info: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current	OCR Scan	2N5249 2N5249 O-92B 300/iiS, 100mA 330mW Aug-96	PDF
2N3417 Abstract: transistor BO 540 NPN transistor ECB TO-92 Contextual Info: 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation	OCR Scan	2N3417 2N3417 500mA transistor BO 540 NPN transistor ECB TO-92	PDF
TP107B Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138 Contextual Info: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30	OCR Scan	2N3565 2N5133 2N5138 2N5377 2N5378 MPS5308A 2N5306 2N5306A 2N5307 2N5308 TP107B TP107A TP109B tp107 TP252A TP251B MPS-A13 pnp	PDF
NPN transistor ECB TO-92 Abstract: 2N3414 0181 ecb Contextual Info: NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating & Storage Junction Temperature	OCR Scan	2N3414 500mA 100jiA 10fiA NPN transistor ECB TO-92 0181 ecb	PDF
2N5249 Abstract: "Small Signal Amplifier" Contextual Info: 2N5249 NPN SILICON TRANSISTOR TO-92B DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. ECB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation	OCR Scan	2N5249 O-92B 100mA 330mW 10/iA 50PARAMETER 300/xS, Aug-96 "Small Signal Amplifier"	PDF
2SC1815 Abstract: MICRO ELECTRONICS ltd transistor 2SC1815 GR Contextual Info: 2SC1815 NPN SILICON TRANSISTOR TO-92B 2SC1815 is NPN silicon epitaxial transistor designed for RF, AF amplifier and general purpose applications. ECB ABSOLUTE MAXIMUM RATINGS 45 V Collector-Base Voltage vCB0 Collector-Emitter- Voltage VCEO Emitter-Base Voltage	OCR Scan	2SC1815 T0-92B 300mW 41Q321 MICRO ELECTRONICS ltd transistor 2SC1815 GR	PDF
str 6707 Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.	Original	M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202	PDF
2n2712 data sheet Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923 Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 ICES ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0	Original	2N2712 2N2714 2N2923 2N2924 2N2925 2N4289 2N4400 2n2712 data sheet 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923	PDF

BF858 Abstract: BF859 BF857 BP317 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors	Original	M3D067 BF857; BF858; BF859 O-202 MBH794 O-202. BF858 BF859 BF857 BP317	PDF
BF859 Abstract: BF857 BF858 BF859 equivalent Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors	Original	M3D067 BF857; BF858; BF859 O-202 MBH794 BF859 BF857 BF858 BF859 equivalent	PDF
1902 transistor Abstract: BTN2129A3 Contextual Info: CYStech Electronics Corp. Spec. No. : C853A3 Issued Date : 2004.07.14 Revised Date :2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129A3 Description The BTN2129A3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed	Original	C853A3 BTN2129A3 BTN2129A3 R2120 UL94V-0 1902 transistor	PDF
BF422A Abstract: NPN transistor ECB TO-92 1902 transistor BF422 BF422A3 BF423A3 C234A3 Contextual Info: Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF422A3 Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF423A3. Features	Original	C234A3 BF422A3 BF423A3. UL94V-0 BF422A NPN transistor ECB TO-92 1902 transistor BF422 BF422A3 BF423A3 C234A3	PDF
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION	OCR Scan	BF859 115002/00/03/pp8	PDF
NPN transistor ECB TO-92 Abstract: BF420A3 1902 transistor BF420 BF420A3S Contextual Info: Spec. No. : C234A3-A Issued Date : 2004.03.02 Revised Date : 2004.10.18 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF420A3/S Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF421A3/S.	Original	C234A3-A BF420A3/S BF421A3/S. UL94V-0 NPN transistor ECB TO-92 BF420A3 1902 transistor BF420 BF420A3S	PDF
Contextual Info: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON	OCR Scan	160mW T0-92Ã MPS/2N2923 T0-92B MPS/2N2711 12pFnÂ MPS/2N2712 MPSMPS/2N3398 200MHz Dec-95	PDF
302 opto Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar	Original	Q62702-P1641ppe. GET06017 302 opto GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor	PDF
BOX69477 Abstract: 2N5307 2N5308 Contextual Info: 2N 5307 & 2N 5308 NPN DARLINGTON AM P IFIER MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION : The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers* The devices are suitable for preamplifier input stages requir ing high input impedance or very high	OCR Scan	O-92B 300mA 200mA 200mA TELEX-43510 BOX69477 2N5307 2N5308	PDF
2N5307 Contextual Info: 2N 5307 & 2N 5308 NPN DARLINGTON GENERAL DESCRIPTION : A M P IFIER MECHANICAL OUTLINE TO-92B The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers. The devices are suitable for preamplifier input stages requir ing high input impedance or very high	OCR Scan	O-92B 400sM 10ftnA 20MHz 2N5307	PDF

NPN ECB Search Results

NPN ECB Result Highlights (5)

NPN ECB Datasheets Context Search

transistor potencia

c2611

NPN transistor 2n4400 beta value

2SA673A

2N5249

2N3417

TP107B

NPN transistor ECB TO-92

2N5249

2SC1815

str 6707

2n2712 data sheet

BF858

BF859

1902 transistor

BF422A

NPN transistor ECB TO-92

302 opto

BOX69477

2N5307