OD S2A Search Results

Contextual Info: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75321D

Abstract: d3s diode DIODE D3S 90 430E1
Contextual Info: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

TSOP-6 .54

Abstract: AN7254 AN7260 ITF87012SVT SC-95 TB370
Contextual Info: ITF87012SVT interrii January. m i Data Sheet PRELIMINARY 6A, 20 V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET File Number 4810.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.035i2, VGs = 4.5V Packaging ‘ rDS(ON) = 0.038i2, VGs = 4.0V TSOP-6

DFRC

Abstract: 86130 2A1050 AN7254 AN7260 ITF86130SK8T MS-012AA TB370 bv164 RS391
Contextual Info: in t e ITF86130SK8T r r ii J a n u a ry . Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET File Num ber 4798.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0 .0 0 7 8 a VGS= 10V ‘ rDS(ON) = 0 .0 1 0 a VGs = 4.5V

65e9

Abstract: TB370 AN7254 AN7260 ITF86116SQT
Contextual Info: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode

Contextual Info: RFK70N06 HARRIS S E M I C O N D U C T O R 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET June 1997 Features Description • 70A, 60V The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI integrated circuits gives

76639p

Abstract: AN9321 AN9322 HUF76639P3 HUF76639S3S HUF76639S3ST TB334 76639S 92e2 OT 180
Contextual Info: HUF76639P3, HUF76639S3S interrii Data Sheet November 1999 File Num ber 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SO U R CE DRAIN FLA N G E • Ultra Low On-Resistance ‘ rDS(ON) = 0.026i2, VGS = 10V

76145p

Contextual Info: HUF76145P3, HUF76145S3S Semiconductor January 1999 Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs t These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Li ION spice model charge

Abstract: AN7254 AN7260 ITF87008DQT TB370 67e4
Contextual Info: ITF87008DQT interrii mi F e b u a ry . Data Sheet 7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET File Number 4814.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.023i2, VGS = 4.5V Packaging ‘ rDS(ON) = 0.024i2, VGS = 4.0V TSSOP-8

Contextual Info: HUF76645P3, HUF76645S3S Semiconductor July 1999 Data Sheet File Num ber 4716.2 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • U ltra Low O n-R e sistan ce • rDS ON = 0.014£i, v g s = 1°v

FT3055LE

Contextual Info: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum

diode t25 4 j6

Abstract: SCHEMATIC VGA serial port to 4 pin usb 14 pin vga to rca cable schematic SCHEMATIC USB to VGA vga to rca schematic schematic vga switch smd diode s5d SCHEMATIC VGA board smd diode s1B S5B smd
Contextual Info: Evaluation Board for ADG790 EVAL-ADG790 the user to connect various signal sources USB/VGA/S-Video to the switch. All signals applied to the switch can be monitored using the test points (T1 to T32) on the board. See the ADG790 Switch Pins, Test Points, and Connectors section for a detailed

Contextual Info: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

Contextual Info: ASSESS? RFP25N06, RF1S25N06, RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

Contextual Info: TO SH IBA TENTATIVE TCD2900C TOSHIBA CCD IMAGE SENSOR CCD Charge Coupled Device TCD2900C The TCD2900C is a high sensitive and low dark current 10500-elements linear image sensor. The sensor can be used for image scanner. The device contains a row of 10400 x 3 photodiodes,

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Semiconductor Data Sheet July 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFETs File Number 2268.5 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S e m ico n d ucto r Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and

Contextual Info: S-N 0 S SYSTEMS INC IDE D | 7^32^0^ 00007SÖ S I PF355-01 CCD LINE SENSOR # 5 ,0 0 0 Bits Photo-element •7 i« m Pitch •DESCRIPTION The SEA7551H is a 5,000 bits CCD line sensor which has a CCD analog shift register for reading image signals. It is possible to read a manuscript of A3 size 29.6cm x 42cm by 16 line/mm.

N9321

Abstract: F7613 TA7613
Contextual Info: ? *3 2 £ HUF76137P3, HUF76137S3, HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 | Features Description w • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the

D15P05

Contextual Info: * f* 3 2 S RFD15P05, RFD15P05SM, RFP15P05 -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A,-50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

TPG1212

Abstract: PIN diode Pspice model
Contextual Info: RF3V49092, RF3S49092, RF3S49092SM S e m iconductor November 1998 Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFETs These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

Contextual Info: RF1K49093 HARRIS S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 2.5 A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­

Contextual Info: ASSESS? RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022É1, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A,20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

Contextual Info: Low Voltage, CMOS Multimedia Switch ADG790 FEATURES Single-chip audio/video/data switching solution Wide bandwidth section Rail-to-rail signal switching capability Compliant with full speed USB 2.0 signaling 3.6 V p-p Compliant with high speed USB 2.0 signaling (400 mV p-p)