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    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    NPTB00050

    Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
    Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from


    Original     		PDF NPTB00050 4000MHz 500-1000MHz EAR99 450mA, 3000MHz, NDS-007 NPTB00050B Gan on silicon substrate ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115

    NPTB00050B

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B

    NPTB000050

    Abstract: NPTB00050 an-004 nitronex Nitron AN 004 nitronex vswr application
    Text: Application Note AN-004 VSWR Testing of NPTB00050 Introduction This application note describes VSWR stress testing of the NPTB00050 device operated at P3dB and being subjected to 10:1 and 20:1 VSWR conditions at both room temperature and at an elevated flange temperature of


    Original     		PDF AN-004 NPTB00050 NPTB00050 NPTB000050 AN-004 an-004 nitronex Nitron AN 004 nitronex vswr application

    NPTB00004

    Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
    Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for


    Original     		PDF NPTB00004 PO150S NPT25015 NPT35015 NPT1012 2xNPT25100 NPTB00004 NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100

    NPT25100

    Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
    Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader


    Original     		PDF NPTB00004 PO150S 99GHz 17GHz -35dBc NPT25015 NPT25100 800-1000MHz NPT25100 NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P

    NPTB0004

    Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
    Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-010 AN-010: NPT25100 NPTB0004 GaN amplifier 100W GaN Bias 25 watt vmos fet NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015

    GaN amplifier temperature compensation

    Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
    Text: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents


    Original     		PDF AN-009 AN-009: NPT25100 GaN amplifier temperature compensation GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt AN009

    NPTB00004

    Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
    Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.


    Original     		PDF NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate

    GaN amplifier

    Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
    Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation

    NPTB0004

    Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
    Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and


    Original     		PDF NPT25015 PO150S NPT251 NPTB00025 AC200B NPTB00040 AC360C NPTB00050 AC360B NPTB0004 NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz

    NPTB00004

    Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012
    Text: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-012 AN-012: 64-QAM NPTB00004 NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012