J15D
Abstract: J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101
Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Distributor: Laser Components GmbH, Germany, Phone: 0049 0 8142 28640, www.lasercomponents.com J15 Mercury Cadmium Telluride Detectors (2 to 26 µm) General Detector Bias and Operating Circuit D* and Responsivity vs. Bias
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allo142
J15D
J15D16-M204-S01M-60
W1 466C
DE1M
J15D14
J15D14-M204-S500U-60
J15-D
5-3CN-S01M
gold metal detectors
PA-101
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Untitled
Abstract: No abstract text available
Text: MicroAmp MB-12 Circuit Board For Analog Devices Log Detectors FEATURES • Fits Analog Devices AD8317/8319 LFCSP packages • 10 GHz frequency range • Controller or Measurement mode • Uses standard SMD passive parts • RO-4350 board material • Fits MicroAmp MH-series housings
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MB-12
AD8317/8319
RO-4350
AD8317/8319
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gold detectors circuit
Abstract: PDF PIN PHOTO DIODE DESCRIPTION detector alcohol OP58TS The Optical Devices
Text: Spec. No. : ODT-W010-82 0 Issued Date : 2004.09.20 SPECIFICATION MODEL NAME : Photo Diode MODEL NO. : OP58TS Prepared by : Checked by : Approved by : ODTech Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea Tel : 82-63-263-7626, Fax : 82-63-262-7624
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ODT-W010-82
OP58TS
OP58TS
gold detectors circuit
PDF PIN PHOTO DIODE DESCRIPTION
detector alcohol
The Optical Devices
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Circuit integrated 8002
Abstract: HSMS0005 HSMS2850 HSMS8002 Hewlett-Packard microwave pin diode sn 8002
Text: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics
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HSMS-0005/06
HSMS-8002/12
Circuit integrated 8002
HSMS0005
HSMS2850
HSMS8002
Hewlett-Packard microwave pin diode
sn 8002
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics
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HSMS-0005/06
HSMS-8002/12
5965-8855E
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Untitled
Abstract: No abstract text available
Text: Delivering 13.0A and 600V per circuit, the KK 396 Reflow Process Compatible RPC Connector System suports a lead-free solder process and is ideal for low- to mid-power wire-to-board and board-to-board applications Electronics manufacturers are being driven by consumers and environmental
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com/link/kk396
USA/KC/2014
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x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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Untitled
Abstract: No abstract text available
Text: GC9901 – GC9944 Schottky Barrier Diodes TM For Mixers and Detectors RoHS Compliant KEY FEATURES Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic
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GC9901
GC9944
GC9901-128C-QR1
GC9901-128C-QB1
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gold detectors circuit
Abstract: non HERMETIC PACKAGES GC9934 GC9901 GC9903 GC9911 GC9900-TSR GC9943 kuka
Text: GC9901 – GC9944 Schottky Barrier Diodes TM For Mixers and Detectors RoHS Compliant DESCRIPTION KEY FEATURES This series of devices meets RoHS requirements per EU Directive 2002/95/EC. • Monolithic design for lowest parasitics • Low Conversion Loss
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GC9901
GC9944
2002/95/EC.
