CEM3310

Abstract: jfet s00 jfet transistor for VCR
Contextual Info: 25E D • bTIOMS? QQOQ251 S ■ ON CHIP S Y S T EM S CEM 3310 " T - S D - O 0! CURTIS € U C T R 0 fflU 5 tC S P « W fft€ 3 110 H ig h la n d Ave. L o s G atos Ca. 9S030, U S A Tel. 408 395-3350 Voltage Controlled Envelope Generator The C E M 3 3 10 Is a self-contained,

52426

Abstract: siliconix transistor marking TN0201T n1 marking marking codes n1 transistors sot-23 sot23 marking code 02
Contextual Info: TN0201T Siliconix N-Ch Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS MIN (V) 20 rDS(on) MAX (W) 1.0 @ VGS = 10 V VGS(th) (V) ID (A) 1 0 to 3.0 1.0 30 0 39 0.39 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

Contextual Info: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S

MP4T6365

Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable

MP4T3243

Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers

MP4T856

Abstract: 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E
Contextual Info: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features •High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz •High Gain Bandwidth Product •8-9 GHz fT •High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz

MP4T645

Abstract: Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E
Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Case Styles Features •fT to 9 GHz •Low Noise Figure •High Associated Gain •Hermetic and Surface Mount Packages Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els •Industry Standard

MP4T243

Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages

Lovoltech

Abstract: LD1106S 7E02 LS1106 TO252-DPAK package LD103SG6 LS1106S jfet transistor Diode and Transistor 1980 IR 2E02
Contextual Info: PWRLITE LS1106S High Performance N-Channel JFET Transistor with Schottky Diode Description Features Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC

ADVANCED POWER TECHNOLOGY

Abstract: J201-4 j3306
Contextual Info: 0910-150Rel 1 0910 – 150 150 Watts - 36 Volts, 50µs, 2% Radar 870 - 1000 MHz GENERAL DESCRIPTION The 0910-150 is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at fifty microseconds pulse width, two percent duty factor across the band 870 to 1000 MHz. This

4202 BD TRANSISTOR

Abstract: lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853
Contextual Info: CDQ0303-QS 500 MHz to 6000 MHz Dual, Ultra Low-Noise, High IP3 Amplifier Advanced Product Information May 2005 V1.0 1 of 18 Features ❏ Matched Pair of Transistors for Optimum Ballanced Amplifier Design ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT)

lovoltech

Abstract: jfet transistor vertical JFET LS203N S203N TRANSISTOR a 1980
Contextual Info: www.Lovoltech.com PWRLITE-LS203N High Performance N-Ch Vertical Power JFET Transistor “No Body Diode” transistor replaces 2 MOSFETs devices with 1 JFET Low Rdson to improve efficiencies Low drop-out for longer time operations per charge Very low leakage in off conditions

ad 1204

Abstract: TO252-DPAK package Lovoltech TO252-DPAK LD1106S POWERJFET LD103SG6 026E-02 J-FET TRANSISTOR
Contextual Info: PWRLITE LD1106S High Performance N-Channel POWERJFETTM with Schottky Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

pn diode

Abstract: POWERJFET A 673 C2 transistor Lovoltech LD1010DA LU1010DA LD1010D jfet transistor LU1010D
Contextual Info: PWRLITE LU1010DA High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

0910-60M

Abstract: transistor 936
Contextual Info: 0910-60M 0910 – 60M 60 Watts - 40 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-60M is an internally matched, COMMON BASE transistor capable of providing 60 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

TRANSISTOR BD 137-10

Contextual Info: CFS0303-SB Advanced Product Information March 2004 V1.3 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz

RF 150M

Abstract: 0910-150M 150M Advanced Power Technology
Contextual Info: 0910-150M 0910 – 150M 150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed

Lovoltech

Abstract: LD1010DA TO252-DPAK package POWERJFET pn diode LD1010D
Contextual Info: PWRLITE LD1010DA High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

ld1014d

Abstract: Lovoltech pn diode POWERJFET
Contextual Info: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

Lovoltech LU1014D

Abstract: LU1014D LD1014D Lovoltech LU1014 pn diode POWERJFET ld1014
Contextual Info: PWRLITE LU1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

sr03x

Abstract: IC SR03x 400CA GN2470 GN2470K4 VN2460 igbt 50v 3a siemens igbt application note IGBT 400 amp VN2460 equivalent
Contextual Info: GN2470 IGBT Initial Release Insulated Gate Bipolar Transistor Description Features Low voltage drop at high currents Optimized for use with the Supertex SR03x Inductorless Off-Line Switcher Industry standard TO-252 D-Pak package 700V breakdown voltage rating

TRANSISTOR BD 137-10

Contextual Info: CFS0303-SB Advanced Product Information February 2004 V1.2 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz

Contextual Info: 1214GN-280LV 280 Watts - 50 Volts, 200 s, 20% L-Band Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 16.5dB