NPN S2E Search Results

NPN S2E Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

NPN S2E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE382 Abstract: t0218 NTE377 NTE373 NTE374 RF POWER AMP NTE390 25w audio NTE378 NTE398 Contextual Info: N T E ELECTRONICS INC S2E D • bMaiSS'i QQG2bDS 1SÖ B N T E TRANSISTSRSBUPOLAR I T—33—01 Maximum Breakdown Voltage NTH TVP* Number Polarity and Material Description and Application 362 NPN-Si RF Power Amp P0 = 2W, 4 0 7 -5 1 2MHZ 363 NPN-Si RF Power Amp	OCR Scan	000ab05 T-33-01 407-512MHZ) 085ns 387MP NTE387 NTE68) NTE382 t0218 NTE377 NTE373 NTE374 RF POWER AMP NTE390 25w audio NTE378 NTE398	PDF
sj 2038 Abstract: ic sj 2038 scr gate drivers ic ec sanyo 2SD1628 p10j T35 ET sanyo sdk marking sdk Contextual Info: SANYO SEMI CONDUCTOR 2SD1628 CORP ESE D 7 ^ 7 0 7 ^ 00G7S4L, T - 3 5 4 -15 % 2038 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications •X1731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor	OCR Scan	ci707b 000724b 2SD1628 250mm2 sj 2038 ic sj 2038 scr gate drivers ic ec sanyo p10j T35 ET sanyo sdk marking sdk	PDF
Contextual Info: SIEMENS • Ö235b05 D0TDflb3 OTfl PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN Type Marking Ordering Code (tape and reel)	OCR Scan	235b05 Q68000-A6479 Q68000-A6483 OT-23 EHP00878	PDF
s2e sot-23 Abstract: NPN S2D NPN S2e S2E MARKING IC 74 Q68000-A6479 Q68000-A6483 93 MARKING CODE marking code 93 Contextual Info: PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 42, SMBTA 43 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)	Original	Q68000-A6479 Q68000-A6483 OT-23 s2e sot-23 NPN S2D NPN S2e S2E MARKING IC 74 Q68000-A6479 Q68000-A6483 93 MARKING CODE marking code 93	PDF
2n2222 to92 Abstract: PN2218 2N4970 Contextual Info: NATL SEtlICOND DISCRETE S2E D • NPN General Purpose Transistors by Ascending Part Type V c e o (V ) V c b o (V ) Min Min Min Max (mA/V) 180 110 500 500 500 800 500 500 400 600 400 200 100 200 600 600 2/4.5 2/4.5 2/4.5 2/4.5 2/4.5 2/4.5 10/10 2/10 2/10	OCR Scan	bSD1130 0D3777E T-21-0! MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 2n2222 to92 PN2218 2N4970	PDF
2SA1344 Abstract: H7q7 2sc339 2SC3398 s2e transistor Contextual Info: SANYO SEMICONDUCTOR CORP 5SE D0Q73SÔ D 2SA1344. 2SC3398 b • T - 3 7 - 13 T - 3S-I\ PNP/NPN Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances Rl=10ki2, R2=10kil 1236C Application! • Switching circuit, inverter circuit, interface circuit, driver circuit.	OCR Scan	2SA1344, 2SC3398 D0Q73SÃ T-37- T-35-H 1236C 10ki2, 10kfi, 10kii) 2SA1344 2SA1344 H7q7 2sc339 2SC3398 s2e transistor	PDF
marking code 93 Abstract: Q68000-A6479 Q68000-A6483 93 MARKING S2E MARKING MARKING 93 SMBTA43 NPN S2e s2e sot-23 Contextual Info: PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 42, SMBTA 43 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)	Original	Q68000-A6479 Q68000-A6483 OT-23 marking code 93 Q68000-A6479 Q68000-A6483 93 MARKING S2E MARKING MARKING 93 SMBTA43 NPN S2e s2e sot-23	PDF
bta 92 Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05 Contextual Info: SIEMENS PNP Silicon Transistors for High Voltages SM BTA 92 SM BTA 93 • High breakdown voltage • Low coflector-emitter saturation voltage • Complementary types: S M B TA 42, SM BTA 43 NPN Type Marking Ordering Code (tape and reel) Pin (Contigui ation	OCR Scan	Q68000-A6479 Q68000-A6483 OT-23 EHP0088J bta 92 BTA43 smbta93 93 MARKING CODE NPN S2e bta 05	PDF
Contextual Info: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation	OCR Scan	i707b 2SC4401 2SC4401-applied	PDF
SiEMENS PM 350 92 Contextual Info: BSE D • 023b32Q 0 0 1 7 2 ^ 2 PNP Silicon Transistors for High Voltages S IE M E N S / SPCL-. 1 WtZIP SMBTA92 SEMICONDS_ SMBTA93 • High breakdown voltage • Low collector-emltter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN	OCR Scan	023b32Q SMBTA92 SMBTA93 Q68000-A4338 Q68000-A4339 Q68000-A6479 Q68000-A6483 QQ17S^ SiEMENS PM 350 92	PDF
2SC4003 Abstract: bau 95 Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity	OCR Scan	7cH707b 2SC4003 2SC4003 bau 95	PDF
pa 2030a Abstract: 2SC4520 QGQ711G K 2038 Contextual Info: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage	OCR Scan	n707fe, QGQ711G 2SC4520 250mm2 pa 2030a K 2038	PDF
2sd209 Contextual Info: SANYO SEMICONDUCTOR 2SB1394, 2SD2099 CORP SSE D • 7 cH 7 0 7 f c i 00072S3 3 T -3 3 -/7 - r 3 3 -0 5 % PNP/NPN Epitaxial Planar Silicon Transistors 2038 Compact Motor Driver Applications 3174 Features • Contains input resistance Ri , base-to-emitter resistance(RBE)	OCR Scan	00072S3 2SB1394, 2SD2099 2SB1394 2sd209	PDF
2SC3773 Abstract: SANYO SS 1001 Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band	OCR Scan	n707b 2SC3773 1946B 2SC3773 SANYO SS 1001	PDF

