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    OHM RESISTOR 1 W 100 ROHM Search Results

    OHM RESISTOR 1 W 100 ROHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    37-1409 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    37-2182 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    AA1A3Q-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    GA4L3Z(0)-T1-AT Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation

    OHM RESISTOR 1 W 100 ROHM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor r1009

    Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
    Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02


    Original     		PDF CTM805SVSERV 107-800455-4G 127-476042-0D 130-600101-0G 190-R63300-02 774-R63301-00 774-R63302-00 774-R63303-00 849-R63301-00 892-R63301-06 transistor r1009 ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor

    Automobile Black Box

    Abstract: Power Bank Freescale ACT2801 ACT2802 ACT8945A Atmel ACT8865 power management units high power
    Text: 3Q 2014 Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4


    Original     		PDF ACT2801 ACT2801C ACT2802 ACT2802B Automobile Black Box Power Bank Freescale ACT8945A Atmel ACT8865 power management units high power

    Untitled

    Abstract: No abstract text available
    Text: USER GUIDE | UG:301 PI31xx-xx-EVAL1 Cool-Power ZVS Isolated DC-DC Converter Evaluation Board Chris Swartz Principal Applications Engineer May 2013 Contents Page Introduction 1 Product Description 2 Board Connections 2 Thermal Considerations 3 Max I/O Ratings


    Original     		PDF PI31xx-xx-EVAL1 PI31xx PI31xx-xx

    230V ac to 5V dc usb charger circuit

    Abstract: SAMA5 RK3026 s3c2416 charger pad wide
    Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4


    Original     		PDF ACT2801 ACT2801C ACT2802 ACT2802C 230V ac to 5V dc usb charger circuit SAMA5 RK3026 s3c2416 charger pad wide

    DIODE C18 ph

    Abstract: EMERSON rectifier C18 ph diode RESISTOR ROHM R20 smd diode s6 43a digi-key resistor 33 ohm 10w 0.1uF Capacitor Ceramic schottkey DIODE c19 IRLML6401TRPBF
    Text: SD307 Bill of Materials Reference Designator C1, C2 C3, C4, C5, C6, C10, C11, C14, C24, C26, C28 C7, C25, C27, C29 C8, C30, C31 C9 C12 C13, C15, C20, C21, C22, C23 C16, C17 C18, C19 D1, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11 D13 D14 J1, J2 J3, J4, J5, J6


    Original     		PDF SD307 WM17116TR-ND 111-0702-001-ND 111-0703-001-ND A26580 A26576-ND 490-1134-1-ND IRLML6401PBFCT-ND RHM75 541-750LCT-ND DIODE C18 ph EMERSON rectifier C18 ph diode RESISTOR ROHM R20 smd diode s6 43a digi-key resistor 33 ohm 10w 0.1uF Capacitor Ceramic schottkey DIODE c19 IRLML6401TRPBF

    RK3026

    Abstract: SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053
    Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….…………………. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………………. 4


    Original     		PDF ACT2801 ACT2802 ACT4501 ACT4523 RK3026 SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original     		PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
    Text: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    FP11G

    Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S
    Text: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain


    Original     		PDF FP1189 FP1189 OT-89 WJ1-4401 FP11G 113 marking code transistor ROHM FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S

    113 marking code transistor ROHM

    Abstract: A114 pnp FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114
    Text: FP31QF The Communications Edge TM 2-Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1


    Original     		PDF FP31QF 1-800-WJ1-4401 113 marking code transistor ROHM A114 pnp FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114

    fp21g

    Abstract: fp2189-g wj model marking code FP2189 FP2189-PCB1900S ML200D EL11-8 Fp2189
    Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 fp21g fp2189-g wj model marking code FP2189 FP2189-PCB1900S ML200D EL11-8

    FP21G

    Abstract: MARKING CODE 51 5 fet sot-89 FP2189 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89
    Text: FP2189 1 - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain


    Original     		PDF FP2189 FP2189 OT-89 WJ1-4401 FP21G MARKING CODE 51 5 fet sot-89 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89

    Untitled

    Abstract: No abstract text available
    Text: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain


    Original     		PDF FP31QF 28-pin FP31QF WJ1-4401

    fp31ff

    Abstract: transistor 131 349 2110 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm
    Text: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications • • • • • • Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain


    Original     		PDF FP31QF FP31QF 1-800-WJ1-4401 fp31ff transistor 131 349 2110 FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm

    fp21g

    Abstract: fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189 FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM
    Text: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 fp21g fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM

    C18pF

    Abstract: Fp2189
    Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Description Functional Diagram The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 C18pF

    Fp2189

    Abstract: No abstract text available
    Text: FP2189 1 - Watt HFET Product Information Product Features • • • • • • • • 50 – 4000 MHz ISO & EPC compliant +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Functional Diagram


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401

    WJ 3

    Abstract: No abstract text available
    Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 WJ 3

    QFN-6x6 48

    Abstract: 2W High Amplifier qfn FP31QF-F
    Text: FP31QF The Communications Edge TM 2-Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1


    Original     		PDF FP31QF 28-pin FP31QF 1-800-WJ1-4401 QFN-6x6 48 2W High Amplifier qfn FP31QF-F

    fp21g

    Abstract: fp21-g FP2189-G sot89 Marking code fp21g
    Text: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 fp21g fp21-g FP2189-G sot89 Marking code fp21g

    Untitled

    Abstract: No abstract text available
    Text: FP31QF The Communications Edge TM 2-Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1


    Original     		PDF FP31QF 28-pin FP31QF 1-800-WJ1-4401

    d 2507

    Abstract: transistor P1 P
    Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years


    Original     		PDF FP1189 OT-89 FP1189 10erating 1-800-WJ1-4401 d 2507 transistor P1 P