O2908 Search Results

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

safety solar traffic light

Contextual Info: Ordering number : ENA1301 AM-5815 Package Dimensions unit : mm Light Receiving Side Overcoat Side 8.7 (1.05) Effective Area ±0.2 ±0.3 10.8 Electrode (6.35) Electrode (1.05) Glass Juts(4 Corners) Width : 0.6MAX, Length : 6.0MAX (2.65) 31.8 ±0.3 Note: Glass Substrate Thickness

A1297

Contextual Info: Ordering number : ENA1297 AM-1820 Package Dimensions unit : mm Light Receiving Side Overcoat Side 1.1 ±0.1 (0.5) Overcoat ±0.2 ±0.3 Electrode (0.5) 26.0 Electrode 25.0 Effective Area 1.3MAX Glass 43.0 ±0.3 Note: Glass Substrate Thickness Module Thickness

HK-12S120-1010

Abstract: kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011
Contextual Info: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).

A1299

Abstract: 107ma
Contextual Info: 注文コード No. N A 1 2 9 9 AM-5813 外形図 unit:mm Light Receiving Side Overcoat Side Electrode ±0.2 ±0.3 60.2 56.0 ±0.3 58.1 Effective Area (1.05) Glass Juts(4 Corners) Width : 0.6MAX, Length : 6.0MAX Electrode ±0.3 (1.05) 3.1 41.2 注)ガラス基板厚

A1074

Abstract: CE 2711 ITR07991 2SC5245A ITR07984 ITR07986 ITR07987 ITR07988 ITR07990
Contextual Info: 2SC5245A 注文コード No. N A 1 0 7 4 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5245A UHF ~ S バンド低雑音増幅 , 発振用 特長 ・低雑音である：NF=0.9dB typ（f=1GHz）

A1303

Contextual Info: 注文コード No. N A 1 3 0 3 AM-8702 外形図 unit:mm Light Receiving Side Overcoat Side ±0.2 ±0.3 ±0.3 (1.05) 5.35 39.2 Effective Area Electrode 41.3 ±0.3 34.6 Electrode (1.05) Glass Juts(4 Corners) Width : 0.6MAX, Length : 6.0MAX 57.7 注)ガラス基板厚

A1060

Abstract: A8AI A1060-10 A10602 R312
Contextual Info: TN8D41A 注文コード No. N A 1 0 6 0 三洋半導体データシート N TN8D41A Excllent-Performance Power & RF Device 他励型降圧スイッチングレギュレータ 5V 出力 特長 ・高効率(オン抵抗 80mΩ, 縦型 P-ch パワ− MOSFET)。

transistor A1111

Abstract: IC-7404 A1111
Contextual Info: Ordering number : ENA1111A 55GN01CA RF Transistor http://onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single CP Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

Contextual Info: 55GN01CA Ordering number : ENA1111A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz

Contextual Info: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package

165-62

Abstract: 15GN03C transistor a1106 17089
Contextual Info: 15GN03CA Ordering number : ENA1106A SANYO Semiconductors DATA SHEET 15GN03CA NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications Applications • VHF, RF, MIXER, OSC, IF amplifier Features • • High cutoff frequency : fT=1.5GHz typ

A1111

Contextual Info: 55GN01CA Ordering number : ENA1111 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz .

a1295

Abstract: vs901sl DIODE marking ED IEC61000-4-4
Contextual Info: VS901SL Ordering number : ENA1295 SANYO Semiconductors DATA SHEET VS901SL Low Capacitance TVS Diode General Purpose Protection Device Applications • • • • • USB 2.0. Mobile communication. STB, MP3, DVD, DSC. LCD, camera. Notebooks and desktop computers, peripherals.

LB1909M

Abstract: motor forward reverse diagram forward reverse motor diagram LA1909M step -syn sanyo motor MFP10S
Contextual Info: Ordering number : ENA1338 Monolithic Digital IC LA1909M Stepping Motor Driver IC Overview The LB1909M is a 2-channel low saturation voltage forward/reverse motor driver that can operate on a wide supply voltage range 2.5V to 16V . The IC is ideal for use in 2-phase excitation drive of general-purpose 2-phase bipolar stepping

A1074

Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
Contextual Info: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain

TLE 9180

Contextual Info: Ordering number : ENA1108A 15GN03MA RF Transistor http://onsemi.com 10V, 70mA, fT=1.5GHz, NPN Single MCP Applications • VHF, RF, MIXER, OSC, IF amplifier Features • • • High cut-off frequency : fT=1.5GHz typ High gain : ⏐S21e⏐2=13dB typ f=0.4GHz

A1302

Contextual Info: 注文コード No. N A 1 3 0 2 AM-8701 外形図 unit:mm Light Receiving Side Overcoat Side 53.0 Effective Area ±0.2 ±0.3 55.1 Electrode 48.4 ±0.3 (1.05) Glass Juts(4 Corners) Width : 0.6MAX, Length : 6.0MAX Electrode ±0.3 (1.05) 5.35 57.7 注)ガラス基板厚

AM3033

Abstract: A1309 AM-30-33
Contextual Info: 注文コード No. N A 1 3 0 9 AM-30-33 外形図 unit:mm Light Receiving Side Overcoat Side Overcoat Electrode ±0.2 ( ) MARK 0.7 ±0.1 1.65 ±0.1 1.65 Glass 0.4 + 0.5 3.0 − 0.1 2.2 1.8 ±0.1 ±0.1 0.4 Effective Area 0.6 ±0.2 Electrode ±0.2 3.1 0.5

A1298

Contextual Info: 注文コード No. N A 1 2 9 8 AM-5308 外形図 unit:mm Light Receiving Side Overcoat Side ±0.3 ±0.2 44.8 Effective Area Electrode ±0.3 47.2 3.1 23.6 ±0.3 (1.2) Glass Juts(4 Corners) Width : 0.6MAX, Length : 6.0MAX (1.2) Electrode 50.1 注)ガラス基板厚

8873 IC

Abstract: ic 8873 A1109 osc 59-22 ta 8873 IC 7429 ic 17358 A11096
Contextual Info: 15GN03SA 注文コード No. N A 1 1 0 9 三洋半導体データシート N 15GN03SA NPN エピタキシァルプレーナ 型シリコントランジスタ VHF高周波増幅用 用途 ・VHF, RF, MIXER, OSC, IF 増幅用。 特長 ・しゃ断周波数が高い : fT=1.5GHz typ。

SCK 085

Abstract: USP6947325 1800H1FFFH
Contextual Info: 注文コード No.N A 1 3 4 2 LE25LB643 Serial SPI EEPROM SPI Bus (64Kbit) 概要 LE25LB643 はシリアルペリフェラルインターフェース(SPI)対応の 64Kbit EEPROM である。本製品は 三洋 CMOS EEPROM 技術を採用することにより、高速動作、高信頼性を実現している。また、インター

MFP10S

Abstract: LB1909M IC350 A1338 A1383
Contextual Info: 注文コード No.N A 1 3 3 8 モノリシックデジタル集積回路 LB1909M ステッピングモータドライバIC 概要 入り ICであり冷蔵庫用ダンパをはじめとする汎用の2相バイポーラステッピングモータの2相励磁駆動