Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NUMONYX 106 BALL Search Results

    NUMONYX 106 BALL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860PVR80D4 Rochester Electronics LLC 32-BIT, 80MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC855TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860ENZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    NUMONYX 106 BALL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    numonyx 106 ball

    Abstract: strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 512-Mbit LX Family with LPSDRAM (x32) Datasheet Product Features „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration — 32-bit bus width


    Original     		PDF L18/L30 512-Mbit 256-Mbit 32-bit 16-Mbit x32SH x16SB x16/x32 numonyx 106 ball strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18

    PF38F4050L0ZTQ0

    Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit


    Original     		PDF L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit

    PF38F4470LLyBB0

    Abstract: numonyx 106 ball numonyx 107-ball 8 to 256 decoder using 4 t0 16 decoders
    Text: Numonyx StrataFlash Wireless Memory L18 512-Mbit LX Family with LPSDRAM (x16) Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128- or 256-Mbit — LPSDRAM die density: 128- or 256-Mbit — Async SRAM die density: 8-Mbit


    Original     		PDF 512-Mbit 256-Mbit x32SH x16SB x16/x32 PF38F4470LLyBB0 numonyx 106 ball numonyx 107-ball 8 to 256 decoder using 4 t0 16 decoders

    JS28F256m

    Abstract: js28f256m29 JS28F512 256M29EWH
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F256m js28f256m29 JS28F512 256M29EWH

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0

    JS28F128M29EWL

    Abstract: JS28F064M29 JS28F128M29 JS28F128M29EWH M29EWT JS28F064 M29EWB JR28F032M29EWT JR28F064M29EW JS28F128M29EW
    Text: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read


    Original     		PDF M29EW 128-Mbit, 64-Mbit, 32-Mbit 256-word 128Mbit: 64Mbit: -flash/parallel-nor-flash/js28f064m29ewha JS28F128M29EWL JS28F064M29 JS28F128M29 JS28F128M29EWH M29EWT JS28F064 M29EWB JR28F032M29EWT JR28F064M29EW JS28F128M29EW

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, 100ns 512-word 48MB/s) Kbytes/64

    PF48F3000

    Abstract: 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18 28F128L18, 28F256L18 Datasheet Product Features „ „ High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		PDF 28F128L18, 28F256L18 128-Mbit 16-Mbit 256-Mbit 16-Kword 64-Kword x32SH x16SB x16/x32 PF48F3000 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18

    PF38F4060M

    Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte PF38F4060M PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901

    numonyx 106 ball

    Abstract: numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option


    Original     		PDF 768-Mbit 256-Mbit 64-Mbit 11x13 numonyx 106 ball numonyx 107-ball Numonyx StrataFlash M18

    JS28F512

    Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 11-Apr-2011 PC28F00AM29EWHB JS28F512 JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256

    PF38F4060M

    Abstract: PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A
    Text: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 PF38F4060M PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A

    WP1F

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit x32SH x16SB x16/x32 8x10x1 PF48F3000M0Y0QE WP1F

    WP1F

    Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 8x10x1 WP1F BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Velocity LP™ NV-RAM Mobile-DDR Flash Memory 512 Mbit and 1 Gbit Datasheet „ High-performance DDR-Mobile Interface — Two data transfers per clock cycle — Mega-transfers per second: — 333 with 16 pF load — 266 with 20 pF load — 200 with 24 pF load


    Original     		PDF 256-bit 16-words DDR333) DDR266) DDR200) 0b0000000010010 0b0000000010011 X16/X32 119-ball) 9x11x1

    numonyx intel

    Abstract: 28F128L30 28F256L30 RD48F4000L0ZBQ0 RD48F4000L0ZTQ0 PF48F3000 4400p0 Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L30 28F128L30, 28F256L30 Datasheet Product Features „ „ „ High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		PDF 28F128L30, 28F256L30 16-Mbit: 256-Mbit 16-Kword 64-Kword x32SH x16SB x16/x32 numonyx intel 28F128L30 28F256L30 RD48F4000L0ZBQ0 RD48F4000L0ZTQ0 PF48F3000 4400p0 Numonyx StrataFlash M18

    M29EWH

    Abstract: M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball
    Text: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read


    Original     		PDF M29EW 128-Mbit, 64-Mbit, 32-Mbit 256-word 128Mbit: 64Mbit: M29EWH M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball

    strataflash 512mbit

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F
    Text: Numonyx Wireless Flash Memory W18 Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed


    Original     		PDF 128-Bit x32SH x16SB x16/x32 strataflash 512mbit FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F

    numonyx 106 ball

    Abstract: A18A5 f2ck XA26
    Text: Numonyx Velocity LP™ NV-RAM Mobile-DDR Flash Memory 512 Mbit and 1 Gbit Datasheet „ High-performance DDR-Mobile Interface — Two data transfers per clock cycle — Mega-transfers per second: — 333 with 16 pF load — 266 with 20 pF load — 200 with 24 pF load


    Original     		PDF 256-bit 16-words DDR333) DDR266) DDR200) 0b0000000010010 0b0000000010011 X16/X32 119-ball) 9x11x1 numonyx 106 ball A18A5 f2ck XA26

    Stacked 4MB NOR FLASH & SRAM with AD multiplexed

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
    Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		PDF x32SH x16SB x16/x32 Stacked 4MB NOR FLASH & SRAM with AD multiplexed FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball