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    ON 408/10 TRANSISTOR Search Results

    ON 408/10 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON 408/10 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AQS225R2SZ

    Abstract: power supply tester schematic diagram AQS225R2S AQS225R2SX AQS225S AK 1037 medical ultrasonic probe schematic diagram of an electric iron
    Text: RF PhotoMOS AQS225R2S High capacity and low on resistance. RF in SOP 4 Form A type 4.4 .173 2.1 .083 10.37 .408 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Footprint SOP 2-channel type 1. High-level functions (high capacity and low on resistance) Features: Compared to predecessor (AQS225S)


    Original     		PDF AQS225R2S) 16-pin 083inch-- AQS225S) AQS225R2SZ power supply tester schematic diagram AQS225R2S AQS225R2SX AQS225S AK 1037 medical ultrasonic probe schematic diagram of an electric iron

    transistor 4500

    Abstract: MP4T6825 MP4T682500 MP4T682533 MP4T682535 MP4T682539 S21E S22E transistor r 606 j
    Text: Low Current 8 Volt, Low Noise High fT Silicon Transistor Features • • • • • • MP4T6825 Series SOT-23 Low Current Operation High fT 8 GHz Low Noise Figure with 1-5 mA Current Low Phase Noise Inexpensive Available on Tape and Reel Description The MP4T6825 series of low current silicon bipolar


    Original     		PDF MP4T6825 OT-23 OT-143 MP4T682539 transistor 4500 MP4T682500 MP4T682533 MP4T682535 MP4T682539 S21E S22E transistor r 606 j

    Untitled

    Abstract: No abstract text available
    Text: 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series SOT-23 Features • • • • • Low Voltage Operation 3 - 5V High fT (11 GHz) Low Noise Figure with 1-5 mA Current Inexpensive Available on Tape and Reel Description The MP4T6325 series of low voltage silicon bipolar


    Original     		PDF MP4T6325 OT-23 MP4T632539

    MP4T6325

    Abstract: Bipolar Transistor transistor b 1238 mount chip transistor 332 2608 surface mount transistor transistor K 1377 on 4508 TRANSISTOR MP4T632500 MP4T632533 MP4T632539
    Text: 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series SOT-23 Features • • • • • Low Voltage Operation 3 - 5V High fT (11 GHz) Low Noise Figure with 1-5 mA Current Inexpensive Available on Tape and Reel Description The MP4T6325 series of low voltage silicon bipolar


    Original     		PDF MP4T6325 OT-23 MP4T632539 Bipolar Transistor transistor b 1238 mount chip transistor 332 2608 surface mount transistor transistor K 1377 on 4508 TRANSISTOR MP4T632500 MP4T632533 MP4T632539

    MP4T6310

    Abstract: Bipolar Transistor 0107 NA SILICON TRANSISTORS transistor d 1933 MP4T631000 MP4T631033 MP4T631035 MP4T631039 S21E S22E
    Text: 3 Volt, Low Noise High fT Silicon Transistor Features • • • • • MP4T6310 Series SOT-23 High Performance at VCE = 3V Low Noise Figure at Small Currents 0.3-2 mA High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel


    Original     		PDF MP4T6310 OT-23 curr039 OT-143 MP4T631039 Bipolar Transistor 0107 NA SILICON TRANSISTORS transistor d 1933 MP4T631000 MP4T631033 MP4T631035 MP4T631039 S21E S22E

    52426

    Abstract: siliconix transistor marking TN0201T n1 marking marking codes n1 transistors sot-23 sot23 marking code 02
    Text: TN0201T Siliconix N-Ch Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS MIN (V) 20 rDS(on) MAX (W) 1.0 @ VGS = 10 V VGS(th) (V) ID (A) 1 0 to 3.0 1.0 30 0 39 0.39 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS


    Original     		PDF TN0201T O-236 OT-23V S-52426--Rev. 14-Apr-97 52426 siliconix transistor marking TN0201T n1 marking marking codes n1 transistors sot-23 sot23 marking code 02

    Untitled

    Abstract: No abstract text available
    Text: 3 Volt, Low Noise High fT Silicon Transistor Features • • • • • MP4T6310 Series SOT-23 High Performance at VCE = 3V Low Noise Figure at Small Currents 0.3-2 mA High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel


    Original     		PDF MP4T6310 OT-23 milliam31039 OT-143 MP4T631039

    Untitled

    Abstract: No abstract text available
    Text: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features • Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages and


    Original     		PDF MP4T6365 MP4T6365 OT-143 MP4T636539

    Lovoltech

    Abstract: POWERJFET LS1105 jfet transistor LVT103 lovoltech no diode jfet application LVT101 LVTS101 LVTS101N
    Text: PWRLITE-LS1105N Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “High Side” Buck and DC-DC Converters Low Rg and low Cds for high speed switching


