NPN TRANSISTOR 450V 10MA Search Results

20MH

Abstract: FMMT459 FMMT459TA FMMT459TC
Contextual Info: FMMT459 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR SUMMARY VCEO=450V; VCE sat = 100mV; IC= 150mA DESCRIPTION This new high voltage tranistor provides users with very effiecient performance combining low VCE (sat) and Hfe to give extremely low on state

NTE397

Abstract: transistor NTE396 NTE396
Contextual Info: NTE396 Silicon NPN Transistor Power Amplifier & High Speed Switch Compl to NTE397 Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V

ZXTN08400BFF

Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
Contextual Info: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high

TRANSISTOR MARKING 1d5

Contextual Info: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high

Contextual Info: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

Transistor A14

Contextual Info: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type

Contextual Info: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type

NPN Transistor 450v 1A To-92

Contextual Info: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

2SC5351

Contextual Info: TO SH IBA 2SC5351 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5351 HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY • • High Voltage : V ç;e o = 450V TTicrVi Snpprl tj, = o.-S^s Max. , tf*= 0.3/^s (Max.) (Iq = 0.8A) MAXIMUM RATINGS (Ta = 25°C)

2SC5351

Contextual Info: TOSHIBA 2SC5351 2SC5351 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH SPEED SW ITCHING APPLICATIONS FOR BATTERY CHARGER 8.0 ± 0.2 A N D POWER SUPPLY • • High Voltage : V ; = 450V High Speed : tr = 0.5/¿s Max. , tf=0.3/¿s (Max.) (Iç; = 0.8A)

2SC5351

Abstract: toshiba a100
Contextual Info: TO SH IBA 2SC5351 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5351 Unit in mm HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY • • 8.0 ±0.2 High Voltage : V ç;e o = 450V TTicrVi Snpprl tj, = o.-S^s Max. , tf*= 0.3/^s (Max.) (Iq = 0.8A)

Contextual Info: 2SC5351 TOSHIBA TO SH IBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE <;r >5 3 R1 HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER A N D POW ER SUPPLY t • High Voltage : V ç e O~450V High Speed : tr = 0.5/¿s Max. , tf= 0.3//s (Max.) (Iç = 0.8A)

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R • High Voltage • Hermetic Ceramic Surface Mount Package. • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. •

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R • High Voltage • Hermetic Ceramic Surface Mount Package. • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. •

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C • High Voltage • Hermetic Ceramic Surface Mount Package. • Variant B to MIL-PRF-19500/368 outline • Ideally suited for drivers in high-voltage low current

NTE225

Contextual Info: NTE225 Silicon NPN Transistor Linear Amplifier and High Speed Switch Description: The NTE225 is a silicon NPN transistor in a TO39 type package with flange designed for industrial and commercial equipment. Typical applications include high voltage differential and operational amplifiers, high voltage inverters, and high voltage, low current switching and series regulators.

LCC3 weight

Abstract: 2N3439 2N3439CSM4
Contextual Info: SEME 2N3439CSM4 LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 1.40 ± 0.15

NPN Transistor 450v 10mA

Contextual Info: Illl w . Illl 2N3439CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

2N3439

Abstract: 2N3439DCSM 2N3440 2N3440DCSM
Contextual Info: 2N3439DCSM 2N3440DCSM SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 0.23 rad. (0.009) • DUAL SILICON PLANAR EPITAXIAL NPN

Contextual Info: IMI = l t = «= = ìvx = 2N3439DCSM 2N3440DCSM 5 E IVI E LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2 .29 ± 0.20

voltage regulators 300v dc

Abstract: LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w
Contextual Info: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 0.89

2N3439

Abstract: 2N3439DCSM 2N3440 2N3440DCSM 2N3440d
Contextual Info: 2N3439DCSM 2N3440DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad.

LCC3 weight

Abstract: TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4
Contextual Info: 2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13

Contextual Info: 2N3439DCSM 2N3440DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad.