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    NTD4815NHT4G Price and Stock

    onsemi NTD4815NHT4G

    MOSFET N-CH 30V 6.9A/35A DPAK
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    Verical () NTD4815NHT4G 581,121 3,912
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    NTD4815NHT4G 31,120 3,912
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    Rochester Electronics NTD4815NHT4G 612,241 1
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    Rochester Electronics LLC NTD4815NHT4G

    MOSFET N-CH 30V 6.9A/35A DPAK
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    DigiKey NTD4815NHT4G Bulk 3,122
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    NTD4815NHT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    NTD4815NHT4G
    On Semiconductor Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Original PDF 87.83KB 8

    NTD4815NHT4G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    369D

    Abstract: NTD4815NH NTD4815NHT4G 15nhg
    Contextual Info: NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com


    Original
    NTD4815NH NTD4815NH/D 369D NTD4815NH NTD4815NHT4G 15nhg PDF

    Contextual Info: NTD4815NH Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com


    Original
    NTD4815NH NTD4815NH/D PDF

    369D

    Abstract: NTD4815NH 15nhg 4815nhg
    Contextual Info: NTD4815NH Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices


    Original
    NTD4815NH NTD4815NH/D 369D NTD4815NH 15nhg 4815nhg PDF

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original
    CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G PDF

    369D

    Abstract: NTD4815NH 15nhg
    Contextual Info: NTD4815NH Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com


    Original
    NTD4815NH NTD4815NH/D 369D NTD4815NH 15nhg PDF

    15NHG

    Abstract: 369D NTD4815NH 4815NH
    Contextual Info: NTD4815NH Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices


    Original
    NTD4815NH NTD4815NH/D 15NHG 369D NTD4815NH 4815NH PDF