NPN IE 4A Search Results

BUX98P

Abstract: LB 137 transistor LB 122 transistor LB 122 NPN TRANSISTOR
Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ BUX98P HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . SWITCH MODE POWER SUPPLIES

2SC4685

Contextual Info: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. 53.1 ±0.1 • High DC Current Gain : hFEU = 800-3200 Vce = 2V, Ie = 0.5A) : hFE(2) = 250 (Min.) (VCE = 2V, IC = 4A)

2SC3420

Contextual Info: TOSHIBA 2SC3420 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3420 Unit in mm STOROBO FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hFE = 140-600 (Vce = 2V, Ie = 0.5A) hFE = 70 (Min.) ( V c e = 2V, Ic = 4A)

2N117

Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
Contextual Info: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory

2SC515A

Abstract: 2SC1894 2sc 1894 TRANSISTOR 2SC 635 2sc515
Contextual Info: 2 s c 1894 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O * o 5 - 7- L' Unit in mu Color TV H o rizontal • Ü i Œ T t ; Output A p p l i cations v cbo= îâfn'BBE^IfiW ; 025.OMAX. 1500V ta vCB sat = 5V (Max.) (I q =4A, * -i y f 'S ? + 0.0 9 Ib =0.8A) ¡tf = 1.0/ie

Contextual Info: motorola sc XSTRS/R F 12E D I t3fc.7254 0035133 0 I MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA D e sig n e r ’s D ata Sheet 15 AM PERE NPN SILICON POWER TRANSISTORS SW ITCH M O D E S E R IE S NPN SILIC O N POW ER IT R A N S IS T O R S Th ese tra n sisto rs are designed for high-voltage, high-speed,

2SD1796

Abstract: FM20
Contextual Info: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor 4 A hFE mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB

2SD1796

Abstract: relay 12v 3a datasheet FM20
Contextual Info: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A

2SC5100

Abstract: 2SA1908 DSA0016511
Contextual Info: 2SC5100 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1908 hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A

2SA1908

Abstract: 2SC5100
Contextual Info: 2SC5100 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1908 hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A

2SC4466

Abstract: 2SA1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ

2SC5099

Abstract: 2SA1907 DSA0016511
Contextual Info: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz

2SC4511

Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
Contextual Info: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz

2SA1907

Abstract: 2SC5099
Contextual Info: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ

2SC4466

Abstract: 2sa1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ

2SC4511

Abstract: 2SA1725 FM20
Contextual Info: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz

Contextual Info: 7 i i v * > V i V 7 - h -7> v *$ FS series Switching Power Transistor : O u tlin e Dim ensions 2SC4833 5a ,tej": Case : ITO-220 TP5V40FS (NPN) 4.6-0! 2.7to? 0.7^02 Unit I mm A b so lu te Maximum R a tin g s m Item a ie S S f iS Storage Temperature &-£gf5;£Jg

2sc2065

Abstract: Low Distortion Amplifiers ne22 TRANSISTOR ne22 NE22100 NE22120 S21E NE221
Contextual Info: N E C / 1SE D CALIFORNIA NEC • V b 4a ?414 O D D i a a ? 4 NPN MEDIUM POWER UHF-VHF TRANSISTOR NE22100 NE22120 ABSOLUTE MAXIMUM RATINGS FEATURES SYMBOLS • ULTR A-LINEAR B R O A D -B A N D A M P L IF IE R • LO W D IS T O R T IO N A T H IG H PO W E R PERFORMANCE SPECIFICATIONS

Contextual Info: IJC - V f i r A Switching Power Transistor • W K r J Ü lS l 10a 2SC4585 NPN S 6 P I6 S O u tlin e D im ensions (TP10W80HFX) A b s o lu te Maximum R a tin g s m Item s IE !§• Svmbol iSsif'¡S.8S Storage Temperature DC Peak DC ^ Î- ^ flîV jK Base Current

2sd371

Abstract: 2SD 371 2Sb531 transistor 2sd 371 2SD371-Y 251C 2SB53 AC73 je 371 Transistor
Contextual Info: s /U -j SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR mumnm U n i t i n mm Power A m p lif ie r A p p l i c a t i o n s • : Pc = SOW : v CE0 = loov 2SB531 3 0 W H i- F i *-■?* -f * T ; / • ßfel-OMAX. r +ao9 0 LO-CXO3 I 00 fA i OTT M m & T -t* • 11 MAX

BD 677

Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
Contextual Info: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E

2SC4160

Abstract: high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz
Contextual Info: SavantIC Semiconductor Product Specification 2SC4160 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage. ·High reliability. ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/4A switching regulator applications

2SC4160

Contextual Info: Inchange Semiconductor Product Specification 2SC4160 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage. ・High reliability. ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・400V/4A switching regulator applications

TO-252-2L

Abstract: to2522l
Contextual Info: 2SD2118 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) Excellent DC current gain characteristics. TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol