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    OF DIODE Search Results

    OF DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    OF DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Diode T148

    Abstract: TE-17
    Contextual Info: Table of characteristics Diodes Table of characteristics Small signal diodes !Switching diodes ROHM has an overwhelming production capability of high reliable switching diodes in the industry. The superior antisurge characteristics of the UMD2 package in spite of the small size is noteworthy. A wide variety of diode arrays


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    1SS400 DAN222 DAP222 DA221 DA121 1SS355 DAN202U DAP202U DA204U DA114 Diode T148 TE-17 PDF

    MA2810

    Abstract: MA1050 ma4810 MA2830 MA4820 MA2820 MA1040 2SK2060 MJ2400 S20LC20U
    Contextual Info: A VARIETY OF SEMICONDUCTORS WHICH RESPOND TO NEEDS OF LIGHTER MK Series AUTOMATIC VOLTAGE SELECTOR: The MK series meets the needs of full range power supplies. DIODES FOR PRIMARY RECTIFICATION: A family of high quality products with a wide range of features, that meet the needs of changing applications.


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    240VAC. D10LC20U D10L20U D10SC9M D8LC20U S20LC20U D20LC20U S20SC9M D20SC9M MA2810 MA1050 ma4810 MA2830 MA4820 MA2820 MA1040 2SK2060 MJ2400 PDF

    TR8025

    Abstract: RB751V-40 TE-17 1SR35-400A T-82 1SR159-200TE25 1SS376 te-17 ROHM udz te-17 RB063L-30TE25 1SS133 T-77 RB751S-40TE61 RB441Q-40
    Contextual Info: Table of characteristics Diodes Table of characteristics Small signal diodes !Switching diodes ROHM has an overwhelming production capability of high reliable switching diodes in the industry. The superior antisurge characteristics of the UMD2 package in spite of the small size is noteworthy. A wide variety of diode arrays


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    1SS400 DAN222 UMZ12N TR8025 RB751V-40 TE-17 1SR35-400A T-82 1SR159-200TE25 1SS376 te-17 ROHM udz te-17 RB063L-30TE25 1SS133 T-77 RB751S-40TE61 RB441Q-40 PDF

    DA108S1

    Abstract: marking code da1 DA108S DA112S DA112S1
    Contextual Info: DA108S1 DA112S1  Application Specific Discretes A.S.D.TM DIODE ARRAY APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning. SO8 FUNCTIONAL DIAGRAM : DA108S1 FEATURES ARRAY OF 8 OR 12 DIODES


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    DA108S1 DA112S1 IEC1000-4-22level DA108S1 marking code da1 DA108S DA112S DA112S1 PDF

    diode.18

    Abstract: STMicroelectronics DIODE marking code DA108S1 marking code stmicroelectronics DA108S DA112S DA112S1 IEC1000-4-22
    Contextual Info: DA108S1 DA112S1  Application Specific Discretes A.S.D.TM DIODE ARRAY APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning. FEATURES • ■ ■ ARRAY OF 8 OR 12 DIODES LOW INPUT CAPACITANCE


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    DA108S1 DA112S1 IEC1000-4-22 diode.18 STMicroelectronics DIODE marking code DA108S1 marking code stmicroelectronics DA108S DA112S DA112S1 PDF

    DA108S1

    Abstract: DA112S DA108S DA112S1 IEC1000-4-22 marking code da1 STMicroelectronics DIODE marking code
    Contextual Info: DA108S1 DA112S1 Application Specific Discretes A.S.D.TM DIODE ARRAY APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning. FEATURES • ■ ■ ARRAY OF 8 OR 12 DIODES LOW INPUT CAPACITANCE


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    DA108S1 DA112S1 IEC1000-4-22 DA108S1 DA112S DA108S DA112S1 marking code da1 STMicroelectronics DIODE marking code PDF

    DA108S1

    Abstract: REF2 DA108S DA108S1RL DA112S DA112S1 DA112S1RL JESD97 automotive power protection
    Contextual Info: DA108S1 DA112S1 ASD Application Specific Devices Diode Array Main applications • Protection of logic side of ISDN S-interface ■ Protection of I/O lines of microcontroller ■ Signal conditioning Features ■ Array of 8 or 12 diodes ■ Low input capacitance


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    DA108S1 DA112S1 DA11n DA108S1 REF2 DA108S DA108S1RL DA112S DA112S1 DA112S1RL JESD97 automotive power protection PDF

    IXAN0039

    Abstract: New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications Schottky diode TO220 diode schottky 600v MOSFET and parallel Schottky diode schottky diode 100A D-86161 300V dc dc boost converter Diode schottky 29 schematic with a schottky diode
    Contextual Info: IXAN0039 A new generation of 600V GaAs Schottky diodes for high power density PFC applications Stefan Steinhoff1, Manfred Reddig2 and Steffen Knigge3 1 IXYS Berlin GmbH, Max-Planck-Strasse 5, D-12489 Berlin, Germany; s.steinhoff@ixys.de 2 Institute of Power Electronics, Dept. of Electrical Engineering of University of Applied Sciences,


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    IXAN0039 D-12489 D-86161 IXAN0039 New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications Schottky diode TO220 diode schottky 600v MOSFET and parallel Schottky diode schottky diode 100A 300V dc dc boost converter Diode schottky 29 schematic with a schottky diode PDF

    Contextual Info: GP2Y0A710K0F GP2Y0A710K0F •Description GP2Y0A710K0F is a distance measuring sensor unit, composed of an integrated combination of PSD position sensitive detector , IRED (infrared emitting diode) and signal processing circuit. The variety of the reflectivity of the object, the


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    GP2Y0A710K0F GP2Y0A710K0F 2002/95/EC) E4-A00301EN PDF

    thyristor lifetime

    Abstract: all type of thyristor Discrete Thyristor Chip thyristor modules
    Contextual Info: Thyristor / Diode Modules One of the essential advantages of power sem iconductor modules com pared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRUS tested . This makes possible the mountdown of any number of the same or diffe­


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    Sharp Semiconductor Lasers

    Abstract: gaseous lasers cladding mode strip
    Contextual Info: Operating Principles of Laser Diodes x x x x “LASER” IS an acronym for “Light Amplification by Stimulated Emission of Radiation. ” A laser is a device which uses one of a large number of solid, liquid, or gaseous materials to generate light and ampllfy it through the process of


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    ESJC15

    Abstract: ESJC15 Diode ESJC16 esjc ESJC37 ESJC13 ESJC03 ESJC04 ESJC07 ESJC30
    Contextual Info: Abolishment of High Voltage Diode: model “ESJC series’’ Our High Voltage Diode, “ESJC series” has been had your custom for a long period of time. However, it became difficult to continue the stable production due to extreme small of volume of the materials and superannuation of equipment.


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    ESJC03 ESJC04 ESJC07 ESJC13 ESJC15 ESJC16 ESJC30 ESJC32 ESJC34 ESJC15 Diode esjc ESJC37 PDF

    motorola 1w zener diodes

    Abstract: motorola .5w zener diodes voltage rectifier zener diode motorola Double Zener diode zener diode specification table transistor power rating 5w ALL ZENER AN784 diode for clippers 1N4728
    Contextual Info: Chapter 11 AN784 — TRANSIENT POWER CAPABILITY OF ZENER DIODES INTRODUCTION Because of the sensitivity of semiconductor components to voltage transients in excess of their ratings, circuits are often designed to inhibit voltage surges in order to protect


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    AN784 1N6267 1N6287 motorola 1w zener diodes motorola .5w zener diodes voltage rectifier zener diode motorola Double Zener diode zener diode specification table transistor power rating 5w ALL ZENER diode for clippers 1N4728 PDF

    GTO triac

    Contextual Info: 2. MAXIMUM RATINGS 2.1 Difinition of Maximum Ratings The maximum permissible value of current to be supplied to, voltage applied to or reverse power dissipation, etc., of; diodes, rectifiers, thyristors, triacs, etc., is defined as the maximum rating. In designing semiconductor devices, full recognition of the maximum ratings is of prime importance for


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    -217A) GTO triac PDF

    thyristor lifetime

    Contextual Info: Thyristor / Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of


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    PDF

    thyristor lifetime

    Contextual Info: Thyristor / Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of


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    PDF

    M705-GRN360-K2V

    Abstract: M705-GRN360-K2-V solder paste M705-GRN360-K2-V M705-GRN-360-K2-V M705-GRN360 1SS376 1SS355 1SS380 750H ST-100S
    Contextual Info: Soldering conditions Surface mounted glass Diodes Condition of soldering for Surface mounted glass Diodes Lead free paste Sn-3Ag-0.5Cu version CONTENTS Recommended condition of reflow soldering 2/5 Recommended condition of flow soldering 2/5 Condition of hand soldering


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    IGBT parallel

    Abstract: advantage and disadvantage of igbt Measurement of stray inductance for IGBT Measurement of the circuit stray inductance L eupec igbt driver AN2004-06 parallel circuits eupec module igbt IGBT3 infineon EUPEC
    Contextual Info: Application Note Date: 27.09.2004 AN-Number: AN2004-06 Page 1 Department: SM-AE Paralleling of EconoPACKTM+ 1. EconoPACKTM+ Design 2. Paralleling of IGBT3 and EmCon HE diodes 3. Methods of paralleling EconoPACKTM+ 4. Dynamic and static current sharing of parallel circuits


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    AN2004-06 D-59581 IGBT parallel advantage and disadvantage of igbt Measurement of stray inductance for IGBT Measurement of the circuit stray inductance L eupec igbt driver AN2004-06 parallel circuits eupec module igbt IGBT3 infineon EUPEC PDF

    M705-GRN360

    Abstract: M705-GRN360-K2V M705-GRN360-K2-V water level control circuit diagram water level controller circuit diagram solder paste M705-GRN360-K2-V 1SS376 M705 M705 solder paste C 245 B
    Contextual Info: Soldering conditions Surface mounted glass Diodes Condition of soldering for Surface mounted glass Diodes Lead free paste Sn-3Ag-0.5Cu version CONTENTS Recommended condition of reflow soldering 2/5 Recommended condition of flow soldering 2/5 Condition of hand soldering


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    PDF

    M705-GRN360-K2V

    Abstract: M705-GRN360 solder paste M705-GRN360-K2-V TOSHIBA GLASS MOLD 1SS376 3pin surface mount transistor M705 water level control circuit diagram M705-GRN360-K2-V C 245 B
    Contextual Info: Soldering conditions Surface mounted mold Diodes Condition of soldering for Surface mounted mold Diodes Lead free paste Sn-3Ag-0.5Cu version CONTENTS Recommended condition of reflow soldering 2/5 Recommended condition of flow soldering 2/5 Condition of hand soldering


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    M705-GRN360-K2V

    Abstract: M705-GRN360-K2-V M705-GRN-360-K2-V 1SS376 M705-GRN360 1SS355 UMD2 ROHM 1SS355 1SS380 750H ST-100S
    Contextual Info: Soldering conditions Surface mounted mold Diodes Condition of soldering for Surface mounted mold Diodes Lead free paste Sn-3Ag-0.5Cu version CONTENTS Recommended condition of reflow soldering 2/5 Recommended condition of flow soldering 2/5 Condition of hand soldering


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    thyristor lifetime

    Contextual Info: / Thyristor Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of


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    R2j diode

    Abstract: Zener Diode SOD-323 smd code UM r2u zener General Semiconductor diodes 89a bly diode zener 8v5 melf zener diode smd ayz smd
    Contextual Info: Technical Information Index of Sym bols Q ot C apacitance, diode capacitance CL C apacitance of load capacitor f Frequency fin Frequency of input voltage fmax Max. frequency of voltage to be rectified fP Pulse frequency Series resonance frequency Pp Pulse pow er


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    OD-323 12-mm R2j diode Zener Diode SOD-323 smd code UM r2u zener General Semiconductor diodes 89a bly diode zener 8v5 melf zener diode smd ayz smd PDF

    CRD Diode

    Abstract: Current Regulative Diode of led resistor crD
    Contextual Info: Devices stabilizing performance of LED E series CRD : Current regulative diode L series S series CRD as device stabilizing performance of LED, supplies regulated current even when circuit voltage fluctuates. Brightness of LED is varied with even small fluctuation of voltage, CRD


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    AC100V AC220V CRD Diode Current Regulative Diode of led resistor crD PDF