GC9901-128C-QR1
GC9901-128C-QB1
gold detectors circuit
non HERMETIC PACKAGES
GC9934
GC9901
GC9903
GC9911
GC9900-TSR
GC9943
kuka
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Untitled
Abstract: No abstract text available
Text: HMC611 v03.0109 60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz POWER DETECTORS - CHIP 6 Typical Applications Features The HMC611 is ideal for: Wide Dynamic Range: Up to 73 dB • Cellular/PCS/3G High Accuracy: ±1 dB with 51 dB Range Up to 8 GHz • WiMAX, WiBro, WLAN, Fixed Wireless & Radar
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HMC611
HMC611
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3600 watts power amplifier circuit diagram
Abstract: HMC611
Text: HMC611 v02.0908 60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz POWER DETECTORS - CHIP 12 Typical Applications Features The HMC611 is ideal for: Wide Dynamic Range: Up to 73 dB • Cellular/PCS/3G High Accuracy: ±1 dB with 51 dB Range Up to 8 GHz
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HMC611
HMC611
3600 watts power amplifier circuit diagram
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Schottky diode Die flip chip
Abstract: police radar detector police radar detector detector MA4E1319-1 MA4E1319-2 0618 2375 MA4E1317 MA4E1318 "Schottky Barrier Diodes"
Text: MA4E1317, MA4E1318 MA4E1317 MA4E1319-2 MA4E1319-1, MA4E2160 V2 GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion
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MA4E1317,
MA4E1318
MA4E1317
MA4E1319-1,
MA4E1319-2
MA4E2160
MA4E1317
MA4E1318
MA4E1319-1
Schottky diode Die flip chip
police radar detector
police radar detector detector
MA4E1319-2
0618
2375
"Schottky Barrier Diodes"
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Pyroelectric Detectors
Abstract: schematic insb W1 466C PA-101 capacitor RC 65 8142 T gold metal detectors J15-IN J15TE2 HgCdTe TE cooled GE detector
Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
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HMC611
Abstract: radar detector receiver 3600 watts power amplifier circuit diagram
Text: HMC611 v01.0408 60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz POWER DETECTORS - CHIP 12 Typical Applications Features The HMC611 is ideal for: Wide Dynamic Range: Up to 73 dB • Cellular/PCS/3G High Accuracy: ±1 dB with 51 dB Range Up to 8 GHz
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HMC611
HMC611
radar detector receiver
3600 watts power amplifier circuit diagram
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ODS-1278
Abstract: Schottky diode Die flip chip
Text: MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Case Style ODS-1278
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MA4E1310
ODS-1278
MA4E1310
ODS-1278
Schottky diode Die flip chip
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gold metal detectors
Abstract: Schottky diode wafer
Text: Schottky barrier diode technology Signal conditioning is the major application field for Schottky barrier d io d e s : speed switching, mixing, detecting, clipping and clamping. Frequency ranges from digital to m icrowave are supported. The outstanding characteristic of Schottky diode construction Is the barrier: a metal layer deposited
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OCR Scan
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CDB7619-000
Abstract: CDE7618-000 Silicon Detector Diodes
Text: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: What HEW LETT* miltm PACKARD Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation
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OCR Scan
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PDF
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HSMS-0005/06
HSMS-8002/12
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Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
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Untitled
Abstract: No abstract text available
Text: SMARTLOAD POWER SENSING TERMINATIONS SmartlaKf romomes an RF termination with a sign# detector into one •pwstettevK&T&spart M ite s all thick-film construction, true RMS detector, and linear cesponse. Only from £MC •M icfcgyi Patent finding. Application:
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OCR Scan
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200mV/W
400mV/W
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tunnel diode
Abstract: coaxial limiter
Text: jtà i M a n A M P c< o m p a n y Limiter Tunnel Diode Detectors 0.1 -18.0 GHz ML 7718-0000 Series V2.00 Description Typical Performance This series of limiter-detectors offers similar performance advantages to the standard tunnel diode detectors but with extended RF input pow er range. A silicon PIN
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OCR Scan
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PDF
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30dBm
tunnel diode
coaxial limiter
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HSMS0001
Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
Text: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc tor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes.
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OCR Scan
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PDF
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26/Ig
HSMS0001
Silicon Point Contact Mixer Diodes
hsch 3486 zero bias schottky diode
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180 Degree hybrid ku band
Abstract: No abstract text available
Text: Universal Chip Mixer and 0 3 Alpha Detector Schottky Barrier Diodes t,.- , „• CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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OCR Scan
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PDF
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CDX76XX,
CME7660
CDB7619
CDB7620
CDC7622
180 Degree hybrid ku band
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IN5711
Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
Text: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes
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OCR Scan
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PDF
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AN988,
26/Th
IN5711
Silicon Point Contact Mixer Diodes
Microwave zero bias detector diodes
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