NTE3320 Search Results
NTE3320 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NTE3320 |
|
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.56KB | 2 |
NTE3320 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NTE3320Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
NTE3320 NTE3320 | |
NTE3320Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
NTE3320 NTE3320 | |
|
Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
NTE3320 |