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    NPN TRANSISTORS 400V 1A Search Results

    NPN TRANSISTORS 400V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTORS 400V 1A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UPT311

    Abstract: SS-050 A UPT312 UPT313 UPT314 UPT315 UPT321 UPT322 UPT323 UPT324
    Contextual Info: POWER TRANSISTORS UPT311 UPT312 UPT313 UPT314 UPT315 2 Amp, 400V, Planar NPN UPT321 UPT322 UPT323 UPT324 UPT325 DESCRIPTION FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current; 3A • Turn-on Time: 200 ns • Turn-off Time-. 800 ns Unitrode high voltage transistors provide


    OCR Scan     		UPT311 UPT312 UPT313 UPT314 UPT315 UPT321 UPT322 UPT323 UPT324 UPT325 SS-050 A UPT315 PDF

    743 ic

    Abstract: JE13009 MJE13009 IC 741 AMP
    Contextual Info: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability


    OCR Scan     		MJE13009 T0-220-AB MJE13009 743 ic JE13009 IC 741 AMP PDF

    2N6510

    Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
    Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass


    OCR Scan     		2N6510 2N6511 2N6512 2N6513 2N6514 2NG510 2N6514 PDF

    2SC2613

    Contextual Info: Inchange Semiconductor Product Specification 2SC2613 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V Min APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING


    Original     		2SC2613 O-220 VCC150V 2SC2613 PDF

    2SC2613

    Contextual Info: SavantIC Semiconductor Product Specification 2SC2613 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector breakdown voltage : VCEO=400V Min APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING


    Original     		2SC2613 O-220 2SC2613 PDF

    TIP47

    Abstract: npn transistors 400V 1A tip50 TIP49 TIP48 TIP47.48 C143EF TIP47..48 tip48 equivalent TIP48 NPN
    Contextual Info: SavantIC Semiconductor Product Specification TIP47/48/49/50 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High sustaining voltage : VCEO sus = 250~400V ·1A rated collector current APPLICATIONS ·High voltage and switching applications


    Original     		TIP47/48/49/50 O-220C TIP47 TIP48 TIP49 TIP50 TIP47 npn transistors 400V 1A tip50 TIP49 TIP48 TIP47.48 C143EF TIP47..48 tip48 equivalent TIP48 NPN PDF

    2SC867

    Contextual Info: Inchange Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=400V min APPLICATIONS ・For high voltage and switching applications PINNING(see Fig.2) PIN


    Original     		2SC867 2SC867 PDF

    TIP47

    Abstract: TIP50 TIP47 POWER OF TRANSISTOR tip47
    Contextual Info: TIP47, 50 High Voltage Power Trasnsitors High Voltage NPN Silicon Power Transistors are designed for line operated audio output amplifier, and switching power supply drivers applications. Features: • Collector-Emitter sustaining voltage- 250 - 400V Minimum .


    Original     		TIP47, 10MHz 200mA. TIP50s TIP47 TIP50 TIP47 POWER OF TRANSISTOR tip47 PDF

    2SC867

    Contextual Info: SavantIC Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High collector-base breakdown voltage :VCBO=400V min APPLICATIONS ·For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION


    Original     		2SC867 2SC867 PDF

    2SC867

    Abstract: npn transistors 400V 1A
    Contextual Info: JMnic Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=400V min APPLICATIONS ・For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base


    Original     		2SC867 2SC867 npn transistors 400V 1A PDF

    2SC2553

    Abstract: IN 400 DC
    Contextual Info: Inchange Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max.@IC=4A APPLICATIONS


    Original     		2SC2553 O-220C VCC200V; 2SC2553 IN 400 DC PDF

    BUT22C

    Abstract: BUT22B BUT22
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22B/C DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)- BUT22B 450V(Min)- BUT22C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		BUT22B/C BUT22B BUT22C BUT22C BUT22B BUT22 PDF

    BUT22

    Abstract: NPN Transistor 1.0A 400V BUT22BF BUT22CF
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22BF/CF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)- BUT22BF 450V(Min)- BUT22CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		BUT22BF/CF BUT22BF BUT22CF BUT22 NPN Transistor 1.0A 400V BUT22BF BUT22CF PDF

