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    ON SEMICONDUCTOR MARKING CODE SOT Search Results

    ON SEMICONDUCTOR MARKING CODE SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR MARKING CODE SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


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    PDF AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


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    PDF AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363

    On semiconductor date Code

    Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
    Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363


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    PDF OT-23, OT-143, SCT-595, SCT-598 OT-323, OT-343, OT-363 OD-123, OD-323, SCD-80 On semiconductor date Code SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363

    CMLDM7003E

    Abstract: CMLDM7003JE CMLDM7003J
    Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel


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    PDF CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE CMLDM7003E CMLDM7003E: CMLDM7003JE: 200mA CMLDM7003J

    specifications of MOSFET

    Abstract: on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02
    Text: PRODUCT announcement Small Signal MOSFETs TLP Tiny Leadless Package SOT-563 SOT-883L TLM621H Single or Dual (Single) (Single) features • Single and Dual configurations Sample Devices • N-Channel and P-Channel devices available • Dual MOSFET with ESD protection (CMLDM7003)


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    PDF OT-563 OT-883L TLM621H CMLDM7003) 280mA, OT-563 CMLDM7003 CMLDM8002A CMLDM7002A specifications of MOSFET on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02

    marking c08

    Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
    Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode


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    PDF CMLDM8002A CMLDM8002AJ OT-563 CMLDM8002A: CMLDM8002AJ: CMLDM8002A CMLDM8002AJ CMLDM8002AJ, 500mA marking c08 MARKING CODE 24 TRANSISTOR

    marking code 17 surface mount diode

    Abstract: MARKING KV SOT-23 CL05 marking code vc sot "Transient Voltage Suppressor" transient voltage suppressor sot23 marking code KV Transient Voltage Suppressor application notes marking d4 sot23 CSL05
    Text: Central CSL05 CSL05D SURFACE MOUNT ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CSL05 Single and CSL05D (Dual) types are ultra low capacitance transient voltage suppressors packaged in the SOT-23 surface


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    PDF CSL05 CSL05D OT-23 marking code 17 surface mount diode MARKING KV SOT-23 CL05 marking code vc sot "Transient Voltage Suppressor" transient voltage suppressor sot23 marking code KV Transient Voltage Suppressor application notes marking d4 sot23 CSL05

    CMLDM7002AG

    Abstract: CMLDM7002AJ CMLDM7002A
    Text: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


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    PDF CMLDM7002A CMLDM7002AG* CMLDM7002AJ OT-563 200mA CMLDM7002A: CMLDM7002AG CMLDM7002AJ CMLDM7002A

    CMLDM7003

    Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
    Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


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    PDF CMLDM7003 CMLDM7003G* CMLDM7003J OT-563 CMLDM7003 CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G

    marking code C37

    Abstract: transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D
    Text: Central CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS SOT-563 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak)


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    PDF CMLT3410 CMLT7410 CMLT3474 OT-563 CMLT3410 CMLT7410 CMLT3474 100MHz CMLT3410) CMLT7410) marking code C37 transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D

    SOT23-6 MARKING 5X

    Abstract: "MARKING DIAGRAM" 98AS sot23-5 e.1 marking
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 5−LEAD CASE 1212−01 ISSUE A DATE 28 JAN 2011 SCALE 2:1 A 5 E 1 A2 0.05 S B D A1 4 2 L 3 L1 5X e E1 b 0.10 C M C B A S S C RECOMMENDED SOLDERING FOOTPRINT* 3.30 XXX = Specific Device Code M = Date Code


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    PDF OT-23 SOT23-6 MARKING 5X "MARKING DIAGRAM" 98AS sot23-5 e.1 marking

    019REF

    Abstract: a3he
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE E DATE 09 FEB 2010 SCALE 4:1 X Y D 6 5 4 1 2 3 A HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD


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    PDF OT-963 527AD-01 527AD 019REF a3he

    Marking f1 SOT26

    Abstract: c04s MARKING D3 d2 diode series d3 series DIODE marking code D3 high voltage diode high voltage diodes SOT-26 CMXD2004S
    Text: Central CMXD2004S CMXD2004SR TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL, IN-SERIES HIGH VOLTAGE SWITCHING DIODES SOT-26 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004S and CMXD2004SR consists of Dual, In-Series pairs of High Voltage Silicon Switching Diodes,


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    PDF CMXD2004S CMXD2004SR OT-26 CMXD2004SR CMXD2004S: CX04S CMXD2004SR: C04SR Marking f1 SOT26 c04s MARKING D3 d2 diode series d3 series DIODE marking code D3 high voltage diode high voltage diodes SOT-26 CMXD2004S

    CMLDM8002A

    Abstract: CMLDM8002AJ marking cg8
    Text: Central CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment


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    PDF CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, 200mA CMLDM8002AJ marking cg8

    CMXDM7002A

    Abstract: X02A 2N7002
    Text: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


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    PDF CMXDM7002A OT-26 CMXDM7002A 2N7002 500mA 500mA, 200mA 200mA, 400mA 05-December X02A

    X02A

    Abstract: CMXDM7002A 2N7002
    Text: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


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    PDF CMXDM7002A OT-26 CMXDM7002A 2N7002 500mA, 200mA 200mA, 400mA 14-November X02A

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 SOT−323 CASE 419−04 ISSUE N DATE 11 NOV 2008 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e


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    PDF SC-70 OT-323)

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7003TEG ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL SILICON MOSFET SOT-563 CASE FEATURES: • ESD protection up to 2kV • Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Central TM Semiconductor Corp.


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    PDF CMLDM7003TEG OT-563 115mA 200mA

    1a8t

    Abstract: CMKZ5221B CMKZ5222B CMKZ5223B CMKZ5224B CMKZ5225B CMKZ5226B CMKZ5227B CMKZ5228B CMKZ5229B
    Text: Central CMKZ5221B THRU CMKZ5261B TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM TRIPLE ISOLATED SILICON ZENER DIODES 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKZ5221B Series contains three 3 isolated Silicon Zener Diodes packaged in an ULTRAminiTM SOT-363 surface mount


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    PDF CMKZ5221B CMKZ5261B CMKZ5221B OT-363 CMKZ5256B CMKZ5257B CMKZ5258B CMKZ5259B CMKZ5260B 1a8t CMKZ5222B CMKZ5223B CMKZ5224B CMKZ5225B CMKZ5226B CMKZ5227B CMKZ5228B CMKZ5229B

    Untitled

    Abstract: No abstract text available
    Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T


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    PDF FJC790 FJC790 FJC690 OT-89 FJC790TF

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B−01 ISSUE B SCALE 4:1 DATE 27 MAY 2005 D −X− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES


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    PDF OT-553, 463B-01

    marking E3 sot89

    Abstract: my marking code sot 89 sot89 E3
    Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings


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    PDF FJC690 FJC690 FJC790 OT-89 FJC690TF marking E3 sot89 my marking code sot 89 sot89 E3

    On semiconductor date Code sot-143

    Abstract: TR13
    Text: Package Details - SOT-143 Mechanical Drawing Lead Code: Part Marking: 2-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-December 2003)


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    PDF OT-143 EIA-481-1-A FeNi42 SnPb10 11-February On semiconductor date Code sot-143 TR13

    MARKING 93 SOT89

    Abstract: DIN iec 286-3 part 1 smd marking code eg On semiconductor date Code on semiconductor marking code sot SMD MARKING CODE 93 smd marking SOT343 smd sot-89 marking code SOT89 bc smd marking code BA RF
    Text: S IE M E N S Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6.MW4 Manufacturer EH co Date code Year / Month Type code Example Siemens EH CD 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer


    OCR Scan
    PDF OT-23, OT-143, OT-323, OT-343, OT-363 OD-123, OD-323 OT-223, MARKING 93 SOT89 DIN iec 286-3 part 1 smd marking code eg On semiconductor date Code on semiconductor marking code sot SMD MARKING CODE 93 smd marking SOT343 smd sot-89 marking code SOT89 bc smd marking code BA RF