NPN TRANSISTOR GAIN 20 CURRENT 200MA Search Results

2N3055A

Abstract: Vce(sat) MJ2955A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A

2N3055 power amplifier circuit

Abstract: 2N3055 isc 2n3055 transistor transistor 2N3055 Power Transistor 2N3055 2N3055 specification 2N3055 transistor equivalent 2N3055 NPN Transistor 2N3055 transistor 2N3055 power circuit
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955

2N3055H

Abstract: Vce(sat) transistor Ic 4A NPN transistor 2N3055H
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055H DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier

transistor tl 430 c

Contextual Info: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY55 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage:VCE(sa,)=1.1 V(Max)@l c = 4A

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY56 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage: VCE<sat)= 1.1 V(Max)@ lc = 4A

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 BDY47 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 350V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ lc = 15A

transistor MJE3055T

Abstract: transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 60V(Min) ·High DC Current Gain: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching

BDY73

Contextual Info: J.E11EU LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDY73 DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE=50-150@lc = 4A • Collector-Emitter Saturation Voltage: VCE(sa.)= 11 V(Max)@ lc = 4A

nte278

Contextual Info: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:

nte278

Contextual Info: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:

J5200

Abstract: 2sc5200 amplifier J5200-R 2SC5200 FJP5200RTU FJP5200OTU 2Sc5200 TRANSISTOR FJP1943 FJP5200 FJPF5200
Contextual Info: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 15A. High Power Dissipation : 80watts. High Frequency : 30MHz.

2sc5200 amplifier

Abstract: J5200 2sc5200 amplifier circuit 2SC5200 TRANSISTOR FJP5200RTU spice model 2SC5200 J5200-R 2sc5200 amplifiers audio output TRANSISTOR NPN DATA SHEET TRANSISTOR 2SC5200
Contextual Info: FJP5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • 1 High Current Capability: IC = 17A. High Power Dissipation : 80watts. High Frequency : 30MHz.

j4315

Contextual Info: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.

j4313-o

Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A High Power Dissipation : 130watts High Frequency : 30MHz.

tip29 equivalent

Abstract: tip30c TIP29 TIP29A TIP29C TIP30A 9016 pnp transistor Power Bipolar Transistor
Contextual Info: TIP29, 30 High Power Bipolar Transistor Features: • Collector-Emitter sustaining voltageVCEO sus = 60V (Minimum) - TIP29A, TIP30A = 100V (Minimum) - TIP29C, TIP30C. • Collector-Emitter saturation voltageVCE(sat) = 0.7V (Maximum) at IC = 1.0A. • Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 200mA.

2sc5200 Spice Models

Abstract: j5200 2sc5200 J5200-R
Contextual Info: FJPF5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 50watts. High Frequency : 30MHz.

Contextual Info: FJPF5200 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation :50watts. High Frequency : 30MHz.

j4315

Abstract: C5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 J4315O 2sc5200 Spice Models 2sc5200 spice 2sc5200 2sc5200 transistor 2sc5200 amplifier
Contextual Info: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz.

j4315

Abstract: c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers
Contextual Info: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.

2sc5200 amplifier

Abstract: 2sc5200 amplifier circuit J5200 fjA4313 2SC5200 fjpf5200 2sc5200 amplifiers FJP5200 FJPF1943 FJPF5200OTU
Contextual Info: FJPF5200 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 50watts. High Frequency : 30MHz.

j4313-o

Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

J201 N-channel JFET to 90

Abstract: diode ZENER A8 npn no switch spice bare die zener dual gate n-channel mosfet transistor N-Channel JFET switch
Contextual Info: SST823 SST824 HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems FEATURES HIGH SWITCHING SPEED tON = 2.0ns LOW ON RESISTANCE rDS ON = 5Ω LOW GATE NODE CAPACITANCE C = 25pF LOW GATE LEAKAGE CAPACITANCE IG(ON) = 0.05µA ABSOLUTE MAXIMUM RATINGS1

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base