    BUS22C

    Abstract: 9v dc motor NPN Transistor 1A 400V BUS22B
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS22B/C DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUS22B 450V (Min)-BUS22C APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		BUS22B/C -BUS22B -BUS22C BUS22B BUS22C BUS22C 9v dc motor NPN Transistor 1A 400V BUS22B PDF

    MJ13071

    Abstract: MJ1307 MJ13070 mj130
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13070 = 450V(Min)—MJ13071 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in


    Original     		MJ13070/13071 --MJ13070 --MJ13071 MJ13070 MJ13071 MJ13071 MJ1307 MJ13070 mj130 PDF

    2sc2555

    Contextual Info: Inchange Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・High collector breakdown voltage VCEO=400V(Min) ・Excellent switching times : tr=1.0 s(Max.) tf=1.0μs(Max.)@ IC=4A APPLICATIONS ・Switching regulator and high voltage


    Original     		2SC2555 VCC200V; 2sc2555 PDF

    2N6674

    Abstract: NPN Transistor 10A 400V 2N6675 300V transistor npn 2a
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION •High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage: V BR CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as:


    Original     		2N6674/6675 2N6674 2N6675 2N6674 NPN Transistor 10A 400V 2N6675 300V transistor npn 2a PDF

    2sc2555

    Abstract: DC DC converter 5v to 200V ic
    Contextual Info: SavantIC Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High collector breakdown voltage VCEO=400V(Min) ·Excellent switching times : tr=1.0µs(Max.) tf=1.0µs(Max.)@ IC=4A APPLICATIONS ·Switching regulator and high voltage


    Original     		2SC2555 2sc2555 DC DC converter 5v to 200V ic PDF

    2SC2553

    Abstract: DC DC converter 5v to 200V ic npn transistors 400V 1A npn transistors 400V 3A
    Contextual Info: SavantIC Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=4A APPLICATIONS ·Switching regulator and high voltage


    Original     		2SC2553 O-220C 2SC2553 DC DC converter 5v to 200V ic npn transistors 400V 1A npn transistors 400V 3A PDF

    2SC2552

    Abstract: npn transistors 400V 1A DC DC converter 5v to 400V DC DC converter 5v to 200V ic npn transistors 400V
    Contextual Info: SavantIC Semiconductor Product Specification 2SC2552 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=0.8A APPLICATIONS ·Switching regulator and high voltage


    Original     		2SC2552 O-220C 2SC2552 npn transistors 400V 1A DC DC converter 5v to 400V DC DC converter 5v to 200V ic npn transistors 400V PDF

    BUX82

    Abstract: BUX83 NPN Transistor VCEO 1000V bux8
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX82/83 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed APPLICATIONS ·Designed for use as high-speed power switch at high


    Original     		BUX82/83 -BUX82 -BUX83 BUX82 BUX83 BUX82 BUX83 NPN Transistor VCEO 1000V bux8 PDF

    e13005 2

    Abstract: E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05
    Contextual Info: MJE13005 NPN POWER TRANSISTORS 400 VOLTS 4 AMP, 75 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • V C E O su s = 400V (Min). • VcEV = 700V blocking capability CASE STYLE T0-220AB


    OCR Scan     		MJE13005 T0-220AB U-J05 JE1300! E13005- e13005 2 E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05 PDF

    MJE13007

    Abstract: v733 VCB 400V MJE13 U105
    Contextual Info: MJE13007 NPN POWER TRANSISTORS 400 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 400V (Min). • VCEV = 700V blocking capability C A S E S T Y L E T0-220AB


    OCR Scan     		MJE13007 T0-220AB ip26j T0-220-AB MJE13007 v733 VCB 400V MJE13 U105 PDF

    Contextual Info: , Lf na. J C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY70A Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEo(sus) = 400V(Min) • Low Collector-Emitter Saturation Voltagetr 5.0V(Max.)@ lc= 4A


    Original     		BUY70A PDF