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    NTE239 Search Results

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    NTE239 Price and Stock

    NTE Electronics Inc NTE2397

    Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220
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    Arrow Electronics NTE2397 3 1
    • 1 $0.4127
    • 10 $0.4106
    • 100 $0.4083
    • 1000 $0.408
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    RS NTE2397 Bulk 23 1
    • 1 $6.24
    • 10 $6.24
    • 100 $5.68
    • 1000 $5.36
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    Onlinecomponents.com NTE2397 7
    • 1 -
    • 10 $6.46
    • 100 $4.98
    • 1000 $4.45
    • 10000 $4.23
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    Bristol Electronics NTE2397 3 1
    • 1 $8.96
    • 10 $8.96
    • 100 $8.96
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    Quest Components NTE2397 9
    • 1 $10.845
    • 10 $5.4225
    • 100 $5.4225
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    NTE2397 2
    • 1 $12
    • 10 $8
    • 100 $8
    • 1000 $8
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    TME NTE2397 12 1
    • 1 $6.85
    • 10 $5.44
    • 100 $4.89
    • 1000 $4.89
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    NTE Electronics Inc NTE2392

    N Channel Mosfet, 100V, 40A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2392
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    Newark NTE2392 Bulk 1
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    Bristol Electronics NTE2392 2 1
    • 1 $20.4
    • 10 $20.4
    • 100 $20.4
    • 1000 $20.4
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    Quest Components NTE2392 1
    • 1 $22.1
    • 10 $22.1
    • 100 $22.1
    • 1000 $22.1
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    NTE Electronics Inc NTE2393

    N Channel Mosfet, 500V, 9A, To-3P; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2393
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    Newark NTE2393 Bulk 1
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    Bristol Electronics NTE2393 2
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    NTE2393 2 1
    • 1 $11.2
    • 10 $11.2
    • 100 $11.2
    • 1000 $11.2
    • 10000 $11.2
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    Quest Components NTE2393 4
    • 1 $18.075
    • 10 $13.5563
    • 100 $13.5563
    • 1000 $13.5563
    • 10000 $13.5563
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    NTE2393 1
    • 1 $15
    • 10 $10
    • 100 $10
    • 1000 $10
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    NTE2393 1
    • 1 $12.5213
    • 10 $12.5213
    • 100 $12.5213
    • 1000 $12.5213
    • 10000 $12.5213
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    NTE Electronics Inc NTE2396

    MOSFET, N-Ch, VDSS 100V, RDS(ON) 0.077Ohm, ID 28A, TO-220,PD 150W, VGS +/-20V, Qg 69nC | NTE Electronics Inc. NTE2396
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS NTE2396 Bulk 2 3 Weeks 1
    • 1 $6.41
    • 10 $6.41
    • 100 $6.41
    • 1000 $6.41
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    Onlinecomponents.com NTE2396 24
    • 1 $6.71
    • 10 $6.1
    • 100 $4.69
    • 1000 $4.19
    • 10000 $4.12
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    Bristol Electronics NTE2396 2 1
    • 1 $6.72
    • 10 $6.72
    • 100 $6.72
    • 1000 $6.72
    • 10000 $6.72
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    Quest Components NTE2396 1
    • 1 $9
    • 10 $6
    • 100 $6
    • 1000 $6
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    TME NTE2396 10 1
    • 1 $6.41
    • 10 $5.09
    • 100 $4.58
    • 1000 $4.58
    • 10000 $4.58
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    NTE Electronics Inc NTE2399

    MOSFET, N-Ch, VDSS 1000V, RDS(ON) 0.5Ohm, ID 3.1A, TO-220,PD 125W, VGS +/-20V, Qg 80nC | NTE Electronics Inc. NTE2399
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS NTE2399 Bulk 2 1
    • 1 $8.93
    • 10 $8.93
    • 100 $8.13
    • 1000 $7.69
    • 10000 $7.69
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    Onlinecomponents.com NTE2399 7
    • 1 -
    • 10 $9.34
    • 100 $7.19
    • 1000 $6.38
    • 10000 $6.07
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    Find more NTE239 price and stock on Findchips.com

    NTE239 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE239 NTE Electronics Silicon Controlled Switch (SCS) Original PDF
    NTE2390 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2392 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2393 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2394 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2395 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2396 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2396A NTE Electronics MOSFET N-CHANNEL 100V 33A TO220 Original PDF
    NTE2397 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2398 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2399 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF

    NTE239 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2392

    Abstract: No abstract text available
    Text: NTE2392 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2392 NTE2392

    scs thyristor

    Abstract: icer capacitor NTE239
    Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage


    Original     		PDF NTE239 NTE239 scs thyristor icer capacitor

    NTE2398

    Abstract: No abstract text available
    Text: NTE2398 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A


    Original     		PDF NTE2398 NTE2398

    NTE2396

    Abstract: No abstract text available
    Text: NTE2396 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Current Sense D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings:


    Original     		PDF NTE2396 NTE2396

    Nte2395

    Abstract: No abstract text available
    Text: NTE2395 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID


    Original     		PDF NTE2395 Nte2395

    Untitled

    Abstract: No abstract text available
    Text: NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2392 NTE2394

    NTE2393

    Abstract: No abstract text available
    Text: NTE2393 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2393 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2393 NTE2393 100kHz

    NTE2394

    Abstract: No abstract text available
    Text: NTE2394 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2394 NTE2394 100kHz

    NTE2397

    Abstract: Transistor Mosfet N-CH 200V 40A
    Text: NTE2397 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A


    Original     		PDF NTE2397 NTE2397 Transistor Mosfet N-CH 200V 40A

    scs thyristor

    Abstract: TO72 package
    Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage


    Original     		PDF NTE239 NTE239 scs thyristor TO72 package

    NTE2399

    Abstract: No abstract text available
    Text: NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A


    Original     		PDF NTE2399 NTE2399

    NTE2390

    Abstract: No abstract text available
    Text: NTE2390 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching


    Original     		PDF NTE2390 NTE2390

    NTE2392

    Abstract: transistor tl 187
    Text: NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		PDF NTE2392 NTE2392 transistor tl 187

    Untitled

    Abstract: No abstract text available
    Text: NTE2392 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)32 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		PDF NTE2392

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    100 amp npn darlington power transistors

    Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
    Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0


    Original     		PDF NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    NTE135A

    Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
    Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.


    Original     		PDF NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159