NPN TRANSISTOR 10A 100V Search Results

Contextual Info: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Vce-200V 20a

Abstract: 200V transistor npn 10a 300V transistor npn 2a BUV22 equivalent BUV22
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power

transistor 2n3772

Abstract: 2N3772
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and

2SD1793

Abstract: ITO-220 TP10L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1793

Abstract: ITO-220 TP10L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1793

Abstract: ITO-220 TP10L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

TRANSISTOR TC 100

Abstract: BUV50 transistor TC 10 TP30S
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV50 DESCRIPTION •High Current Capability ·Low Collector Saturation Voltage: VCE sat = 0.8V (Max.) @IC= 10A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power

transistor BD245

Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C

NPN Transistor 10A 100V

Abstract: darlington power transistor npn DARLINGTON 10A MJ11017 MJ11018 NPN transistor Ic 50A td tr ts tf npn darlington 150v 15a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A

npn DARLINGTON 10A

Abstract: darlington power transistor 10a darlington power transistor MJ11022
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A

BDX67

Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier

ZXTN2011Z

Contextual Info: A Product Line of Diodes Incorporated ZXTN2011Z Green 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 100V IC = 4.5A high Continuous Current ICM = 10A Peak Pulse Current

Contextual Info: ,O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJH11018 Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE = 400(Min)@lc=10A • Collector-Emitter Sustaining Voltage-

Contextual Info: J.£.ii£,u , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BDY76 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • High DC Current Gain:hFE=40~120@lc = 10A

NTE72

Contextual Info: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ✪ ISSUE 3 - NOVEMBER 1995 0. 4 0. 3 t 0. 2 a t) -55 ° C +25 ° C +100 ° C SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V 0. 1 10m A 10 0m A 1A 10A 10m A 1m A V+-=10V

SILICON TRANSISTOR CORP

Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V

BDW42

Abstract: BDW47 147 B transistor npn DARLINGTON 10A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A

npn DARLINGTON 10A

Abstract: TIP147T NPN Darlington Transistor TIP142T darlington power transistor 10a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T APPLICATIONS

BDT93

Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96

12V 5A rectifier

Contextual Info: PH26560 Series Preliminary POWER HYBRID 15A DUAL 1/2 H-BRIDGE DRIVERS DESCRIPTION FEATURES • 15A Drive Capability • 4 Drivers with Catch Rectifiers • Fast Switching Speeds ton =35nsec @lc =5A, Vcc =30V toff =300nsec @lc =5A, Vcc =30V • 100V Breakdown on

2SB1231

Abstract: 2SD1841
Contextual Info: O rdering num ber: EN3260A SMÊYO % No 326ÖA i 2SB1231/2SD1841 2SB1231: PNP Epitaxial Planar Silicon Transistor 2SD1841: NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications Features • Large current capacity and wide ASO. • Low saturation voltage.

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

2N6546

Abstract: 2N6547
Contextual Info: DATA SHEET 2N6546 2N6547 NPN SILICON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6546, 2N6547 types are Silicon NPN Triple Diffused Mesa Transistors designed for high voltage, high current, high speed switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted