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    NPN TRANSISTOR CHARACTERISTICS BD139 Search Results

    NPN TRANSISTOR CHARACTERISTICS BD139 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR CHARACTERISTICS BD139 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power transistor bd139

    Abstract: BD139 transistor power transistor bd135 TRANSISTOR BD139 BD135 TRANSISTOR NPN BD139 power transistor bd137 transistor bd137 BD139 BD137
    Contextual Info: BD135/137/139 BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 1.5 A Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃


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    BD135/137/139 BD135/BD137/BD139 O-126 BD135 BD137 BD139 power transistor bd139 BD139 transistor power transistor bd135 TRANSISTOR BD139 BD135 TRANSISTOR NPN BD139 power transistor bd137 transistor bd137 BD139 BD137 PDF

    BD139G

    Abstract: BD139L BD139 NPN TRANSISTOR NPN BD139 power transistor bd139 BD139 BD139 NPN transistor MAX15A BD139 N TRANSISTOR BD139
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS „ FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126 Lead-free: BD139L Halogen-free: BD139G „ ORDERING INFORMATION Normal BD139-T60-K BD139-TM3-T


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    BD139 O-251 O-126 BD139L BD139G BD139-T60-K BD139-TM3-T BD139L-T60-K BD139L-TM3-T BD139G-T60-K BD139G BD139L BD139 NPN TRANSISTOR NPN BD139 power transistor bd139 BD139 BD139 NPN transistor MAX15A BD139 N TRANSISTOR BD139 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD139L-xx-T60-K BD139G-xx-T60-K


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    BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD139L-xx-T60-K BD139G-xx-T60-K


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    BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T PDF

    BD139 application

    Abstract: BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn
    Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS


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    BD139 O-251 QW-R213-010 BD139 application BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn PDF

    Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS


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    BD139 O-126 BD139-10 BD139-16 150mA 500mA 150mA, 100MHz QW-R204-007 PDF

    Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS


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    BD139 O-251 150mA 500mA 150mA, 100MHz QW-R213-010 PDF

    bd139 application note

    Abstract: BD139 NPN BD139 application
    Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS


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    BD139 O-126 Tmb70 QW-R204-007 bd139 application note BD139 NPN BD139 application PDF

    transistor BD 139

    Abstract: transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135 BD135
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary o r quasi com plementary circuits. • • DC Current Gain — hpE = 40 Min @ l c = 0.15 Adc


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    BD135 BD137 BD139 transistor BD 139 transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135 PDF

    bd139

    Abstract: bd137 bd135 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor
    Contextual Info: BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER


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    BD135 BD137 BD139 BD135, BD137, O-126 Tmb70 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor PDF

    transistor bd137

    Abstract: BD139 BD139 NPN power transistor bd135 power transistor bd137 BD135 NPN transistor BD139 NPN transistor power transistor bd139 BD139 TRANSISTOR to-126 transistor
    Contextual Info: BD135/BD137/BD139 NPN TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 3.200 2. COLLECTOR 10.60 0 11.00 0 0.000 0.300 3. BASE 2.100 2.300 3 2 Features 1.170 1.370 1 — High Current(1.5A) — Low Voltage(80V) 15.30 0


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    BD135/BD137/BD139 O-126 O-126 BD135 BD137 BD139 transistor bd137 BD139 NPN power transistor bd135 power transistor bd137 BD135 NPN transistor BD139 NPN transistor power transistor bd139 BD139 TRANSISTOR to-126 transistor PDF

    BD139

    Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD135 BD140 npn TRANSISTOR NPN BD140 of ic BD140
    Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


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    BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD140 npn TRANSISTOR NPN BD140 of ic BD140 PDF

    BD135

    Abstract: power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135
    Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135


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    BD135/137/139 O-126 BD136, BD138 BD140 BD135 BD137 BD139 BD135 power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135 PDF

    BDI35

    Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139
    Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc


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    BD135/D BD135 BD137 BD139 O-225AA BDI35 BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139 PDF

    BD139

    Abstract: power transistor bd135 BD136 bd139 Complement BD135
    Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : BD135 : BD137 : BD139 C o lle cto r E m itter Voltage: BD135


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    BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 power transistor bd135 BD136 bd139 Complement BD135 PDF

    BD135

    Abstract: BD135 BD137 BD139
    Contextual Info: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1


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    BD135 BD137 BD139 O-126 BD136, BD138 BD140 BD135-6 BD135-10 BD135-16 BD135 BD137 BD139 PDF

    BD135 CURVES

    Abstract: BD140 application circuits circuits BD139 BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140
    Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


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    BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD135 CURVES BD140 application circuits circuits BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140 PDF

    BD139

    Abstract: BD139-10 bd140-10
    Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


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    BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10 PDF

    BD139 N

    Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
    Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135


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    BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 BD139 N TRANSISTOR TC 137 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139 PDF

    BD139

    Abstract: BD137 philips power transistor bd139 BD135-BD137-BD139 BD139 philips BD139 PIN DATA BD137-10 BD135-10 BD139 circuits BD135-16
    Contextual Info: Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base DESCRIPTION APPLICATIONS


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    BD135; BD137; BD139 O-126; BD136, BD138 BD140. BD135 BD137 BD139 philips power transistor bd139 BD135-BD137-BD139 BD139 philips BD139 PIN DATA BD137-10 BD135-10 BD139 circuits BD135-16 PDF

    power transistor bd139

    Abstract: BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 BD139 power transistor bd135 BD139 NPN transistor download datasheet
    Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


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    BD135 BD137 BD139 O-126 BD135, BD137, BD139 CHARACTERISTI10 power transistor bd139 BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 power transistor bd135 BD139 NPN transistor download datasheet PDF

    Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


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    BD135 BD137 BD139 O-126 BD135, BD137, BD139 BD135-10 PDF

    transistor BD139 N

    Abstract: power transistor bd139 BD139 amplifier BD139 BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10
    Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


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    BD135 BD137 BD139 O-126 BD135, BD137, BD139 Tmb70 transistor BD139 N power transistor bd139 BD139 amplifier BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10 PDF

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


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    O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS PDF