2N6674 Search Results

2N6675

Abstract: 2N6674 NPN/2N6675
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Switching regulators ・Inverters ・Solenoid and relay drivers ・Deflection circuits PINNING PIN DESCRIPTION

BC140-16

Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
Contextual Info: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688

2N6689

Abstract: 2N6674 2N6675 2N6690
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: 2N6674 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6674 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

RJH6674

Abstract: CA3725 Harris RJH6675 2N6674 2N6675 RJh*6674 27e transistor l0319 2N667S RJH6675
Contextual Info: T Power Transistors SEMICOND SECTOR - IB File Number 1164 4302271 002DGS4 7 « H A S 2N6674, 2N6675, RJH6674, RJH6675 HARRIS - * 3 27E 10-A SwitchRlaX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage

Contextual Info: 2N6674+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N6674

Abstract: NPN Transistor 10A 400V 2N6675 300V transistor npn 2a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION •High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage: V BR CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as:

buw34

Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0

2N6675

Abstract: 2N6674
Contextual Info: SavantIC Semiconductor Product Specification 2N6674 2N6675 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING PIN

BDY90

Abstract: BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15

Q040

Abstract: CA3725 tcv204a GG4U
Contextual Info: HARRIS SEMICOND SECTOR SbE D 43G2271 GG4übl4 2N6674,2N6675 TflO • ¡ H A S File Number 1164.1 7 = 3 5 - / 10-A S w Iteh M a* Power Transistors 9 TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

BDW52

Abstract: BDY90 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C BDW52A BDW52B
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. *C (A) NPN PNP Pd (W) MAX BVc b O BV c e O @lc hFE *TYP v CE(SAT) @ lc *r *TYP (A) (A) (MHZ) (V) (V) MIN MIN MIN MAX 8.0 20 . 5.0 15 15 00 MIN MAX 2N6674 15 175 350 300 2N6675 15 175 450 400 8.0 20 . 5.0

Contextual Info: NPN High Power Silicon Transistors 2N6674 & 2N6675 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/537 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6674 2N6675 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage

NPN triple diffused 60V

Abstract: 2n6675 NPN Transistor 10A 70V marking 20A
Contextual Info: 2N6674 2N6675 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

jan2n6251

Contextual Info: Memsemi NPN Transistors Part Number NPN JANTXV2N6249 2N6250 JAN2N6250 JANS2N6250 JANTX2N6250 JANTXV2N6250 2N6674 2N6689 2N6251 JAN2N6251 JANS2N6251 JANTX2N6251 JANTXV2N6251 2N6675 2N6690 2N6546 2N6676 2N6691 JAN2N6546 JANTX2N6546 JANTXV2N6546 2N6677 2N6692

BUW35

Abstract: BDX85A BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15

2N6674

Abstract: 2N6675 2N6075 00210
Contextual Info: SGS-THOMSON «LlieraWöOi_ S G S-THOMSON 30E 2N6674 2N6675 D NPN HIGH VOLTAGE POWER TRANSISTORS • ■ ■ ■ ■ SWITCHING REGULATORS INVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROLS DEFLECTION CIRCUITS DESCRIPTION High voltage, high speed switching power transis­

2N6674

Abstract: 2N6675 2N6689 2N6690
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage

transistor BC 667

Abstract: TO-8-090 2N 6674 2N6675
Contextual Info: 2N6674, 2N6675 File N u m b e r 10-A Sw itchM ojr Power Transistors 1164.1 T E R M IN A L D E S IG N A T IO N S High-Voltage N -P -N Types for O ff-Line Power Supplies and O ther High-Voltage Sw itching Applications 2N6674 2N6675 »2CS- 2 7 5 I« J E D E C T Q -2 0 4 A A

2N6675

Abstract: 2N6674 2N6689 2N6690
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level 2N6674 JAN JANTX JANTXV 2N6675 2N6689 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: 2N6674+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: NPN High Power Silicon Transistors 2N6674 & 2N6675 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/537 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6674 2N6675 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage

2N6674

Contextual Info: 2N6674 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)