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    NSS1C301ET4G Price and Stock

    onsemi NSS1C301ET4G

    TRANS NPN 100V 3A DPAK
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    DigiKey () NSS1C301ET4G Digi-Reel 4,011 1
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    NSS1C301ET4G Cut Tape 4,011 1
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    NSS1C301ET4G Reel 2,500 2,500
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    Avnet Americas NSS1C301ET4G Reel 8 Weeks 5,000
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    Mouser Electronics NSS1C301ET4G 3,654
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    • 10000 $0.237
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    Verical () NSS1C301ET4G 1,676 1,256
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    NSS1C301ET4G 1,540 114
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    Arrow Electronics NSS1C301ET4G 2,500 8 Weeks 2,500
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    Newark () NSS1C301ET4G Cut Tape 6,399 5
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    NSS1C301ET4G Reel 2,500
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    Onlinecomponents.com NSS1C301ET4G
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    Rochester Electronics NSS1C301ET4G 1,676 1
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    Avnet Silica NSS1C301ET4G 2,500 9 Weeks 2,500
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    Chip One Stop NSS1C301ET4G Cut Tape 1,540 0 Weeks, 1 Days 5
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    • 100 $0.371
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    EBV Elektronik NSS1C301ET4G 10 Weeks 2,500
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    • 1 $0.6
    • 10 $0.6
    • 100 $0.38
    • 1000 $0.29
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    NSS1C301ET4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    NSS1C301ET4G
    		On Semiconductor NSS1C301 - TRANSISTOR 3 A, 100 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, PLASTIC, CASE 396C, DPAK-3, BIP General Purpose Power Original PDF 85.87KB 5

    NSS1C301ET4G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1C31EG

    Abstract: 617 300
    Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C301ET4G NSS1C301E/D 1C31EG 617 300 PDF

    Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C301ET4G NSS1C301E/D PDF

    Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C301ET4G NSS1C301E/D PDF

    Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C301ET4G NSS1C301E/D PDF

    Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C301ET4G NSS1C301E/D PDF

    Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C301ET4G NSS1C301E/D PDF

    Contextual Info: NSS1C300ET4G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C300ET4G NSS1C300E/D PDF