NTE239 Search Results
NTE239 Price and Stock
NTE Electronics Inc NTE2397Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 |
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NTE2397 | 3 | 1 |
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NTE2397 | Bulk | 23 | 1 |
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NTE2397 | 2 |
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NTE2397 | 9 |
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NTE2397 | 12 | 1 |
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NTE Electronics Inc NTE2393N Channel Mosfet, 500V, 9A, To-3P; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2393 |
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NTE Electronics Inc NTE2392N Channel Mosfet, 100V, 40A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2392 |
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NTE Electronics Inc NTE2396MOSFET, N-Ch, VDSS 100V, RDS(ON) 0.077Ohm, ID 28A, TO-220,PD 150W, VGS +/-20V, Qg 69nC |
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NTE2396 | Bulk | 2 | 3 Weeks | 1 |
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NTE2396 | 22 |
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NTE Electronics Inc NTE2399MOSFET, N-Ch, VDSS 1000V, RDS(ON) 0.5Ohm, ID 3.1A, TO-220,PD 125W, VGS +/-20V, Qg 80nC |
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NTE2399 | Bulk | 1 | 1 |
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NTE2399 | 7 |
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NTE239 Datasheets (11)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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NTE239 |
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Silicon Controlled Switch (SCS) | Original | 23.1KB | 2 | |||
NTE2390 |
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MOSFET N-Channel Enhancement Mode, High Speed Switch | Original | 25.76KB | 3 | |||
NTE2392 |
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MOSFET N-Channel Enhancement Mode, High Speed Switch | Original | 27.09KB | 3 | |||
NTE2393 |
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MOSFET N-Channel Enhancement Mode, High Speed Switch | Original | 24.42KB | 3 | |||
NTE2394 |
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MOSFET N-Channel Enhancement Mode, High Speed Switch | Original | 25.36KB | 3 | |||
NTE2395 |
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MOSFET N-Ch, Enhancement Mode High Speed Switch | Original | 27.92KB | 3 | |||
NTE2396 |
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MOSFET N-Ch, Enhancement Mode High Speed Switch | Original | 27.97KB | 3 | |||
NTE2396A |
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MOSFET N-CHANNEL 100V 33A TO220 | Original | 76.46KB | 3 | |||
NTE2397 |
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MOSFET N-Ch, Enhancement Mode High Speed Switch | Original | 27.86KB | 3 | |||
NTE2398 |
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MOSFET N-Ch, Enhancement Mode High Speed Switch | Original | 27.86KB | 3 | |||
NTE2399 |
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MOSFET N-Ch, Enhancement Mode High Speed Switch | Original | 27.91KB | 3 |
NTE239 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NTE2392Contextual Info: NTE2392 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical |
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NTE2392 NTE2392 | |
scs thyristor
Abstract: icer capacitor NTE239
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NTE239 NTE239 scs thyristor icer capacitor | |
NTE2398Contextual Info: NTE2398 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A |
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NTE2398 NTE2398 | |
NTE2396Contextual Info: NTE2396 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Current Sense D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: |
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NTE2396 NTE2396 | |
Nte2395Contextual Info: NTE2395 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID |
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NTE2395 Nte2395 | |
Contextual Info: NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical |
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NTE2392 NTE2394 | |
NTE2393Contextual Info: NTE2393 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2393 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical |
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NTE2393 NTE2393 100kHz | |
NTE2394Contextual Info: NTE2394 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical |
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NTE2394 NTE2394 100kHz | |
NTE2397
Abstract: Transistor Mosfet N-CH 200V 40A
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NTE2397 NTE2397 Transistor Mosfet N-CH 200V 40A | |
scs thyristor
Abstract: TO72 package
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NTE239 NTE239 scs thyristor TO72 package | |
NTE2399Contextual Info: NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A |
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NTE2399 NTE2399 | |
NTE2390Contextual Info: NTE2390 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching |
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NTE2390 NTE2390 | |
NTE2392
Abstract: transistor tl 187
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NTE2392 NTE2392 transistor tl 187 | |
Contextual Info: NTE2392 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)32 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) |
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NTE2392 | |
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NTE199
Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
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MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K | |
STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
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100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 | |
100 amp npn darlington power transistors
Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
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NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP | |
SSH6N80
Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
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MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020 | |
NTE135A
Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
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NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159 |