NT 68 F 63 LG Search Results

MN39600

Abstract: MN39830 NN12069A nn12069 AN20112 107-pin MN396
Contextual Info: Part No. NN12069A Package Code No. MLGA107-L2-0909 Publication date: November 2006 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur

MN39750

Abstract: mn39850 NN12068A AN20110 107-pin
Contextual Info: Part No. NN12068A Package Code No. MLGA107-L2-0909 Publication date: November 2006 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur

Contextual Info: MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y Unitsinixm -► j 50 I * - 1.5dB NOISE FIGURE AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 180 MICRON GATE WIDTH CHOICE OF CHIP AND TWO PACKAGE TYPES \+m *\ 50 k 356

100-000-001

Abstract: marking L1C
Contextual Info: m m TDC1025 f f l i V M onolithic A /0 Converter Fe a tu re s 8-Bit, 5 0 M s p s • 8 -B it R esolution • 5 0 M s p s C onversion Rate The T R W TD C 10 2 5 is a 5 0 M s p s M e g a S a m p le Per S econd fu ll-p a ra lle l (flash) a n a lo g -to -d lg ita l co nve rter,

Contextual Info: MICROlilAVE TECHNOLOGY bbE D • hlEMlOO G0GG272 Öh3 «MRlilV M w T - A7 18 GHz High Gain, Low Noise GaAs FET MicroWave Technology r i 4268 solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r» i *+ r- • { \ vj L U L * • HIGH AVAILABLE GAIN W HEN BIASED FOR LOW -NOISE

MALLORY CAPACITORS TT series

Abstract: nichicon uvx SERIES CAPACITORS Marcon electrolytic RUBYCON 222 MALLORY CAPACITORS sx nichicon pr series capacitors marcon radial electrolytic capacitor Nichicon KME elna rsg panasonic fl series capacitor
Contextual Info: Aluminum Electrolytic Capacitor C ro ss Reference ALUMINUM ELECTROLYTIC CAPACITORS NIC SERIES NRE-L DESCRIPTION RADIAL, LOW PROFILE ANTI­ SOLVENT, 85°C PAGE ELNA 16 RC ILLINOIS MALLORY CAPACITOR RSC RSS NRSA RADIAL. CURRENT SIZE, ANTI­ SOLVENT, 85°C 12, 13

Contextual Info: / •/ t : Am29203 a Four-Bit Bipolar Microprocessor Slice cJJL /K ie , ^ DISTINCTIVE CHARACTERISTICS • Expandable Register File Built-in Normalization Logic T h e Am 29203 includes th e necessary " h o o k s " to e xpand th e register file externally to any num ber o f

EQUIVALENT 74HCT138

Abstract: T907 74HCT138 S-100-48 FUNCTIONAL APPLICATION OF 74LS138 G1.L 54HC 74HC M54HCT138 M74HCT138
Contextual Info: M54HCT138 M74HCT138 rZJ SGS -THOMSON RiOO [^@[i[L[lgT^ Q R!]ö(gS 3 TO 8 LINE DECODER LOW POWER DISSIPATION |cc = 4 aiA (MAX.) at TA = 25°C HIGH NOISE IMMUNITY Vnih = V N|L= 28% VCc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: n in 512K x 3 2 SRAM MODULE IIlU ocilL n“ !!c - Tel No: 619 674 2233, S u l,. ,00, s,„ Diego c a 92,27. PUMA 68S16000/A-020/025/35/45 Fax No: (619) 674 2230 Description The PUMA 68S16000 is a 16Mbit CMOS High Speed Static RAM in a JEDEC 68 pin surface

K1608

Abstract: asus mainboard diagram ND R433 asus Audi b5 z0123 asus notebook 401 asus schematic diagram z0121 lg r560 circuit diagram
Contextual Info:  ! " # Appendix B Circuit Diagrams * B This appendix has schematic circuit diagrams of the major parts of the notebook’s mainboard. Unless otherwise indicated, this reference has circuit diagrams for mainboard version 4.1. If the mainboard you are repairing is a different version, consult the manufacturer for the appropriate diagrams.

