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Leviton Manufacturing Co MXT09-2HB MINI METER MMU 9 X 200A XL HD+DAS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	MXT09-2HB	Bulk		6 Weeks	1	1 $7243.2 10 $7243.2 100 $7243.2 1000 $7243.2 10000 $7243.2	Get Quote
Leviton Manufacturing Co MXT09-2H0 MINI METER MMU 9 X 200A XL HDPM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	MXT09-2H0	Bulk		6 Weeks	1	1 $6773.1 10 $6773.1 100 $6773.1 1000 $6773.1 10000 $6773.1	Get Quote

T092H Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ECG189 Abstract: ECG181 ECG162 ECG164 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG172A ECG188 Contextual Info: Transistors cont'd E C G Type D escrip tio n and A pplicatio n (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To B a se V o lts Collector To Em itter V olts B a se to Em itter V o lts b v CBO b v CEO bvebo M ax. D e v ice D iss. P p W atts	OCR Scan	ECG162 ECG163A ECG164 ECG165 ECG171 BC6296) O-202 ECG172A O-92HS ECG192A ECG189 ECG181 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG188	PDF
NTE130 Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192 Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector	OCR Scan	T-33-01 NTE192A) T092HS 27MHZ, 226MP NTE226 T0237 45MHZ NTE199) 50MHZ) NTE130 NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
nte183 Contextual Info: Maximum Breakdown Voltage Maximum Collector Current Amps Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHZ) NTE Type Number Polarity	OCR Scan	O202N NTE240) T092HS NTE193A) NTE192) nte183	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
Nte187 Abstract: NTE38 nte193a Contextual Info: BI-POL AR TRANSISTORS Maximum Collector Current Amps Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) NTE Type Number Polarity and	OCR Scan	T0202 NTE193A) T092HS NTE192A) Nte187 NTE38 nte193a	PDF