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    NPN POWER DARLINGTON MODULES Search Results

    NPN POWER DARLINGTON MODULES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    NPN POWER DARLINGTON MODULES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MP6101

    Abstract: Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002
    Text: Power Modules PRODUCT GUIDE CONTENTS 1. 2. 3. 4. 5. 6. Product List Introduction to the Products and Their Features Structure and Dimensions Power Module Packages System Diagram of Power Module Products Power Module Product Matrix 7. Product Line-ups Listed by Package


    Original     		PDF MP4005~ MP4101~ MP4301~ MP6301 MP4501~ MP6901 S-10M MP4208~ S-12M MP4410~ MP6101 Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    LM358 op amp

    Abstract: BDV65A LM358 V48B28C250A Darlington NPN 250W
    Text: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or


    Original     		PDF to110% LM358 LM358 op amp BDV65A V48B28C250A Darlington NPN 250W

    BDV55A

    Abstract: LM358 op amp Lm358
    Text: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or


    Original     		PDF to110% LM358 BDV55A LM358 op amp

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor c 6073

    Abstract: PTC6072 c 6073 PTC6073 TF PTC 6073 Darlington NPN Silicon Diode "Power Diode" Darlington 40A ic c 6073
    Text: NPN Silicon Power Darlington Power Diode Module 40 Amperes • 400 Volts FEATURES • • • • • High Voltage Rating — 600 Volts Overload Short Circuit Rating Glass Passivated Die to Provide Excellent High Temperature Stability Discrete Diode Connected


    OCR Scan     		PDF I-----1-7-10% transistor c 6073 PTC6072 c 6073 PTC6073 TF PTC 6073 Darlington NPN Silicon Diode "Power Diode" Darlington 40A ic c 6073

    Darlington npn stud mount

    Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
    Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25


    OCR Scan     		PDF 7Hc14ti51i MT-52 MT-33 Darlington npn stud mount TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240

    lm 358 ic

    Abstract: LM 311 IC PTC205 PTC2051
    Text: Ser es PTC 2051, PTC 2052 NPN Silicon Power Darlington Transistors 50 Amperes • 900 Volts FEATURES • Isolated Collectors • High Voltage Rating - 900 Volts • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • High Current Switching Power Supplies


    OCR Scan     		PDF off480 lm 358 ic LM 311 IC PTC205 PTC2051

    NPN transistor Ic 50A td tr ts tf

    Abstract: transistor MJ 122 NPN Power Darlington Modules NPN Darlington transistor TF PTC Ptc transistor
    Text: Series PTC 2400, PTC 2401 NPN Silicon Power Darlington Transistors 50 Amperes • 600 Volts FEATURES • • • • Isolated Collectors High Voltage Rating - 600 Volts Overload Short Circuit Rating Glass Passivated Die to Provide Excellent High Temperature Stability


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    PTC2000

    Abstract: ptc 2000
    Text: Series PTC 2 0 0 0 PTC 2001 NPN Silicon Power Darlington Transistors 50 Amperes • 1000 Volts FEA TURES • Isolated Collectors • High Voltage Rating - 1000 Volts • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • High Current Switching Power Supplies


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    Semikron sk 100 dal

    Abstract: Semikron sk 50 dal
    Text: S1E D Ô13bb71 □□0303ti 375 SEMIKRON INC s e Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V lc ICM > 1200 V SEMITRANS 3 NPN Power Darlington Modules 150 A, 1200 V 1200 V V SK 150 DB 120 D SK 150 DAL 120 D V A tp = 1 ms 300 A 150 A II


    OCR Scan     		PDF 13bb71 0303ti Semikron sk 100 dal Semikron sk 50 dal

    transistor C 6073

    Abstract: LB219 PTC6072 ic c 6073
    Text: r 6 Î Ï 5 9 50 M I C R O S E M I C O R P / P O_ WER” 02E 0 0 460 -7 s D SÉlbiisTSD oGocmbO a |~ " -^ " PTC6072 PTC6073 TECH NOLOGY Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AM PERES 400 VOLTS


    OCR Scan     		PDF PTC6072 PTC6073 transistor C 6073 LB219 ic c 6073

    SK 50 DB 060D

    Abstract: B794 Semitrans Semikron sk 75 DB060D DDQ3617 H21E
    Text: SIE D •'sT h ■ fil3bb?l D003ölb SÔ7 « S E K Ö Sr ö h I hT SEMIKRDN - Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V Values Units V V 600 V I 600 600 SEMITRANS 3 NPN Power Darlington Modules 100 A, 600 V II o m I CM > II UJ VcBO


    OCR Scan     		PDF l3bb71 T-33-35 B7-94 SK 50 DB 060D B794 Semitrans Semikron sk 75 DB060D DDQ3617 H21E

    NPN Power Darlington Modules

    Abstract: sk30db semikron SK 300
    Text: se MIKROn Maximum Ratings VcEV Units lc = 1 A, V be = - 2 V 600 V Vbe = - 2 V 600 V 600 V SEMITRANS 2 NPN Power Darlington Modules 30 A, 600 V SK 30 DB 060 D V ebo o II ' VcBO Values o o VcEVsus Conditions m II Symbol 7 V lc D. C. 30 A tp = 1 ms 60 A D. C.


