NTE64 Search Results

low voltage scr

Abstract: nte6403 triac phase control circuits diode all SBS thyristor
Contextual Info: NTE6403 Integrated Circuit Silicon Bilateral Switch SBS Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate

NTE6400

Abstract: NTE6400A rbbo unijunction transistor
Contextual Info: NTE6400 & NTE6400A Unijunction Transistor TO39 Type Package Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,

NTE6400A

Abstract: NTE6400
Contextual Info: NTE6400 & NTE6400A Unijunction Transistor Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,

Contextual Info: NTE6408-7 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

Contextual Info: NTE6408 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

Contextual Info: NTE6407 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

NTE64

Contextual Info: NTE64 Silicon NPN Transistor UHF High Speed Switch Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA

applications of ujt

Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download
Contextual Info: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)

NTE6412

Abstract: NTE6407 NTE6408 NTE6411 DO35 VBO24
Contextual Info: NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes DIACS Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity

Contextual Info: NTE6412 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)56 V(BO) Max. (V)70 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

50Hz sine wave generator

Abstract: 50hz sine generator xenon ignitor sidac ignitor xenon DIACS xenon lamp igniter NTE6416 NTE6419 Sine Wave Generator
Contextual Info: NTE6415 thru NTE6419 Bidirectional Thyristor Diodes SIDAC Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding

NTE6409

Contextual Info: NTE6409 Unijunction Transistor Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 2µA Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity

Contextual Info: NTE6407-92 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

Contextual Info: NTE6407-7 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

NTE6404

Abstract: four-layer diode Silicon unilateral switch four layer diode SCR 30v
Contextual Info: NTE6404 Silicon Unilateral Switch SUS Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts

NTE6401

Contextual Info: NTE6401 Unijunction Transistor Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 5µA Max D Low Emitter Reverse Current: .005µA (Typ) D Passivated Surface for Reliability & Uniformity

nte6403

Abstract: low voltage scr triac phase control circuits triac phase control SBS thyristor
Contextual Info: NTE6403 Integrated Circuit Silicon Bilateral Switch SBS Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate

Contextual Info: NTE64 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: NTE6411 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)35 V(BO) Max. (V)45 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

NTE6402

Abstract: "Programmable Unijunction Transistor" unijunction programmable unijunction transistor
Contextual Info: NTE6402 Programmable Unijunction Transistor PUT Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and

diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor