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Rochester Electronics LLC NTD4809N-1G MOSFET N-CH 30V 9.6A/58A IPAK
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DigiKey	NTD4809N-1G	Tube			2,959	1 - 10 - 100 - 1000 - 10000 $0.1	Buy Now
onsemi NTD4809N-1G MOSFET N-CH 30V 9.6A/58A IPAK
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DigiKey	NTD4809N-1G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	NTD4809N-1G		5,824		3,619	1 - 10 - 100 - 1000 - 10000 $0.1036	Buy Now
Rochester Electronics	NTD4809N-1G		6,748		1	1 $0.0975 10 $0.0975 100 $0.0917 1000 $0.0829 10000 $0.0829	Buy Now
Rochester Electronics LLC NTD4809NT4H RF MOSFET 30V DPAK
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DigiKey	NTD4809NT4H	Bulk			1,480	1 - 10 - 100 - 1000 - 10000 $0.2	Buy Now
onsemi NTD4809NA-1G MOSFET N-CH 30V 9.6A/58A IPAK
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DigiKey	NTD4809NA-1G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	NTD4809NA-1G		48,500		3,619	1 - 10 - 100 - 1000 - 10000 $0.1036	Buy Now
	NTD4809NA-1G		37,500		3,619	1 - 10 - 100 - 1000 - 10000 $0.1036	Buy Now
Rochester Electronics	NTD4809NA-1G		86,000		1	1 $0.0975 10 $0.0975 100 $0.0917 1000 $0.0829 10000 $0.0829	Buy Now
Rochester Electronics LLC NTD4809NA-1G MOSFET N-CH 30V 9.6A/58A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD4809NA-1G	Tube			2,959	1 - 10 - 100 - 1000 - 10000 $0.1	Buy Now

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NTD4809N Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
NTD4809N	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF
NTD4809N-1G	On Semiconductor	NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, IPAK-3, FET General Purpose Power	Original	PDF
NTD4809N-1G	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK	Original	PDF
NTD4809N-35G	On Semiconductor	NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AD-01, IPAK-3, FET General Purpose Power	Original	PDF
NTD4809N-35G	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF
NTD4809NA-1G	ON Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A IPAK	Original	PDF
NTD4809NA-35G	ON Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A IPAK	Original	PDF
NTD4809NAT4G	ON Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A DPAK	Original	PDF
NTD4809NH	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF
NTD4809NH-1G	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF
NTD4809NH-35G	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF
NTD4809NHT1G	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF
NTD4809NHT4G	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF
NTD4809NT4G	On Semiconductor	NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3, FET General Purpose Power	Original	PDF

NTD4809NT4G	On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK	Original	PDF

NTD4809N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809NH NTD4809NH/D
48 09ng Abstract: 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D Text: NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	PDF	NTD4809NA NTD4809NA/D 48 09ng 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D
09nhg Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4809NH NTD4809NH/D 09nhg NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
Untitled Abstract: No abstract text available Text: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant	Original	PDF	NTD4809N, NVD4809N NTD4809N/D
mosfet 48 09ng Abstract: 09ng 48 09ng 4809ng 4809N Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4809N NTD4809N/D mosfet 48 09ng 09ng 48 09ng 4809ng 4809N
48 09ng Abstract: 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX	Original	PDF	NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N
09ng Abstract: 48 09ng mosfet on 09ng mosfet 48 09ng NTD4809NT4G 4809N 369D 4809ng 09ng 040 48 NTD4809N Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809N NTD4809N/D 09ng 48 09ng mosfet on 09ng mosfet 48 09ng NTD4809NT4G 4809N 369D 4809ng 09ng 040 48 NTD4809N
48 09NHG Abstract: 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809NH NTD4809NH/D 48 09NHG 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G
48 09ng Abstract: 09ng 4809ng mosfet 48 09ng mosfet on 09ng Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809N NTD4809N/D 48 09ng 09ng 4809ng mosfet 48 09ng mosfet on 09ng
Untitled Abstract: No abstract text available Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH	Original	PDF	NTD4809NH, NVD4809NH AEC-Q101 NTD4809NH/D
48 09ng Abstract: 09ng Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809N NTD4809N/D 48 09ng 09ng
369D Abstract: NTD4809NH NTD4809NHT1G NTD4809NHT4G Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809NH NTD4809NH/D 369D NTD4809NH NTD4809NHT1G NTD4809NHT4G
48 09ng Abstract: 4809ng 09ng mosfet 48 09ng 4809N mosfet 85 09ng NTD4809NT4G 002 48 09ng mosfet on 09ng 369AD Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX	Original	PDF	NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet 48 09ng 4809N mosfet 85 09ng NTD4809NT4G 002 48 09ng mosfet on 09ng 369AD
09ng Abstract: 4809ng mosfet 48 09ng 48 09ng mosfet on 09ng Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809N NTD4809N/D 09ng 4809ng mosfet 48 09ng 48 09ng mosfet on 09ng

48 09ng Abstract: 4809ng 09ng mosfet on 09ng 4809n NTD4809NT4G mosfet 48 09ng NTD4809N marking e3 NTD4809N-35G Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS	Original	PDF	NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet on 09ng 4809n NTD4809NT4G mosfet 48 09ng NTD4809N marking e3 NTD4809N-35G
Untitled Abstract: No abstract text available Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH	Original	PDF	NTD4809NH, NVD4809NH NTD4809NH/D
48 09ng Abstract: 09NG 4809ng mosfet 48 09ng mosfet on 09ng 4809n mosfet on 48 09ng 369D 125C10 09ng 040 48 Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4809N NTD4809N/D 48 09ng 09NG 4809ng mosfet 48 09ng mosfet on 09ng 4809n mosfet on 48 09ng 369D 125C10 09ng 040 48
09nhg Abstract: 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809NH NTD4809NH/D 09nhg 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG
mosfet on 48 09ng Abstract: mosfet on 09ng 48 09ng 4809ng 09ng on 48 09ng 4809n mosfet 48 09ng 369D NTD4809N Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4809N NTD4809N/D mosfet on 48 09ng mosfet on 09ng 48 09ng 4809ng 09ng on 48 09ng 4809n mosfet 48 09ng 369D NTD4809N
09nhg Abstract: 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4809NH NTD4809NH/D 09nhg 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	PDF	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
utx hqx Abstract: ps223 MOV 471K t3 15A 250V mst POT3319 SUSCON capacitor power supply ATX12v SCHEMATICS smd diode S4 58a ncp1396 ic ps223 equivalent Text: TND359/D Rev 0, Jan-09 High-Efficiency 255 W ATX Power Supply Reference Design Documentation Package 1 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or	Original	PDF	TND359/D Jan-09 IEC61000-3-2 NCP1654 NCP1396 NCP4302 NCP1587 NCP1027 NTD4809 MBR20L45 utx hqx ps223 MOV 471K t3 15A 250V mst POT3319 SUSCON capacitor power supply ATX12v SCHEMATICS smd diode S4 58a ic ps223 equivalent
ncp5215 Abstract: NCP5388 elektronik DDR D 2689 ncp5387 NTMFS4833 pwm 3 phase west lake capacitors 0808 DAC dac 0808 Text: DO NOT PRINT - TRIM AREA No-Latch, Dual-Edge Modulation Vcore Controllers for VR11.0 and VR10.X Applications DO NOT PRINT - TRIM AREA The NCP5387 and NCP5382 are multi-phase buck controllers which combine differential voltage and current sensing, and adaptive voltage	Original	PDF	NCP5387 NCP5382 BRD8025-3 BRD8025/D ncp5215 NCP5388 elektronik DDR D 2689 NTMFS4833 pwm 3 phase west lake capacitors 0808 DAC dac 0808

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NTD4809N Price and Stock

Rochester Electronics LLC NTD4809N-1G

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Rochester Electronics LLC NTD4809NA-1G

NTD4809N Datasheets (15)

NTD4809N Datasheets Context Search

Untitled

48 09ng

09nhg

Untitled

mosfet 48 09ng

48 09ng

09ng

48 09NHG

48 09ng

Untitled

48 09ng

369D

48 09ng

09ng

48 09ng

Untitled

48 09ng

09nhg

mosfet on 48 09ng

09nhg

irfb4115

NTP2955G

utx hqx

ncp5215