Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NUS3116MTR2G Search Results

    SF Impression Pixel

    NUS3116MTR2G Price and Stock

    Rochester Electronics LLC NUS3116MTR2G

    IC BATT PWR MGMT 8DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NUS3116MTR2G Bulk 62,795 342
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.88
    • 10000 $0.88
    		Buy Now

    onsemi NUS3116MTR2G

    IC BATT PWR MGMT 8DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () NUS3116MTR2G Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    NUS3116MTR2G Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Verical () NUS3116MTR2G 57,000 355
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.8773
    • 10000 $0.7821
    		Buy Now
    NUS3116MTR2G 5,795 355
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.8773
    • 10000 $0.7821
    		Buy Now
    Rochester Electronics NUS3116MTR2G 62,795 1
    • 1 -
    • 10 -
    • 100 $0.8455
    • 1000 $0.7018
    • 10000 $0.6257
    		Buy Now

    NUS3116MTR2G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    NUS3116MTR2G
    		On Semiconductor Main Switch Power MOSFET -12 V, -6.2 A, uCool Single P-Channel with Dual PNP Low Vce(sat) Transistors Original PDF 173.61KB 10

    NUS3116MTR2G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NUS3116MT

    Contextual Info: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		NUS3116MT NUS3116MT/D NUS3116MT PDF

    AYWW marking code IC

    Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
    Contextual Info: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547 PDF