NS 4250 Search Results

303F

Abstract: PDIP28 U637H256
Contextual Info: U637H256 CapStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Time ‡ 10 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles to SRAM

Am9151

Abstract: CD3024 DK 50 switching
Contextual Info: Am9151 Am9151 1024 x 4 Registered Static RAM with SSR — On-Chip Diagnostics Capability DISTINCTIVE CHARACTERISTICS • • High Speed - 40 ns cycle tim e 25 ns Max. setup and 15 ns Max. clock-to-output On-chip high-speed parallel register for pipelined sys­

Fuse-Programmable PROM

Abstract: CD3024 DK 50 switching
Contextual Info: Am 9151 Am9151 1024 x 4 Registered Static RAM with SSR — On-Chip Diagnostics Capability DISTINCTIVE CHARACTERISTICS • • High Speed - 40 ns cycle tim e 25 ns Max. setup and 15 ns Max. clock-to-output On-chip high-speed parallel register for pipelined sys­

u637256dk

Abstract: 303F PDIP28 U637256
Contextual Info: U637256 CapStore 32K x 8 nvSRAM Not Recommend For New Designs Features Description ‡ CMOS non volatile static RAM 32768 x 8 bits ‡ 70 ns Access Time ‡ 35 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles

all stk ic diagram

Abstract: free stk ic Stk Ic Data Software ic stk 015 free pdf download stk ic PDIP28 U632H64
Contextual Info: U632H64 PowerStore 8K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 8192 x 8 bits ‡ 25 ns Access Time ‡ 12 ns Output Enable Access Time ‡ ICC = 15 mA at 200 ns Cycle Time ‡ Automatic STORE to EEPROM on Power Down using external

303F

Contextual Info: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle

all stk ic diagram

Abstract: ML0047 free stk ic PDIP28 U632H64 Stk Ic Data Software
Contextual Info: U632H64 PowerStore 8K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 8192 x 8 bits ‡ 25 ns Access Time ‡ 12 ns Output Enable Access Time ‡ ICC = 15 mA at 200 ns Cycle Time ‡ Automatic STORE to EEPROM

303F

Abstract: U634H256
Contextual Info: U634H256 PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25, 35 and 45 ns Access Times ‡ 10, 15 and 20 ns Output Enable Access Times ‡ ICC = 15 mA typ. at 200 ns Cycle

u637256dk70z

Abstract: u637256dk 303F PDIP28 U637256
Contextual Info: U637256 CapStore 32K x 8 nvSRAM Features Description ‡ CMOS non volatile static RAM 32768 x 8 bits ‡ 70 ns Access Time ‡ 35 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles to SRAM ‡ Automatic STORE to EEPROM

Contextual Info: A m 9 1 5 1 1 02 4 x 4 Registered Static RAM with SSR — On-Chip Diagnostics Capability DISTINCTIVE CHARACTERISTICS • High Speed - 40 ns cycle time 25 ns Max. setup and 15 ns Max. clock-to-output • On-chip high-speed parallel register for pipelined systerns

Contextual Info: U634H256 PowerStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25, 35 and 45 ns Access Times ‡ 10, 15 and 20 ns Output Enable Access Times ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Automatic STORE to EEPROM

Contextual Info: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle Time ‡ Automatic STORE to EEPROM

303F

Abstract: PDIP28 U637H256 U637H256DK
Contextual Info: U637H256 CapStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Time ‡ 10 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles

U632H16

Abstract: Stk 2048 11
Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Not Recommended For New Designs Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle

303F

Abstract: U631H256
Contextual Info: U631H256 SoftStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Times ‡ 10 ns Output Enable Access Times ‡ Software STORE Initiation ‡ Automatic STORE Timing

U631H256SM

Abstract: 303F U631H256
Contextual Info: U631H256 SoftStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Times ‡ 10 ns Output Enable Access Times ‡ Software STORE Initiation ‡ Automatic STORE Timing ‡ 106 STORE cycles to EEPROM

29057

Abstract: intel 4269
Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time a Low Power Consumption — 20 mA Typical Read Current ■ x8-Only Input/Output Architecture — Space-Constrained 8-bit

BED02

Abstract: DM648 layout DM648 BED09 POWER INDICATE AUTO OFF TIMER CIRCUIT 87a4 BED01 hr 8768 PCI 9054 Detailed Technical Specifications TMS320DM648 dsp application
Contextual Info: TMS320DM647/TMS320DM648 Digital Media Processor www.ti.com SPRS372 – MAY 2007 1 TMS320DM647/TMS320DM648 Digital Media Processor • • • High-Performance Digital Media Processor DM647/DM648 – 720, 900-MHz C64x+ Clock Rate – 1.39, 1.11-ns Instruction Cycle Time

ph 4148

Abstract: pin DIAGRAM OF IC 7400 ph 4148 diode 7400 pin configuration Space Qualified VCXO data sheet IC 7400 SMPTE296 8038 ic tester circuit diagram AES-3 data sheet 7400 IC
Contextual Info: www.ti.com TMS320DM643 Video/Imaging Fixed-Point Digital Signal Processor SPRS269 – FEBRUARY 2005 1 TMS320DM643 Video/Imaging Fixed-Point Digital Signal Processor 1.1 • • • • • • Features High-Performance Digital Media Processor – 2-, 1.67-ns Instruction Cycle Time

Contextual Info: www.ti.com TMS320DM643 Video/Imaging Fixed-Point Digital Signal Processor SPRS269 – FEBRUARY 2005 1 TMS320DM643 Video/Imaging Fixed-Point Digital Signal Processor 1.1 • • • • • • Features High-Performance Digital Media Processor – 2-, 1.67-ns Instruction Cycle Time

Contextual Info: www.ti.com TMS320DM643 Video/Imaging Fixed-Point Digital Signal Processor SPRS269 – FEBRUARY 2005 1 TMS320DM643 Video/Imaging Fixed-Point Digital Signal Processor 1.1 • • • • • • Features High-Performance Digital Media Processor – 2-, 1.67-ns Instruction Cycle Time

CD40118

Abstract: RCA-CD40118 CD40128 FUNCTIONAL DIAGRAM OF CD4011 CD40238 CD4011 CD4023B schematic diagram NAND gates cd4012b CD4023BH
Contextual Info: CD4011B, CD4012B, CD4023B Types COS/MOS NAND Gates Features: High-Voltage Types 20-Volt Rating • Propagation delay time = 60 ns (typ.l at CL=50pF, VDD= 10V • Buffered inputs and outputs • Standardized symmetrical output characteristics • Maximum input current of 1 JJ.A at 18 V

Contextual Info: CY62137FV30 MoBL Automotive 2-Mbit 128 K x 16 Static RAM Automotive 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C

BFCN-4100

Abstract: BFCN
Contextual Info: New Product Announcement! Ceramic Bandpass Filter BFCN-4100+ 50Ω 3700 to 4500 MHz The Big Deal Click here for data sheet • Flat group delay 10 ns • Narrow-band • Good VSWR (1.2:1 typical) • Fast roll-off • Miniature shielded package CASE STYLE: FV1206