NPN TRANSISTOR 10A 70V Search Results

NPN TRANSISTOR 10A 70V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN TRANSISTOR 10A 70V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor BD245 Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C	Original	BD245/A/B/C BD245; BD245A BD245B; BD245C BD246/A/B/C BD245 BD245B transistor BD245 BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V	PDF
MJE3055T Contextual Info: SILICON P LASTIC POWER TRANSISTOR NPN MJE3055T 10A 75W Technical Data …designed for general-purpose switching and amplifier application. F F F F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc	Original	MJE3055T O-220 500kHz MJE3055T	PDF
MJE3055 Abstract: MJE3055T Contextual Info: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	MJE3055T O-220 MJE3055 MJE3055T	PDF
MJE3055TTU Contextual Info: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	MJE3055T O-220 MJE3055TTU O-220	PDF
mje3055t Contextual Info: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	MJE3055T O-220 mje3055t	PDF
KSE3055T Contextual Info: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	KSE3055T O-220 KSE3055T KSE3055TTU	PDF
Contextual Info: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	KSE3055T O-220	PDF
KSE3055T Contextual Info: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	KSE3055T O-220 KSE3055T	PDF
"dual TRANSISTORs" pnp npn Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034 Contextual Info: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,	Original	ZXTDE4M832 "dual TRANSISTORs" pnp npn dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034	PDF
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A	Original	ZXTC6720MC ZXTDE4M832	PDF
Contextual Info: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A	Original	ZXTC6720MC ZXTDE4M832	PDF
KSH3055TF Contextual Info: KSH3055 KSH3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular KSE3055T	Original	KSH3055 KSE3055T 500mA KSE3055 500mA KSH3055ITU O-251 KSH3055TF	PDF
KSE3055 Abstract: KSH3055 Contextual Info: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular KSE3055	Original	KSH3055 KSE3055 500mA 500KHz KSE3055 KSH3055	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free	Original	MJE3055T MJE3055T MJE3055TL-TA3-T MJE3055TG-TA3-T MJE3055TL-TM3-T MJE3055TG-TM3-T MJE3055TL-TN3-R MJE3055TG-TN3-R O-220 O-251	PDF

transistor power Abstract: NPN Transistor 10A 70V dpak code marking JC diode NPN Silicon Power Transistor DPAK CJD3055 npn power transistor ic 400ma marking 33a on semiconductor power transistors NPN, PNP for 500ma, 30v Contextual Info: Central CJD2955 NPN CJD3055 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount	Original	CJD2955 CJD3055 CJD2955, 400mA 500mA, 26-September transistor power NPN Transistor 10A 70V dpak code marking JC diode NPN Silicon Power Transistor DPAK npn power transistor ic 400ma marking 33a on semiconductor power transistors NPN, PNP for 500ma, 30v	PDF
CJD3055 Contextual Info: Central" CJD2955 NPN CJD3055 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount pack	OCR Scan	CJD2955 CJD3055 CJD2955, 26-September	PDF
MJE3055 Abstract: KSH3055 Q02S transistor MJE3055 MJE3055 TO-225 Contextual Info: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I.PACK, I ” Suffix) • Electrically Similar to Popular MJE3055	OCR Scan	KSH3055 MJE3055 500mA 500mA 500KHz Q02S572 7tb4142 MJE3055 Q02S transistor MJE3055 MJE3055 TO-225	PDF
Contextual Info: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I" Suffix) • Electrically Similar to Popular KSE3055	OCR Scan	KSH3055 KSE3055 500mA 500mA 500KHZ	PDF
MJE3055 Abstract: transistor MJE3055 mje3055 transistor MJE3055 TO-225 Contextual Info: MJE3055 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 1 Features 2 3 GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage	Original	MJE3055 O-220 O-220 200mA, tp300S, transistor MJE3055 mje3055 transistor MJE3055 TO-225	PDF
Contextual Info: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK Lead Formed for Surface Mount Applications No Suffix Straight Lead (I.PACK, I ’ Suffix)	OCR Scan	KSH3055 KSE3055 500mA 500mA 500KHz 300fiS,	PDF
transistor MJE3055 Abstract: MJE3055 MJD3055 1As transistor Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJD3055 GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix)	OCR Scan	MJD3055 MJE3055 500mA 500kHz 300ns, transistor MJE3055 MJE3055 MJD3055 1As transistor	PDF
2SC2489 Abstract: 2SA1065 hfe1 2SC248 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION •Good Linearity of hFE ·Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065 APPLICATIONS	Original	2SC2489 2SA1065 2SC2489 2SA1065 hfe1 2SC248	PDF
transistor MJE3055 Abstract: MJE3055 Contextual Info: MJD3055 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. TO-252-2L DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	O-251/TO-252-2L MJD3055 O-251 MJE3055. O-252-2L 500KHZ transistor MJE3055 MJE3055	PDF
2NXXXX Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE \|fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389	OCR Scan	88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package	PDF

NPN TRANSISTOR 10A 70V Search Results

NPN TRANSISTOR 10A 70V Result Highlights (5)

NPN TRANSISTOR 10A 70V Datasheets Context Search

transistor BD245

MJE3055T

MJE3055

MJE3055TTU

mje3055t

KSE3055T

KSE3055T

"dual TRANSISTORs" pnp npn

KSH3055TF

KSE3055

transistor power

CJD3055

MJE3055

MJE3055

transistor MJE3055

2SC2489

transistor MJE3055

2NXXXX