OC 140 NPN TRANSISTOR Search Results

2sd1047

Abstract: transistor 2sd1047 2SD1047 transistor
Contextual Info: 2SD1047 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured

2STC4468

Abstract: 2STA1695 JESD97
Contextual Info: 2STC4468 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Complementary to 2STA1695 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 Application ■ 2 1 Audio power amplifier TO-3P Description

2STW1695

Abstract: 2STW4468 JESD97 st 247 STMicroelectronics code date marking
Contextual Info: 2STW4468 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-247 Audio power amplifier

Contextual Info: 2STW4468 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o r P e Applications

ASI10655

Abstract: TVV007
Contextual Info: TVV007 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI TVV007 is Designed for 2x ØN FULL R D FEATURES: • • • Omnigold Metalization System B G 60 V VCE 35 V PDISS 140 W @ TC = 25 OC -65 C to +200 C TJ inches / mm

ASI10631

Abstract: MLN2027SS
Contextual Info: MLN2027SS NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The ASI MLN2027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 OC

ASI10656

Abstract: TVV010
Contextual Info: TVV010 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: The ASI TVV010 is Designed for .112x45° A B D FEATURES: S • • • Omnigold Metalization System ØC S G D H I J MAXIMUM RATINGS F IC 10 A VCB 60 V VCE 35 V E PDISS 140 W @ TC = 25 OC

42fg

Abstract: ASI10750 VMB150-28
Contextual Info: VMB150-28 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI VMB150-28 is Designed for 2x ØN FULL R D FEATURES: • • • Omnigold Metalization System B G 60 V VCE 35 V PDISS 140 W @ TC = 25 OC O TJ -65 C to +200 C TSTG

TRANSISTOR TC 137

Abstract: ASI10691
Contextual Info: UML3 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI UML3 is Designed for 45° B FEATURES: • • • Omnigold Metalization System C D J E I F G MAXIMUM RATINGS H K 10 A IC 60 V VCB 35 V VCE PDISS 140 W @ TC = 25 OC O

ASI10587

Abstract: FMB075
Contextual Info: FMB075 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The ASI FMB075 is Designed for .112x45° L A Ø.125 NOM. FULL R FEATURES: C • • • Omnigold Metalization System B E H D G F I J MAXIMUM RATINGS IC 10 A VCB 60 V 140 W @ TC = 25 OC

TRANSISTOR TC 137

Abstract: ASI10627 MLN1033S
Contextual Info: MLN1033S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI MLN1033S is Designed for 45° D S S B FEATURES: G • • • Omnigold Metalization System C D J I E F G MAXIMUM RATINGS H K 10 A IC 60 V VCB 35 V VCE PDISS 140 W @ TC = 25 OC

FMBT5550

Abstract: oc 140 npn transistor
Contextual Info: Formosa MS High Voltage NPN Epitaxial Planar Transistor FMBT5550 / FMBT5551 List List. 1 Package outline. 2

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

MD3735

Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b72S4 QCHSMSb MOTOROLA M SEM ICONDUCTOR m h h h m ^ ■ MOTb T - Ì 0 2 5 h TECHNICAL DATA MD3735 M D3735F Discrete M ilita ry Products (Duals) NPN Silicon Dual/Quad Small-Signal Transistors MHQ3735 MQ3735 /////I/ (Quads)

marking wg

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC143ZKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.

CHDTC123YEPT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC123YEPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-75/SOT-416 * High current gain.

CHDTC363EUGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC363EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-70/SOT-323 * High current gain.

CHDTC113ZUGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC113ZUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-70/SOT-323 * High current gain.

ZUA 08

Abstract: CHDTC113ZU CHDTC113ZUPT
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC113ZUPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-70/SOT-323 * High current gain.

marking wg

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC143ZEPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-75/SOT-416 * High current gain.

CHDTC363EKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC363EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-23 * High current gain.

CHDTC123YEGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC123YEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-75/SOT-416 * High current gain.

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC123YKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC363EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-23 * High current gain.