NPN TRANSISTOR 400 VOLTS.10 AMPERES Search Results

NPN TRANSISTOR 400 VOLTS.10 AMPERES Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NPN TRANSISTOR 400 VOLTS.10 AMPERES Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mj150* darlington Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35	Original	PDF	2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
MJD122T4G Abstract: TRANSISTOR MJD122 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122
Untitled Abstract: No abstract text available Text: MJW21193 PNP MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features 16 AMPERES	Original	PDF	MJW21193 MJW21194 MJW21193 MJW21194 MJW21193/D
PNP Transistor DPAK Abstract: No abstract text available Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS	Original	PDF	MJD200 MJD210 PNP Transistor DPAK
100 amp npn darlington power transistors Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D 100 amp npn darlington power transistors MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120
tip120tip122 Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D tip120tip122 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
MJD127T4 Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4 npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
MJD127T4G Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS	Original	PDF	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
CHT5113PGP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CHT5113PGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts CURRENT 6 Amperes APPLICATION * High current amplifier. FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.55V(Max.)(IC/IB=6A/0.3A) .050 (1.27)	Original	PDF	CHT5113PGP -100mA; CHT5113PGP
data base dpak Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CHT5113PPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts CURRENT 6 Amperes APPLICATION * High current amplifier. FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.55V(Max.)(IC/IB=6A/0.3A) .050 (1.27)	Original	PDF	CHT5113PPT -100mA; data base dpak
Untitled Abstract: No abstract text available Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTOR 8 AMPERES	Original	PDF	MJD122, NJVMJD122T4G MJD127 2N6040â 2N6045 TIP120â TIP122 TIP125â TIP127 MJD122/D
MJD122 Abstract: TIP125-TIP127 mjd122g Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES	Original	PDF	MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g
Untitled Abstract: No abstract text available Text: MJE200G NPN , MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200Gâ MJE210Gâ MJE200/D
Untitled Abstract: No abstract text available Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D

D60T1520 Abstract: D60T152010 D62T D62T1520 D62T152010 Scans-0014004 powerex to-200 Text: ’POWEREX INC 7294621 POWEREX Tfl INC 98D f ^ W V E flE A DE \|? ET 4 b a i DDOEbTl 7 02691 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 D D60T1520 D62T1520 Tentative NPN Power Switching Transistors 200 Amperes 150 Volts Features:	OCR Scan	PDF	D60T1520 D62T1520 D62T1520 Amperes/150 D60T/D62T1520 060T/D62T1520 D60T1520 D60T152010 D62T D62T152010 Scans-0014004 powerex to-200
2N6488 MOTOROLA Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —	OCR Scan	PDF	2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20
ptc temperature sensor pt 300 Abstract: 1T18 Text: "fil 1 5 9 5 0 MICROS E M I C O R P / P O W E R OS DE I — 02E 00468 D bllSTSO OQGDHbfl 7 - T ~ ‘ 3 3 ' ' L e? 1~ PTC 10022 PTC 10023 Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 40 AMPERES 400 VOLTS 0J 61j 4,O9] 0.151 3.B4 UIA'	OCR Scan	PDF	0205DERATING ptc temperature sensor pt 300 1T18
D60T2575 Abstract: D60T2590 1S697 D60T307510 D62T D62T307510 FC75A Text: POlüEREX INC Tfl DE j T S ' m a i QOQSbb? 0 ^ M \|j r \|l J F y IM . » D60T/D62T D60T/D62T Powerex, Inc., Hillls S treet, Youngwoad, Pennsylvania 1S697 412 925-7272 ~ j - 33^15" _ 75 _ 90 NPN Power Switching Transistors 75-90 Amperes 250-500 Volts	OCR Scan	PDF	T-33-15 D60T/D62T_ Amperes/250-500 D60T/D 00DSb74 D60T2575 D60T2590 1S697 D60T307510 D62T D62T307510 FC75A
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON POW ER TRANSISTORS 60 WATTS	OCR Scan	PDF	O-220AB BU406 BU407
transistor 3405 motorola Abstract: bux48a equivalent bux48 equivalent transistor 3405 npn Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed (or high-voltage, high-speed,	OCR Scan	PDF	BUX48/BUX48A BUX48 BUX48A wit16 transistor 3405 motorola bux48a equivalent bux48 equivalent transistor 3405 npn
Transistor PJ 431 Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB Text: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 \| Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue	OCR Scan	PDF
TL 413 Abstract: Tj33 ptc420 Text: 6115950 MICROSEMI CORP/POWER D T-J33 ->3 71C 0 0 3 1 8 f DE^IbllSTSD 0000310 0 Series PTC 413, PTC 420 High Voltage NPN Transistors 3.5 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue	OCR Scan	PDF	T-J33 TL 413 Tj33 ptc420
D7ST4013 Abstract: amperes D7ST4010 D7ST401310 D7ST4015 D7ST4510 D7ST4515 D7ST5010 130Amp IB215 Text: Tfl DE j V E T - l b e i DOÜdbüS w a r _^ • Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 1 t - m NPN Power Switching Transistors 100-200 Amperes 400-500 Volts Features: □ Triple Diffused Design □ Compression Bonded Construction	OCR Scan	PDF	00UdbÃ T-33-15 10msec 100msec D7ST4013 amperes D7ST4010 D7ST401310 D7ST4015 D7ST4510 D7ST4515 D7ST5010 130Amp IB215
Untitled Abstract: No abstract text available Text: 6115950 MICROSEMI CORP/POWER 71C 00314 D *7" ’• j r j f '/ C j 7ll^\|bllSTS0 0DD0314 ' E Series PTC 403, PTC 409 High Voltage NPN Transistors 3.5 Amperes • 400 Volts FEATURES • High Voltage Rating - 4 0 0 Volts • Industrial and Military Applications	OCR Scan	PDF	0DD0314

NPN TRANSISTOR 400 VOLTS.10 AMPERES Search Results

NPN TRANSISTOR 400 VOLTS.10 AMPERES Result Highlights (5)

NPN TRANSISTOR 400 VOLTS.10 AMPERES Datasheets Context Search

mj150* darlington

MJD122T4G

Untitled

PNP Transistor DPAK

100 amp npn darlington power transistors

tip120tip122

MJD127T4

MJD127T4G

CHT5113PGP

data base dpak

Untitled

MJD122

Untitled

Untitled

D60T1520

2N6488 MOTOROLA

ptc temperature sensor pt 300

D60T2575

Untitled

transistor 3405 motorola

Transistor PJ 431

TL 413

D7ST4013

Untitled