NTE2164 Search Results
NTE2164 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NTE2164 |
|
NMOS / 64k DRAM | Scan | 166.77KB | 1 |
NTE2164 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NTE2164Contextual Info: NTE2164 Integrated Circuit 65,536 X 1 Bit Dynamic Random Access Memory Description: The NTE2164 is 65, 536 words by 1 bit Dynamic N−Channel MOS RAM designed to operate from a single +5V power supply. The negative−voltage substrate bias is internally generated−its operation |
Original |
NTE2164 NTE2164 Note12 Note13 | |
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Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q |
OCR Scan |
NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead | |
a5 gnd
Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
|
OCR Scan |
NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128 |