Contextual Info: SANYO SEMICONDUCTOR CORP 55E 7cìeì707b O O O b á ñ 11 a D T - 31-15 2SC4407 NPN Epitaxial Planar Silico n Transistor 2059 VHF/UHF MIX, OSC Applications 2760 Applications • V H F/U H F m ixers, frequency converters, local oscillators Features f r = 3.0GHz typ	OCR Scan	2SC4407 2SC4407-applied	PDF
Contextual Info: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl)	OCR Scan	FC106 T-35-21 47kfl) FC106 2SC3395, 4139MO	PDF
2sd1805a Abstract: 2SD1805 Contextual Info: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers	OCR Scan	7T707tu 2SD1805 T-33-07 2SD1805-applied 2sd1805a	PDF
693F TRANSISTOR Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.	OCR Scan	320MHz 693F TRANSISTOR 693F N20J transistor 693f 2SC2814 2SC28H II04A	PDF
IC TA 31101 Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor Contextual Info: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the	OCR Scan	00Q7M40 FC102 FC102 2SC4211, IC TA 31101 pa 2030a equivalent pa 2030a ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor	PDF
transistor kd 2059 Abstract: pa 2030a kd 2059 SANYO SS 1001 2SC4523 MARKING 2S SMA Contextual Info: SANYO S E M I C O N D U C T O R CORP 55E D 7^707^ OD0.71 1 1 ö r-3S~n 2SC4523 ♦ NPN Epitaxial Planar Silicon Transistor 2044 • High-Speed Switching Applications 3142 F e a tu re s . Adoption o f F B E T , M BIT processes • Large current capacity •Low collector-to-emitter saturation voltage	OCR Scan	2SC4523 T-35-11 transistor kd 2059 pa 2030a kd 2059 SANYO SS 1001 MARKING 2S SMA	PDF
SANYO marking kf Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo Contextual Info: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band	OCR Scan		PDF
NPN S2e Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp Contextual Info: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum	OCR Scan	T0220 T0202 T0202 NTE263) 281MCP NPN S2e Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp	PDF
transistor SMD s72 Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той	Original	OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p	PDF
NTE130 Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192 Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector	OCR Scan	T-33-01 NTE192A) T092HS 27MHZ, 226MP NTE226 T0237 45MHZ NTE199) 50MHZ) NTE130 NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192	PDF

NPN S2E Search Results

NPN S2E Result Highlights (5)

NPN S2E Datasheets Context Search

NTE382

sj 2038

s2e sot-23

2n2222 to92

2SA1344

marking code 93

bta 92

SiEMENS PM 350 92

2SC4003

pa 2030a

2sd209

2SC3773

2sd1805a

693F TRANSISTOR

IC TA 31101

transistor kd 2059

SANYO marking kf

NPN S2e

transistor SMD s72

NTE130