    Original     		PDF PWRLITE-LS1105N LS1105N Lovoltech POWERJFET LS1105 jfet transistor LVT103 lovoltech no diode jfet application LVT101 LVTS101 LVTS101N

    MP4T6365

    Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
    Text: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable


    Original     		PDF MP4T6365 MP4T6365 OT-143 MP4T636539 Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23

    MP4T3243

    Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
    Text: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers


    Original     		PDF MP4T3243 OT-23 MP4T324335 Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303

    Untitled

    Abstract: No abstract text available
    Text: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Features • • • • • • • Case Style Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers


    Original     		PDF MP4T3243 OT-23 MP4T324335

    BS250

    Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
    Text: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T


    Original     		PDF TP0610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T BS250 mosfet bs250 VP0610T TP0610L TP0610T VP0610L

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET OLH2047/OLH2048/OLH2049: Photo-Transistor Hermetic Optocouplers Features • Current Transfer Ratio CTR guaranteed over –55 °C to +100 °C ambient temperature range • 2500 V electrical isolation • Standard 8-pin DIP configuration • High CTR at low input current


    Original     		PDF OLH2047/OLH2048/OLH2049: OLH2047, OLH2048, OLH2049 202294B

    MP4T856

    Abstract: 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E
    Text: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features •High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz •High Gain Bandwidth Product •8-9 GHz fT •High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz


    Original     		PDF MP4T856 OT-23 OT-143 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E

    Untitled

    Abstract: No abstract text available
    Text: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features • High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fT • High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz


    Original     		PDF MP4T856 OT-23 OT-143

    MP4T645

    Abstract: Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E
    Text: Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Case Styles Features •fT to 9 GHz •Low Noise Figure •High Associated Gain •Hermetic and Surface Mount Packages Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els •Industry Standard


    Original     		PDF MP4T645 MP4T645 MP4T64535) MP4T64539 OT-143 Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E

    MP4T243

    Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages


    Original     		PDF MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave

    Untitled

    Abstract: No abstract text available
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages


    Original     		PDF MP4T243 MP4T24300 MP4T24335

    ccfl inverter mosfets

    Abstract: Tokin LCD Inverter Board Sumida LCD Inverter tokin lcd inverter Allen Bradley POTENTIOMETERS inverter ccfl sumida allen bradley potentiometer philips ccfl inverter inverter ccfl toshiba toshiba ccfl inverter
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 515 CCFL POWER SUPPLY LT1373 DESCRIPTION Demonstration Circuit 515 is a single output CCFL inverter with dimming and over-voltage protection features. The inverter consists of a LT1373 and a Royer converter that uses bipolar transistors. The


    Original     		PDF LT1373 LT1373 DC515 and068 ccfl inverter mosfets Tokin LCD Inverter Board Sumida LCD Inverter tokin lcd inverter Allen Bradley POTENTIOMETERS inverter ccfl sumida allen bradley potentiometer philips ccfl inverter inverter ccfl toshiba toshiba ccfl inverter

    Untitled

    Abstract: No abstract text available
    Text: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use In Horizontal Deflection Output Stage 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L


    Original     		PDF BU406 O-220 BU406 O-220 BU406TU

    Lovoltech

    Abstract: LD1106S 7E02 LS1106 TO252-DPAK package LD103SG6 LS1106S jfet transistor Diode and Transistor 1980 IR 2E02
    Text: PWRLITE LS1106S High Performance N-Channel JFET Transistor with Schottky Diode Description Features Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC


    Original     		PDF LS1106S LD1106S Lovoltech LD1106S 7E02 LS1106 TO252-DPAK package LD103SG6 LS1106S jfet transistor Diode and Transistor 1980 IR 2E02

    CEM3310

    Abstract: jfet s00 jfet transistor for VCR
    Text: 25E D • bTIOMS? QQOQ251 S ■ ON CHIP S Y S T EM S CEM 3310 " T - S D - O 0! CURTIS € U C T R 0 fflU 5 tC S P « W fft€ 3 110 H ig h la n d Ave. L o s G atos Ca. 9S030, U S A Tel. 408 395-3350 Voltage Controlled Envelope Generator The C E M 3 3 10 Is a self-contained,


    OCR Scan     		PDF b71QM57 CEM3310 jfet s00 jfet transistor for VCR

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S


    OCR Scan     		PDF SUP/SUB75N03-07 O-220AB O-263 SUP75N03-07 SUB75N03-07 S-57585-- 15-Jun-98