NXP P MOSFET Search Results

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

charging ic laptop motherboard

Abstract: ic laptop motherboard 12V cooler MOTOR TSOP6 SOT23 package s1 sot363 voltage controller PMN23UN PMN34LN PMN34UN PMN40LN
Contextual Info: NXP 30-, 20-, and 12-V N- and P-channel MOSFETs PMNseries in TSOP6 packages Ultra-small µTrenchMOS MOSFETs in a TSOP6 package and 94% lower RDS ON than SOT23 Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny TSOP6 packages, deliver an on resistance

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: AN11156 Using Power MOSFET Zth Curves Rev. 1 — 28 September 2012 Application note Document information Info Content Keywords Power MOSFET, Zth curves, Junction temperature, Single shot, Rectangular pulse, Composite waveform, Pulse burst, Zth j-mb , Superimposition, Thermal impedance

Contextual Info: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery

AN11261

Abstract: AN11156
Contextual Info: AN11261 Using RC Thermal Models Rev. 2 — 19 May 2014 Application note Document information Info Content Keywords RC thermal, SPICE, Models, Zth, Rth, MOSFET, Power Abstract Analysis of the thermal performance of power semiconductors is necessary to efficiently and safely design any system utilizing such

photo interrupter module

Abstract: wiring circuit stepper motor "Photo Interrupter" Application Note mosfet discrete totem pole CIRCUIT PCA9539 principle stepper motor unipolar stepper motor programming in c 7.5 stepper motor PCA9538 optical interrupter darlington
Contextual Info: AN10814 Driving stepper motors using NXP I2C-bus GPIO expanders Rev. 01 — 11 September 2009 Application note Document information Info Content Keywords stepper, stepper motor, GPIO, push-pull, quasi-bidirectional, MOSFET, optical interrupter, Fast-mode Plus, Fm+, I2C-bus

2N7002BK

Abstract: 771-2N7002BK215 trench relay
Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

tea1795

Abstract: BSS123 NXP application note tea1761 TEA1795T 2N7002 BSN20 BSS123 VC10 2N7002 NXP AN10954
Contextual Info: AN10954 GreenChip SR TEA1795T dual synchronous rectification driver IC Rev. 1 — 14 December 2010 Application note Document information Info Content Keywords TEA1795T, MOSFET, driver IC, synchronous, rectifier, resonant, converter Abstract The TEA1795T is a dual synchronous rectifier driver IC for a resonant

smd code marking WV

Abstract: nxp p mosfet 2N7002P
Contextual Info: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002BKS

Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
Contextual Info: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002PW

Abstract: x8 sot323
Contextual Info: 2N7002PW 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

MARKING SMD x9

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PT

Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BYC8600

Contextual Info: TO -22 AC BYC8-600 Hyperfast power diode 6 May 2013 Product data sheet 1. General description Hyperfast power diode in a SOD59 2-lead TO-220AC plastic package. 2. Features and benefits • • Low reverse recovery current and low thermal resistance Reduces switching losses in associated MOSFET

smd transistor marking zg

Abstract: transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: smd code marking WV
Contextual Info: BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using