NTMS4177PR2G Search Results

AND8350

Abstract: NTGS4141NT1G NTD4808N-1G NTMS4177PR2G ntsg4111pt1g poly switch fuse ntr4170nt1g NTD4815N-1G NTHS4166NT1G 5-A19
Contextual Info: AND8350 eFuse Reverse Voltage Protection Prepared by: Alan Ball ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction the high side or an n-channel FET can be added in the low side. N-channel FETs are more cost effective and are normally preferred if it is acceptable to break the ground line. If the

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

4177P

Abstract: PD-152 BOARD NTMS4177PR2G
Contextual Info: NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăSOIC-8 Surface Mount Package Saves Board Space

Contextual Info: NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăSOIC-8 Surface Mount Package Saves Board Space