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    NPN TRANSISTOR VCEO 1200V Search Results

    NPN TRANSISTOR VCEO 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCEO 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 37021

    Abstract: 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D
    Text: Ordering number : ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=2.0pF).


    Original     		PDF ENN3702B 2SC4633LS 2079D 2SC4633LS] O-220FI IC 37021 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D

    2SC4632LS

    Abstract: ITR07331 ITR07332 ITR07333 ITR07334 ITR07335
    Text: Ordering number : ENN3701B 2SC4632LS NPN Triple Diffused Planar Silicon Transistor 2SC4632LS 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=1.6pF).


    Original     		PDF ENN3701B 2SC4632LS 2079D 2SC4632LS] O-220FI 2SC4632LS ITR07331 ITR07332 ITR07333 ITR07334 ITR07335

    2SC4632

    Abstract: 11599HA ICP30
    Text: Ordering number:EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=1.6pF). · Full-isolation package.


    Original     		PDF EN3701A 2SC4632 200V/10mA 2079B 2SC4632] O-220FI 2SC4632 11599HA ICP30

    37021

    Abstract: 11599HA 2SC4633 IC 37021
    Text: Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=2.0pF). · Full-isolation package.


    Original     		PDF EN3702A 2SC4633 200V/30mA 2079B 2SC4633] O-220FI 37021 11599HA 2SC4633 IC 37021

    NPN Transistor 600V

    Abstract: NPN Transistor 1.5A 600V NPN 600V transistor BUX48B transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V NPN 1.5A 1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 600V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from


    Original     		PDF BUX48B NPN Transistor 600V NPN Transistor 1.5A 600V NPN 600V transistor BUX48B transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V NPN 1.5A 1200V

    NS1250

    Abstract: Solenoid Driver 2a MJ8504 vbe 10v, vce 500v NPN Transistor NPN Transistor 1.5A 700V NPN Transistor VCEO 1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ8504 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in


    Original     		PDF MJ8504 NS1250 Solenoid Driver 2a MJ8504 vbe 10v, vce 500v NPN Transistor NPN Transistor 1.5A 700V NPN Transistor VCEO 1200V

    NPN Transistor 1.5A 700V

    Abstract: NPN Transistor VCEO 1200V BUV48CFI NPN 1.5A 1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from


    Original     		PDF BUV48CFI NPN Transistor 1.5A 700V NPN Transistor VCEO 1200V BUV48CFI NPN 1.5A 1200V

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


    Original     		PDF BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425

    NPN Transistor 600V

    Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)


    Original     		PDF 2SC5305 NPN Transistor 600V NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A

    power transistor npn to-220

    Abstract: NPN TRANSISTOR transistor B 560 transistor 800V 1A NPN Transistor VCEO 1200V transistor transistor Ic 4A NPN IC 0116 DC
    Text: Engineer Specification TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching


    Original     		PDF TSC5327 O-220 50pcs TSC5327CZ O-220 power transistor npn to-220 NPN TRANSISTOR transistor B 560 transistor 800V 1A NPN Transistor VCEO 1200V transistor transistor Ic 4A NPN IC 0116 DC

    NPN Transistor TO-220

    Abstract: "NPN Transistor" HIGH VOLTAGE npn transistor NPN Transistor VCEO 1200V
    Text: TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		PDF TSC5327 O-220 TSC5327CZ 50pcs 300uS, NPN Transistor TO-220 "NPN Transistor" HIGH VOLTAGE npn transistor NPN Transistor VCEO 1200V

    Untitled

    Abstract: No abstract text available
    Text: TSC5327 Preliminary High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 800V BVCBO 1200V IC VCE SAT Features 4A 3V @ IC / IB = 2.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching Structure


    Original     		PDF TSC5327 O-220 50pcs TSC5327CZ

    transistor 2sc5387

    Abstract: 2SC5387 NPN Transistor 8A NPN Transistor VCEO 1200V TV power transistor datasheet transistor npn 2a "switching applications" 8a transistor VCBO-1200V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION •High Breakdown Voltage: VCBO= 1200V Min ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display,


    Original     		PDF 2SC5387 64kHz transistor 2sc5387 2SC5387 NPN Transistor 8A NPN Transistor VCEO 1200V TV power transistor datasheet transistor npn 2a "switching applications" 8a transistor VCBO-1200V

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    d5017

    Abstract: 3DD5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A
    Text: Case-rated bipolar transistor for type 3DD5017 for low frequency amplification R 3DD5017 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=1200V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV


    Original     		PDF 3DD5017 3DD5017 D5017 d5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A

    NTE2588

    Abstract: No abstract text available
    Text: NTE2588 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CEO = 1200V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V


    Original     		PDF NTE2588 NTE2588

    2SC4941

    Abstract: NPN Transistor VCEO 1200V
    Text: SavantIC Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


    Original     		PDF 2SC4941 2SC4941 NPN Transistor VCEO 1200V

    2SC4941

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


    Original     		PDF 2SC4941 2SC4941

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


    Original     		PDF 10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V

    2SC5265

    Abstract: EN5321 VCBO-1200V
    Text: Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		PDF EN5321 2SC5265 2079B 2SC5265] O-220FI 2SC5265 EN5321 VCBO-1200V

    D1598HA

    Abstract: 2SC4256
    Text: Ordering number:EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .


    Original     		PDF EN2924A 2SC4256 200V/10mA 2010C 2SC4256] O-220AB SC-46 D1598HA /D148MO, D1598HA 2SC4256

    IC 37021

    Abstract: 2SC4633 37021 EN3702A
    Text: Ordering num ber:EN3702A _ 2SC4633 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 1200V . •Small Cob (typical Cob = 2.0pF). ■Full-isolation package.


    OCR Scan     		PDF EN3702A 2SC4633 IC 37021 37021

    IC 37021

    Abstract: 2sc4633
    Text: I O rd e rin g num ber:E N 3702A _ SAiYO i 2SC4633 NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications Feature^ • High breakdown voltage Vceo min = 1200V . • Small Cob (typical Gob= 2.0pF).


    OCR Scan     		PDF 2SC4633 200V/30mA 100mA 2079B O-220FKLS) 80296YK TA-0465, AX-7506 IC 37021 2sc4633