ON SEMICONDUCTOR MARKING C21 Search Results

C2171

Contextual Info: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation  Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design

220 ac to 24 dc SMPS charger circuit diagram

Abstract: SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS 5V SMPS charger circuit diagram 220 ac voltage regulator SMPS without transformer C2162DX2 MJE130 PTXX SMPS SOT23-6 sot23-6 marking code C2161DX2
Contextual Info: C2161DX2 and C2162DX2 Datasheet Primary Sensing SMPS Controller For 5* USB Charging Applications ADVANTAGES • • • • • • • • Suitable for applications with or without cable such as USB chargers Can meet USB OMTP undershoot requirement < 30 mW no-load power consumption 5* rating

Q62702-C2136

Abstract: Q62702-C2137
Contextual Info: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137

Q62702-C2134

Abstract: Q62702-C2135
Contextual Info: PNP Silicon Darlington Transistors BCP 28 BCP 48 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 29/49 NPN ● Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134 Q62702-C2135

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCP 28 BCP 48 For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134

Contextual Info: [ /Title CD74H C21, CD74H CT21 /Subject (High Speed CMOS Logic Dual 4Input CD54HC21, CD74HC21, CD74HCT21 Data sheet acquired from Harris Semiconductor SCHS131C High-Speed CMOS Logic Dual 4-Input AND Gate August 1997 - Revised September 2003 Features Description

Contextual Info: SIEM ENS PNP Silicon Darlington Transistors • • • • BCP 28 BCP 48 For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134

Contextual Info: SIEMENS NPN Silicon Darlington Transistors • • • • BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types: BCP 28/48 PNP Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136

PW350s

Abstract: 01673
Contextual Info: CYStech Electronics Corp. Spec. No. : C214M3 Issued Date : 2006.11.10 Revised Date : Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTD1383M3 Description • The BTD1383M3 is a darlington amplifier transistor. • Pb-free package Symbol Outline

BTNA06N3

Abstract: MARKING 1G TRANSISTOR
Contextual Info: Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description • The BTNA06N3 is designed for use in general purpose amplification and switching application.

BTNA14N3

Contextual Info: CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2006.07.11 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTNA14N3 Description • The BTNA14N3 is a darlington amplifier transistor • Complementary to BTPA64N3.

BTD2568L3

Contextual Info: Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2006.01.11 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD2568L3 Features • High BVCEO, 400V minimum • Pb-free package Symbol Outline BTD2568L3 SOT-223

c215a

Abstract: 1902 transistor BTNA13A3 BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit

C214A

Abstract: 1902 transistor CYStech Electronics BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit

C214A

Abstract: 1902 transistor BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : 2005.11.30 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3.

BTD1383L3

Contextual Info: Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1383L3 Description • The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3 SOT-223

BTNA14N3

Contextual Info: CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14N3 Description • The BTNA14N3 is a darlington amplifier transistor • Complementary to BTPA64N3.

BTD2568L3

Contextual Info: Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD2568L3 Features • High BVCEO, 400V minimum Symbol Outline BTD2568L3 SOT-223 C E C B：Base C：Collector

sot-23 MARKING CODE 3d

Abstract: 3D marking sot23 BTNA44N3 BTPA94N3 sot-23 Marking 3D
Contextual Info: CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTNA44N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.

Contextual Info: Centrar CMR2-02 CMR2-04 CMR2-06 CMR2-10 Semiconductor Corp. GENERAL PURPOSE RECTIFIER 2.0 AMP, 200 THRU 1,000 VOLTS FEATURES: • LOW COST • SPECIAL SELECTIONS AVAILABLE • HIGH RELIABILITY • SUPERIOR LOTTO LOT CONSISTENCY • GLASS PASSIVATED CHIP • "C" BEND CONSTRUCTION PROVIDES

transistor c202

Abstract: C202 C204 C206 C210 CMR2-02 CMR2-04 CMR2-06 CMR2-10 TR13
Contextual Info: Central CMR2-02 CMR2-04 CMR2-06 CMR2-10 TM Semiconductor Corp. GENERAL PURPOSE RECTIFIER 2.0 AMP, 200 THRU 1,000 VOLTS FEATURES: • LOW COST • SPECIAL SELECTIONS AVAILABLE • HIGH RELIABILITY • SUPERIOR LOT TO LOT CONSISTENCY • GLASS PASSIVATED CHIP

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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Contextual Info: Central” CMR2-02 CMR2-04 CMR2-06 CMR2-10 Semiconductor Corp. GENERAL PURPOSE RECTIFIER 2.0 AMP, 200 THRU 1,000 VOLTS FEATURES: • • • • • • LOW COST SPECIAL SELECTIONS AVAILABLE HIGH RELIABILITY SUPERIOR LOT TO LOT CONSISTENCY GLASS PASSIVATED CHIP

b2 diode

Abstract: marking 62 marking code b3
Contextual Info: CM6200 Advance Information EMI Filters with ESD Protection for Microphone Interface http://onsemi.com Description ON Semiconductor’s CM6200 is a 3x3, 8−bump EMI filter with ESD protection device for microphone interface applications in a CSP form factor, 0.4 mm pitch. The CM6200 is fully compliant with