NPN TRANSISTOR IC 50A Search Results

TRANSISTOR MJ11028

Abstract: transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11029

transistor mj11032

Abstract: NPN transistor Ic 50A darlington complementary 120v MJ11032 MJ11033
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11033

NPN transistor Ic 50A

Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.8 -55°C +25°C +100°C +175°C 0.8 IC/IB=100 0.6 0.6 PARTMARKING DETAIL – COMPLEMENTARY TYPE - 0.4 0.4 ABSOLUTE MAXIMUM RATINGS. 0.2 0.2 0.01 0.1 1 10 0.01

FZT688B

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT688B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.6 V V 0.4 0.2 0.01 0.1 1 I+ - Collector Current Amps -55°C +25°C +100°C +175°C 0.8 - (Volts) - (Volts) 0.8 PARTMARKING DETAIL –

FZT688B

Abstract: FZT788B DSA003675
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT688B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.6 V V 0.4 0.2 0.01 0.1 1 I+ - Collector Current Amps -55°C +25°C +100°C +175°C 0.8 - (Volts) - (Volts) 0.8 PARTMARKING DETAIL –

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

BUR20

Contextual Info: SGS-THOMSON BUR20 ^ □ ^ © [E L IC T IH M O e S HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN transistor in modified JedecTO-3 metal case, inten­

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

laser LED

Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF

transistor mj11028 equivalent

Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
Contextual Info: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A

NS11032

Abstract: T0204
Contextual Info: NS11032 ^ IP NEW ENGLAND SEMICONDUCTOR NPN SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE NPN DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O NO LITH IC CO NSTRU CTIO N

Contextual Info: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A

Contextual Info: HIGH POWER NPN SILICON TRANSISTOR STP5508 • Hermetic Metal TO3 Package. • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEB IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage

HIGH POWER NPN SILICON TRANSISTOR

Abstract: STP5508 LE17
Contextual Info: HIGH POWER NPN SILICON TRANSISTOR STP5508 • Hermetic Metal TO3 Package. • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEB IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage

power transistor Ic 4A datasheet NPN smd

Abstract: FZT688B
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT688B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on resistance; RCE sat 83mÙ at 3A. +0.1 3.00-0.1 Gain of 400 at IC=3 Amps and very low saturation voltage.

FZT688B

Abstract: FZT788B DSA003713
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM FZT688B POWER HIGH GAIN TRANSISTOR ISSUE 3- OCTOBER 1995 FEATURES I ! I I RCE ,ti 83mQ at 3A low equivalent on resistance; ‘ Extremely ‘ Gain of 400 at IC=3 Amps and very low saturation voltage c, APPLICATIONS * Flash gun convertors & Batte~

2SD832

Abstract: fujitsu transistor j75c
Contextual Info: 37 nJjTfSU MICROELECTRONICS ] E^|37l4,i7bE OOOlñbt. b FUJITSU 2SD832 M IC R O E L E C T R O N IC S T - > 3 7 4 9 7 1>2 F U J I T S U M I C R O E L E C T R O N I C S 37C SILICON NPN DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating X) TA = 25 "C) Condition

Contextual Info: TOSHIBA MP4503 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M Pa s n •v ■ ■ ■ v w 3 mm HIGH PO W ER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD

Contextual Info: TOSHIBA MP4501 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M P 4 5 fl 1 • V ■ ■ ■ v w ■ HIGH PO W ER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

Contextual Info: T '3 3 SEMELAB LT] L \ 37E ]) • Ô1331Ô7 OOOOlbO 2 ■ SMLB SEMELAB DEC 3 1 1987 .\P TJ&ff BUP51 / >i?d NPN MULTI-EPITAXIAL TRANSISTOR M E C H A N IC A L D A T A Designed for high energy applications requiring robust fast switching devices D im e nsion s in mm

Contextual Info: SEMELAB 37E LTD 0133167 » SEMELAB J U L 0 6 1988 MJ14000 MJ14002 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for switching applications and high power amplifier circuits M E C H A N IC A L D A T A Dim ensions in mm FEATURES « -1 6 • 15 A lo w v ce|sat,

Contextual Info: 37E D SEMELAB LTD • Ô1331Ô7 00DD1Ö0 Ô M S t lL B SEMELAB JUL 0 6 1988 ^ BUT 92A NPN FAST SW ITCHING POWER TRANSISTOR M EC H A N IC A L DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES H-1-6 • VERY LOW V,CE SAT • HIGH EFFICIENCY SWITCHING