Contextual Info: CLR69 MIL-C-39006/21 Wet Tantalum Capacitors I MallorY W ei T a n ta lu m C a p a c ito rs Silver Case Technology Hermetically Sealed Rugged Construction High Shock and Vibration Capability High Capacitance per Case Size Low DCLand ESR Long Shelf Life GENERAL

epm5130

Abstract: EPM5016
Contextual Info: MPM5130 MPLD □ IJ □ J J □ □ J G S f lG r â l . . Description C M O S , M ask- Pro g ra m m e d Lo g ic D e v ic e M P L D cap ab le of im plementing high-density custom logic functions High-volume replacement for EPM5130 E P L D designs Zero-power operation (typically 25 ¡aA standby)

Contextual Info: E2 WPF1M32-90PJC5 WHITE /MICROELECTRONICS 1Mx325V FLASH MODULE PRELIMINARY* FEATURES • M a xim um A ccess Tim e of 90ns ■ Packaging ■ Embedded Program A lg o rith m s • A u to m a tic a lly program s and v e rifie s d a ta at sp e cifie d address • 68 Lead, P lastic PLCC, 24.71 mm 0.973 inch square

am27s35

Abstract: U3210 AM29203 S103 SI03 SF819
Contextual Info: Am29203 a Four-Bit Bipolar Microprocessor Slice X Â ^ 'V C / / IN­ > 3 DISTINCTIVE CHARACTERISTICS Built-in N orm alization Logic T h e m antissa and e xpo n e nt of a floatin g -p oin t num ­ b er can be developed using a single m icrocycle per shift.

AM29203

Abstract: am2916 S103 SI03 I8050 U321
Contextual Info: Am29203 a Four-Bit Bipolar Microprocessor Slice X Â ^ 'V C / / IN­ > 3 DISTINCTIVE CHARACTERISTICS Id Built-in N orm alization Logic T h e m antissa and e xpo n e nt of a floatin g -p oin t num ­ b er can be developed using a single m icrocycle per shift.

uc 3808

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 k 2134 nec od6000
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

pace1750

Abstract: 11 ak 30 a4 edc5 P1753 IB10 PACE1753 PACE1754
Contextual Info: PERFORMANCE SEMICON DU CT OR 50E I • VObEST? DGDlb^G 34>4 * P S C PACE1753 SINGLE CHIP, 40MHz CMOS MMU/COMBO * r - FEATURES ■ — Illegal address error detection— program m able

Contextual Info: WF128K32-XXX5 WHITE /MICROELECTRONICS 128Kx32 5V FLASH MODULE, SMD 5962-94716 FEA TU R ES • A c c e ss T im e s of 60, 70, 90, 120 and 1 50nS ■ O rg an ize d as 1 2 8K x32 ■ ■ C o m m e rc ia l, In d u s tria l and M ilit a r y T e m p e ra tu re Ranges

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

g16b

Contextual Info: ’ H fl-n - P O T Technical Data CD54/74HC181 CD54/74HCT181 File Num ber HARRIS S E M I C O N D SE CT OR 27E D 4 3 02 27 1 1829 D017bSS 7 « H A S High-Speed CMOS Logic njKCTWt ICkCCT 4-Bit Arithmetic Logic Unit •L U , _LL_Ê—ì '.oc 'S » I oí Type Features:

Contextual Info: WHITE /MICROELECTRONICS 512Kx32 5V FLASH MODULE WPF512K32-XPJC5 PRELIMINARY* FEATURES • ■ A ccess Tim es of 60, 90ns ■ C om m ercial 0 -70°C Range Packaging ■ 5 V olt Program m ing. 5V + 10% S upply • 68 Lead, P la stic PLCC, 24.94 mm 0.982 inch square

Contextual Info: a WSF128K32V-XG2TX WHITE /MICROELECTRONICS 128Kx32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH M EM ORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM ) and 90ns (FLASH) ■ • 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch) square

CLEVO

Abstract: SUPPLY98 e11ah DIODE SMD Z18 keyboard and touchpad schematic HS217 y12e C122C1 schematic lg backlight inverter F01J2
Contextual Info: Model 2200S/2700S Service Manual Mainboard 71-2200S-D01B Switchboard 71-22002-001 Invertor board LED Board Part of switchboard Power Board (part of mainboard) Specifications are subject to change without notice. September, 2000 2200S/2700S Service Manual

DD54 diode

Abstract: TM121SV-02L07 STR DD37 BU CLEVO CZ633 evo cn GP 502 mcl d01 display keyboard and touchpad schematic intel dg 41 rq ST U1,3 Z224
Contextual Info: Model 5100S/5500S Service Manual Mainboard D/D board Inverter board Hard transfer board Specifications are subject to change without notice. October, 2000 Contents System specifications . 1