NPN TRANSISTOR VCEO 1200V Search Results

IC 37021

Abstract: 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D
Contextual Info: Ordering number : ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=2.0pF).

2SC4632LS

Abstract: ITR07331 ITR07332 ITR07333 ITR07334 ITR07335
Contextual Info: Ordering number : ENN3701B 2SC4632LS NPN Triple Diffused Planar Silicon Transistor 2SC4632LS 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=1.6pF).

IC 37021

Abstract: 2SC4633 37021 EN3702A
Contextual Info: Ordering num ber:EN3702A _ 2SC4633 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 1200V . •Small Cob (typical Cob = 2.0pF). ■Full-isolation package.

2SC4632

Abstract: 11599HA ICP30
Contextual Info: Ordering number:EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=1.6pF). · Full-isolation package.

37021

Abstract: 11599HA 2SC4633 IC 37021
Contextual Info: Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=2.0pF). · Full-isolation package.

NPN Transistor 600V

Abstract: NPN Transistor 1.5A 600V NPN 600V transistor BUX48B transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V NPN 1.5A 1200V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 600V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from

NS1250

Abstract: Solenoid Driver 2a MJ8504 vbe 10v, vce 500v NPN Transistor NPN Transistor 1.5A 700V NPN Transistor VCEO 1200V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ8504 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in

NPN Transistor 1.5A 700V

Abstract: NPN Transistor VCEO 1200V BUV48CFI NPN 1.5A 1200V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from

IC 37021

Abstract: 2sc4633
Contextual Info: I O rd e rin g num ber:E N 3702A _ SAiYO i 2SC4633 NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications Feature^ • High breakdown voltage Vceo min = 1200V . • Small Cob (typical Gob= 2.0pF).

pt 4115 led driver

Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

NPN Transistor 600V

Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)

power transistor npn to-220

Abstract: NPN TRANSISTOR transistor B 560 transistor 800V 1A NPN Transistor VCEO 1200V transistor transistor Ic 4A NPN IC 0116 DC
Contextual Info: Engineer Specification TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching

NPN Transistor TO-220

Abstract: "NPN Transistor" HIGH VOLTAGE npn transistor NPN Transistor VCEO 1200V
Contextual Info: TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

Contextual Info: TSC5327 Preliminary High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching Structure

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.

C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

d5017

Abstract: 3DD5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A
Contextual Info: Case-rated bipolar transistor for type 3DD5017 for low frequency amplification R 3DD5017 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=1200V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV

NTE2588

Contextual Info: NTE2588 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CEO = 1200V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

2SC4941

Abstract: NPN Transistor VCEO 1200V
Contextual Info: SavantIC Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

2SC4941

Contextual Info: Inchange Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

QM5HL-24

Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
Contextual Info: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer

2SC5265

Abstract: EN5321 VCBO-1200V
Contextual Info: Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

D1598HA

Abstract: 2SC4256
Contextual Info: Ordering number:EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .