ESJC30 Search Results

MARK 7 DIODE

Abstract: saia ESJC30 ESJC30-05 ESJC30-08 2kv magnetron
Contextual Info: ESJC30 4 . 5 k V , 7 . 2 k V Wîfê’+ fè : Outline Drawings HIGH VOLTAGE SILICON DIODE e s j c s o i* , ESJC30 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

ESJC30-08

Abstract: ESJC30 ESJC30-05 T151
Contextual Info: ESJC30 4 .5kV, 7.2kV Si'MijÿWi-K ¡ftJ±ft3K £r ‘fs f— K : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC30U, F *rr0 ESJC30 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

ESJC30-08

Contextual Info: HVGT ESJC30-08 8kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJC30-08 Cathode Mark Lot No. o 7.0 o 1.2

Contextual Info: HVCA ESJC30-05 5kV 350mA HIGH VOLTAGE DIODE Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJC30-05 Cathode Mark Lot No. o 7.0 o 1.2

ESJC30-08

Contextual Info: HVCA ESJC30-08 8kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJC30-08 Cathode Mark Lot No. o 7.0 o 1.2

Contextual Info: HVGT ESJC30-05 5kV 350mA HIGH VOLTAGE DIODE Outline Drawings : mm ESJC30-05 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2

HV transformer 5kv

Abstract: IGNITION TRANSFORMERS collmer Voltage Multipliers 472 5KV Ignition Transformer 30KV CS52-10 CS52-12 CS52-14 CS53-16
Contextual Info: COLLMER SE MI CO N D U C T O R INC MAE D • 22 38 712 00 01 563 5 1 0 « C O L High Voltage Power Supplies/Diodes r ^ .o S g ELECTRONIC HIGH VOLTAGE POWER SUPPLIES HIGH VOLTAGE MULTIPLIERS HIGH VOLTAGE POWER SUPPLIES HV RECTIFIER ASSEMBLIES Standard and Custom Designs

ESJA04-02

Contextual Info: High Voltage Diodes Ratings and characteristics U General purpose type Type Maximum rating V rrm kV ESJA04-02 2 ESJA04-03 ESJA57-04 ESJA57-04 ESJA58-06 3 ESJA58-08 ESJA54-06 ESJA54-08 ESJA52-10 ESJA52-12 ESJA52-14 ESJA53-16 3 Therm al rating lo If s m Tc °C

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

00.118.10

Abstract: ESJA04-02 ESJA04-03 ESJA52-10 ESJA52-12 ESJA52-14 ESJA53-16 ESJA54-06 ESJA54-08 ESJA57-04
Contextual Info: High Voltage Diodes Ratings and characteristics M General purpose type Type Maximum rating V rrm kV ES JA04-02 2 ES JA04-03 3 ES JA57-04 E SJA57-04 3 ES JA58-08 ESJA54-06 4 6 8 6 ESJA54-08 8 ESJA52-10 10 ESJA52-12 ESJA52-14 12 ESJA53-16 16 ES JA 53-18 ESJA53-20

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

T35 diode

Abstract: diode T35 ESJA18 ESJA08-08 ESJA53-16A ESJA08 HB 00173 T35-4 diode ESJA04-03A ESJA09
Contextual Info: High Voltage Rectifier Diodes 1 Handling precautions Fuji Electric's high-voltage rectifier diodes were developed with emphasis on compactness. The diodes should be coated with an epoxy resin to maintain insulation during use. When handling the diodes, observe the following precautions at all

220VAC to 12VDC transformer

Abstract: cs5212 ESJA57-04 fuji 472 5KV HV transformer 5kv Ignition Transformer 30KV CS52-10 ESJA04-02 CS52-14
Contextual Info: COL L ME R S E M I C O N D U C T O R INC MAE i • D D 0 1 S B 3 510 « C O L High Voltage Power Supplies/Diodes -r-« -os g ELECTRONIC HIGH VOLTAGE POWER SUPPLIES HIGH VOLTAGE MULTIPLIERS HIGH VOLTAGE POWER SUPPLIES HV RECTIFIER ASSEMBLIES Standard and Custom Designs

ESJA53

Contextual Info: HIGH VOLTAGE DIODES Part Number V rrm lo VF tir Pkg. Length Pkg. Dia. W ire Dia. KV (mA) (V) (¿¿sec) (A) (In.) (B) (In.) (C) (In.) Resin Package, 6 0 Nanosecond Recovery ESJA98-08 8 8 23.4 .06 .256 .098 .0197 ESJA92-12 12 8 36.0 .06 .394 .118 .0236 .0197

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

FUJI ESJC04-05

Abstract: ESJC01-12B ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA88-06 ESJA88-08
Contextual Info: HighVoltage Silicon Rectifiers <§ Part Number Vrbm KV lo (mA) Vf (V) Pkg. L. t rr Pkg. Dia. Wira Dia. (in.) (in.) frisec) (in.) Resin Package, 63 Nanosecond Recovery ESJA98-06 6 8 18.0 .06 .256 .098 ESJA98-08 8 8 23.4 .06 .256 .098 .020 .020 ESJA92-12 12

Contextual Info: HIGH VOLTAGE DIODES Part N um ber V kRM lo Vf ta P kg. Length Pkg. Dia. W ire Dla. K V (m A) (V) (nsec) (A) (In.) (B) (In.) (C) (In.) Resin Package, 60 Nanosecond Recovery ESJA98-08 8 8 23.4 .098 .0197 12 8 36.0 .00 .00 .256 ESJA92-12 .394 .118 .0236 Resin Package, 90 Nanosecond Recovery

ESJC15

Abstract: ESJC15 Diode ESJC16 esjc ESJC37 ESJC13 ESJC03 ESJC04 ESJC07 ESJC30
Contextual Info: Abolishment of High Voltage Diode: model “ESJC series’’ Our High Voltage Diode, “ESJC series” has been had your custom for a long period of time. However, it became difficult to continue the stable production due to extreme small of volume of the materials and superannuation of equipment.

ESJA04-02

Contextual Info: HIGH VOLTAGE DIODES Part Number V rrm lo VF ter Pkg. L Pkg. Dia. Wire Dia. K V (mA) (V) (lu ie c ) (In.) (In.) On.) Resin Package, 60 Nanosecond Recovery ESJA98-08 6 8 23.4 .06 .256 .098 .020 ESJA92-12 12 8 36.0 .06 .394 .118 .024 Resin Package, 90 Nanosecond Recovery

Contextual Info: ESJC 30|4 . 5 k V , 7 . 2 k V 3f*—K : Outline Drawings HIGH VOLTAGE SILICON DIODE E S J C 3 0 * , y | # - 5 i a f f '> U 3 ^ 'y 7 , 4 r X iJ i+ - > i» |jg t c T iiih L f c a E S JC 30 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

ESJC30-08

Abstract: ESJA98-08 ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA83-24 ESJA88-06
Contextual Info: HIGH VOLTAGE DIODES Part Number | V rrm lo VF t* Pkg. L Pkg. Dia. Wire Dia. KV (mA) (V) (usee) (In.) (In.) (In.) Resin Package, 60 Nanosecond Recovery ESJA98-08 6 8 23.4 .06 .256 .098 .020 ESJA92-12 12 8 36.0 .06 .394 .118 .024 .020 Resin Package, 90 Nanosecond Recovery

esja59-12a

Abstract: esja52-14a
Contextual Info: s HIGH VOLTAGE DIODES Part Number V lo VF tr Pkg. Length Pkg. Dia. Wire Dia. (mA (V) (|JS 6 C ) (A) (In.) (B) (In.) (C) (In.) rrm (KV) Resin Package, 50 Nanosecond Recovery ESJA08-08 e 5 28.0 .05 .256 .098 .0197 ESJA09-12 12 5 42.0 .05 .394 .098 .0197 33