    OCR Scan     		PDF h21E2) NPN Power Darlington Modules sk30db semikron SK 300

    photon coupled interrupter 3101

    Abstract: photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046
    Text: INFRARED EMITTING DIODES NTE type Number 3017 3027 3028 3029A 3099 30001 Typical Total External Radiated Power mW Diagram Number Description PN Gallium Arsenide Bi-Directional Bi-Directional Maximum Forward Voltage (Volts) Reverse Voltage (Volts) DC Forward


    OCR Scan     		PDF 650nW 150nW b4315S^ 0003hl3 photon coupled interrupter 3101 photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046

    TRANSISTOR 2SC 950

    Abstract: phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A
    Text: INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External Radiated Power mW Maximum Forward Voltage (Volta) VF 1.28 Vr 141 Po 15 Typical Peak Emission Wove length DC Forward Current (mA) Power Dlaalpatlon (mW) 6 If 100 Pd


    OCR Scan     		PDF 650nW TRANSISTOR 2SC 950 phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A

    HA 3089

    Abstract: ic 7500 "Photo Interrupter" dual transistor 3045 PT photon coupled interrupter nte 3100 npn zero crossing triac FT DARLINGTON TRANSISTOR npn transistor photon coupled interrupter 3101 PT 1300 phototransistor
    Text: ì mm NI T E E L E C T R O N I C S NTE TYPE WX OESCNPTtON 3039 Lite/Dark Switch -v INC 1 ?E ^ HAX SUPPLY VOUAGE DIAS NO. * K : • baiasi G O O l T b ö =1 ■ V MAX OUTPUT VOLTAGE ’ (V) HAX OUTPUT CURRENT (mA) . vcc v0UT 15 15 176 . UGHT THRESHOLD LEVEL


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    Untitled

    Abstract: No abstract text available
    Text: vim ì N T E ELECTRONICS • i INC 17E • AMBISSI OOOntfl 1 ■ T-V/-S3 NTE TYPE HAS DESCRIPTION NO. NOi r! ■ 3039 rfz.:- Lite/D ark Sw itch HAX SUPPLY VOLTAGE V HAX OUTPUT . VOLTAGE ’ (V) HAX OUTPUT OUTPUT ON OUTPUT OFF Vcc v0UT •out Eon eoff Po*


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    L 3005 TRANSISTOR

    Abstract: transistor 3005 2 transistor 3005 SI 3102 v NPN 200 VOLTS POWER TRANSISTOR photon coupled interrupter nte 3100 npn PHOTO GAP DETECTOR
    Text: typical NTE Type Number Description Typical Peak Emission Wavelength nm Typical Response Time (ns) Diagram Number Total External Radiated Power (mW) Po VF Vr If Pd Xp ton, toff 550|iW 1.5 3 50 75 900 10 Maximum Forward Voltage (Volts) Reverse Voltage (Volts)


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    tt 3043 Transistor 5 pin type

    Abstract: transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC
    Text: N T E ELECTRONICS INC S5E T> bM aiSST DQQEbfl? STS « N T E T-H \-*O I D INDICATORS NTE TVI» No. Description and Application Dtag. NO. «y Per Bag Ind Pkg S ia Typical Viewing Angle Viewed ' Color Typical Maximum (Volts) Breakdown voltage (Vorta) Maximum


    OCR Scan     		PDF G0057D2 tt 3043 Transistor 5 pin type transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC

    pwm INVERTER welder

    Abstract: KD224510 250A darlington transistor Kd224515 powerex snubber capacitor inverter welder circuit kd2245 kd224510 application note KD221K75 transistor
    Text: W U IfB tE K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Application Information 2.7 Reverse Transistor Action and dv/dt Turn-on A problem that occurs with the half-bridge circuit configuration fed


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    MA1010 equivalent

    Abstract: MA2410 MA1010 SHINDENGEN MA1000 Series MTB001 ma2000 series shindengen ma2000 MA1000 Series MA1000 SHINDENGEN MA1010
    Text: P o w e r IC s Interface Power ICs [Outline] The MTA/MTB Series are monolithic power ICs designed for use as needle print head drivers in dot matrix printers, and as stepping motor drivers. [Features] 1. Inputs are TTL or CMOS compatible. 2. High ouput current lc=2A or 4A, V ce = 60V or 80V


    OCR Scan     		PDF TA001M MTB001 MTD1110 MA1000 MA1010 A2000 MA2410 MA4510 MA2000 MA1010 equivalent SHINDENGEN MA1000 Series ma2000 series shindengen MA1000 Series SHINDENGEN MA1010

    7 amps pnp transistor

    Abstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module
    Text: E C I SEMICONDUCTOR MAE D • 305fl7b7 0 0 0 0 D7 4 Oôb « E C I S -jy DESCRIPTION The ECI Semiconductor EM series has been generated to provide cost and space effective high performance analog system solutions in silicon for your specific application. The EM family of low-cost 30v Bipolar Gridded Semicustom Arrays is


    OCR Scan     		PDF 302A7L7 0D00074 302fl7b7 7 amps pnp transistor 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module

    MPM001

    Abstract: No abstract text available
    Text: MOTOROLA SC -CXSTRS/R F> fiD MOTOROLA 'pW'lS' D E > fc,3fc,7aSM 0D7t,bñt. 7 T D • Order this data sheet by MPM001/D SEMICONDUCTOR TECHNICAL DATA M PM 001 M PM 002 Advance Information Com plem entary Power Darlington M odules MULTIPLE POWER DARLINGTON MODULES


    OCR Scan     		PDF MPM001/D MPM001 MPM002 MPM001