NPN ZG Search Results

2N3855

Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926

BF180

Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
Contextual Info: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

bdl 40

Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
Contextual Info: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor

3055 transistor

Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

bfg67

Contextual Info: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors

BFP91A

Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Contextual Info: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features

transistor marking zg

Abstract: PBSS4320T PBSS5320T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES

Contextual Info: Philips Sem iconductors bb53T31 0031477 00T tM APX Product specification NPN 6 GHz wideband transistor BFP91A N AMER PHILIPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes. It features

transistor smd zG

Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Contextual Info: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband

Contextual Info: Philips Semiconductors • ! bb53T31 0031568 675 U APX _Product_specification NPN 5 GHz wideband transistor ^ BFQ53 N DESCRIPTION AMER PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

smd transistor fq 30

Abstract: BFG17A TRANSISTOR 610 smd
Contextual Info: Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband

transistor zg

Abstract: F689K BF689 zg transistor
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION

Transistor TT 2144

Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).

free transistor equivalent book

Abstract: free all transistor equivalent book transistor marking zg sot23 transistor marking ZG
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4320T 20 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 20 V low VCEsat NPN transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and

transistor marking zg

Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
Contextual Info: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general

Transistor BSX 62-16

Contextual Info: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3

TRANSISTOR c 5578 B

Abstract: 603 transistor npn
Contextual Info: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is

BFQ65

Contextual Info: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz

bfg91a

Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290
Contextual Info: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in

transistor P1P

Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
Contextual Info: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and

BFG195

Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor
Contextual Info: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

PBSS4320T

Abstract: PBSS5320T transistor marking zg
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and

Contextual Info: DISCRETE SEMICONDUCTORS DAT PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat and