NX6406GH Search Results

Contextual Info: NEC’s 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6406 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE:

laser diode nec

Abstract: NX6406 NX6406GH NX6406GK PX10160E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NX6406

Abstract: NX6406GH NX6406GH-AZ NX6406GK NX6406GK-AZ
Contextual Info: NECʼs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6406 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE:

NX6406

Abstract: NX6406GH NX6406GK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6406 Series 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR FTTH PON APPLICATION DESCRIPTION The NX6406 Series is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.