Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    OCT14 Search Results

    SF Impression Pixel

    OCT14 Price and Stock

    BPM Microsystems Inc LSOCT14EA

    LSOCT14EA Socket Card for BPM Pr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LSOCT14EA 1
    • 1 $79.47
    • 10 $79.47
    • 100 $79.47
    • 1000 $79.47
    • 10000 $79.47
    		Buy Now

    OCT14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic power 22E

    Abstract: 3904U power 22E IC 1N916
    Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)


    Original     		PDF 3904U 100mA 3906U VPW09197 EHA07178 SC-74 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904U power 22E IC 1N916

    SCT-595

    Abstract: VPW05980
    Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings


    Original     		PDF VPW05980 SCT-595 EHP00821 EHP00819 EHP00820 EHP00815 Oct-14-1999 SCT-595 VPW05980

    MARKING 93

    Abstract: VPS05163 3CTA
    Text: PZTA 92 PNP Silicon High Voltage Transistor  High breakdown voltage 4  Low collector-emitter saturation voltage  Complementary type: PZTA 42 NPN 3 2 1 Type Marking PZTA 92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings


    Original     		PDF VPS05163 OT-223 EHP00346 EHP00735 Oct-14-1999 EHP00736 EHP00737 MARKING 93 VPS05163 3CTA

    NPN S2D

    Abstract: No abstract text available
    Text: SMBTA 92 PNP Silicon High Voltage Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN 2 1 Type Marking SMBTA 92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 OT-23 Oct-14-1999 EHP00881 EHP00882 EHP00883 NPN S2D

    Untitled

    Abstract: No abstract text available
    Text: SMBTA 13, SMBTA 14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA 13 s1M 1=B 2=E 3=C SOT-23 SMBTA 14 s1N 1=B 2=E 3=C SOT-23 VPS05161 Package


    Original     		PDF OT-23 VPS05161 EHP00826 EHP00827 EHP00828 EHP00829 Oct-14-1999

    smbt5086

    Abstract: No abstract text available
    Text: SMBT 5087 PNP Silicon Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz 2 1 Type Marking SMBT 5087 s2Q Pin Configuration 1=B 2=E VPS05161 Package 3=C


    Original     		PDF VPS05161 OT-23 120Hz EHP00793 EHP00794 10kHz EHP00795 EHP00796 Oct-14-1999 smbt5086

    NC7010

    Abstract: No abstract text available
    Text: BSM 10 GD 120 DN2 E3224 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 IC Package Ordering Code 1200V 15A ECONOPACK 2


    Original     		PDF E3224 GD120DN2E3224 NC7010

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF 100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SMBTA 56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06 NPN 2 1 Type Marking SMBTA 56 s2G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter


    Original     		PDF VPS05161 OT-23 EHP00849 EHP00850 EHP00851 EHP00852 Oct-14-1999

    VPS05163

    Abstract: 43 SOT223 MARKING
    Text: PZTA 42, PZTA 43 NPN Silicon High-Voltage Transistors • High breakdown voltage 4 • Low collector-emitter saturation voltage • Complementary types; PZTA 92, PZTA 93 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package PZTA 42 PZTA 42 1=B 2=C 3=E


    Original     		PDF VPS05163 OT-223 EHP00320 EHP00724 EHP00725 EHP00726 Oct-14-1999 VPS05163 43 SOT223 MARKING

    TRANSISTOR S1d

    Abstract: SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595


    Original     		PDF VPW05980 SCT-595 Oct-14-1999 EHP00842 EHP00843 TRANSISTOR S1d SCT-595

    h11e

    Abstract: SMBT3904UPN
    Text: SMBT 3904U PN NPN/PNP Silicon Switching Transistor Array  High current gain 4 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177


    Original     		PDF 3904U VPW09197 EHA07177 SC-74 EHP00763 EHP00764 Oct-14-1999 EHP00757 h11e SMBT3904UPN

    TRANSISTOR S1d

    Abstract: s1D marking, datasheet sot-23
    Text: SMBTA 42 NPN Silicon Transistor for High Voltages 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP 2 1 Type Marking SMBTA 42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 OT-23 Oct-14-1999 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d s1D marking, datasheet sot-23

    ic power 22E

    Abstract: 3904S SMBT 3904S 1N916 VPS05604
    Text: SMBT 3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT 3906S (PNP)


    Original     		PDF 3904S 100mA 3906S VPS05604 EHA07178 OT-363 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904S SMBT 3904S 1N916 VPS05604

    MARKING S1G

    Abstract: No abstract text available
    Text: SMBTA 06 NPN Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 PNP 2 1 Type Marking SMBTA 06 s1G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter


    Original     		PDF VPS05161 OT-23 EHP00818 EHP00819 EHP00820 EHP00821 Oct-14-1999 MARKING S1G

    EHP00364

    Abstract: No abstract text available
    Text: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol


    Original     		PDF OT-23 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Oct-14-1999 EHP00364

    VPW05980

    Abstract: No abstract text available
    Text: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings


    Original     		PDF VPW05980 SCT-595 Package10 Oct-14-1999 EHP00852 EHP00850 EHP00851 EHP00846 VPW05980

    V23990-k438

    Abstract: No abstract text available
    Text: Power Modules New MiniSKiiP Modules with Mitsubishi’s Latest IGBT 6.1 Product name ® MiniSKiiP PIM 3 16 x 82 x 59 mm Vincotech has extended its range of MiniSKiiP® PIM 3 and MiniSKiiP® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering


    Original     		PDF 20-to-70 37NAB12T4V1 38NAB12T4V1 V23990-K438-F60-PM 37AC12T4V1 V23990-K439-F60-PM 38AC12T4V1 V23990-K430-F60-PM 39AC12T4V1 Oct-14 V23990-k438

    ic power 22E

    Abstract: 1N916
    Text: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)


    Original     		PDF 3906U 100mA 3904U VPW09197 EHA07175 SC-74 EHP00773 EHP00764 Oct-14-1999 ic power 22E 1N916

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
    Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF VPS05161 OT-23 2222/A EHP00744 EHP00745 Oct-14-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Text: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF 100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E

    Untitled

    Abstract: No abstract text available
    Text: SMBD 7000 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD 7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF VPS05161 EHA07005 OT-23 EHB00137 EHB00138 Oct-14-1999 EHB00139

    DIODE 914

    Abstract: 914 DIODE
    Text: SMBD 914 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking SMBD 914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage


    Original     		PDF VPS05161 EHA07002 OT-23 40m25V EHB00112 EHB00113 Oct-14-1999 EHB00114 DIODE 914 914 DIODE

    P07D03LV

    Abstract: NIKO-SEM
    Text: P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS


    Original     		PDF P07D03LV OCT-14-2002 P07D03LV NIKO-SEM