RFD16N05 Search Results

TO-252AA fairchild

Abstract: RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334
Contextual Info: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

TH 2267

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

Contextual Info: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

38E-3

Abstract: JEDEC TO-251AA RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334
Contextual Info: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

Contextual Info: RFD16N05L, RFD16N05LSM S em iconductor A p ril 1999 D ata S h eet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI

Contextual Info: interrii RFD16N05, RFD16N05SM D ata S h e e t 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

TA09871

Abstract: RFD16N05LSM9A
Contextual Info: RFD16N05L, RFD16N05LSM i n t e is gI D a ta S h e e t 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI

304E3

Abstract: rfd16n05sm9a 66E-6
Contextual Info: RFD16N05, RFD16N05SM HARRIS S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V • r DS O N = 0-047U • Temperature Compensating PSPICE Model ORAIN (FLANGE)

th 2267.1

Abstract: 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1
Contextual Info: h a f r r RFD16N05 RFD16N05SM i s May 1992 N -Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Packages Features T0 -251 A A • 16A, 50V TOP VIEW • r DS(on) = 0.047 i i >SOURCE • UIS SOA Rating Curve (Single Pulse) DRAIN TAB” • SOA is P o w er-D issipation Lim ited

Contextual Info: RFD16N05L, RFD16N05LSM Data Sheet Title FD1 05L D16 5LS bt A, V, 47 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA April 1999 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel logic level power MOSFETs

Contextual Info: RFD16N05, RFD16N05SM Data Sheet Title FD1 05, D16 5S bt A, V, 47 m, anwer OSTs utho eyrds ter- July 1999 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Features The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process.

Contextual Info: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

f16n05

Abstract: RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 RFD16N05 RFD16N05SM
Contextual Info: RFD16N05, RFD16N05SM S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model

Contextual Info: RFD16N05LSM September 2013 Data Sheet N-Channel Logic Level Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI

D16N05

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

RFD16N05

Abstract: RFD16N05SM
Contextual Info: Power MegaFETs - RFD16N05, RFD16N05SM File Number 2267 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 16 A , 5 0 V rdsion) = 0 .0 4 7 O TERMINAL DIAGRAM Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited

Contextual Info: RFD16N05SM September 2013 Data Sheet N-Channel Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

f16n05

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

RFD16N05LSM

Abstract: D16N05 D16N05L 200U RFD16N05L
Contextual Info: Logic-Level Power MOSFETs File Number 2269 RFD16N05L, RFD16N05LSM N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 16 A , 50 V l*ds(on) " 0 .0 4 7 f i TERMINAL DIAGRAM Features: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits

Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

Contextual Info: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

1N5994B

Contextual Info: LT1161 Quad Protected High-Side MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from – 15V to 60V Supply Transients Fully Enhances N-Channel MOSFET Switches Individual Short-Circuit Protection