527AD Search Results
527AD Price and Stock
Norgren V14R527A-D313AVALVE, PNEUMATIC DIRECT SOLENOID , NUGGET 120 |
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V14R527A-D313A | Bulk | 1 |
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Norgren V14R527A-D318AVALVE, PNEUMATIC DIRECT SOLENOID , NUGGET 120 |
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V14R527A-D318A | Bulk | 1 |
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Norgren V14B527A-D213AVALVE, 5/2 SOL SPR SDMO 24V PIN DOWN, NUGGET 120 |
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V14B527A-D213A | Bulk | 1 |
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527AD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AND8381Contextual Info: AND8381/D SOT-963 527AD Dual MOSFET Package Board Level Application and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe APPLICATION NOTE ON Semiconductor INTRODUCTION and aforementioned vias is shown in Figure 3 of the subsequent section. |
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AND8381/D OT-963 527AD AND8381 | |
019REF
Abstract: a3he
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OT-963 527AD-01 527AD 019REF a3he | |
Contextual Info: MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 DTC114EP/D | |
Contextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 |
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NST3946DP6T5G NST3946DP6T5G 23/SOTâ 323/SOTâ NST3946DP6/D | |
Contextual Info: MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 DTC114ED/D | |
NSBC144WPDP6Contextual Info: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
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NSBC114EPDP6T5G NSBC114EPDP6T5G NSBC114EPDP6/D NSBC144WPDP6 | |
sot963
Abstract: NSBA123TDP6
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NSBA123TDP6 DTA123TD/D sot963 | |
Contextual Info: MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 47 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single |
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MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6 DTA143ZD/D | |
Contextual Info: MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 Dual NPN Bias Resistor Transistors R1 = 4.7 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 DTC143ZD/D | |
ESD5205P6T6GContextual Info: ESD5205 Transient Voltage Suppressors Low Capacitance ESD Protection Diode for High Speed Data Line http://onsemi.com The ESD5205 transient voltage suppressor is designed to protect high speed data lines from ESD. Low capacitance and low ESD clamping voltage make this device an ideal solution for protecting |
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ESD5205 OT-963 527AD ESD5205/D ESD5205P6T6G | |
Contextual Info: NSBC123TPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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NSBC123TPDP6 DTC123TP/D | |
SMUN5311DW1T3G
Abstract: NSBC114EPDP6T5G
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MUN5311DW1, SMUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 DTC114EP/D SMUN5311DW1T3G NSBC114EPDP6T5G | |
Contextual Info: MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 DTC114YD/D | |
306 marking code transistorContextual Info: MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 DTC123JP/D 306 marking code transistor | |
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Contextual Info: MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 Dual NPN Bias Resistor Transistors R1 = 47 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 DTC144ED/D | |
Contextual Info: MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 DTA144WD/D | |
Contextual Info: NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 |
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NST847BPDP6T5G NST847BPDP6T5G 23/SOTâ 323/SOTâ NST847BPDP6T5G* NST847BPDP6/D | |
Contextual Info: MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 DTA144WD/D | |
463A
Abstract: NSBC143EDXV6
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MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 DTC143ED/D 463A NSBC143EDXV6 | |
sot963Contextual Info: NSBC115TDP6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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NSBC115TDP6 DTC115TD/D sot963 | |
NSBC114EDP6T5G
Abstract: NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 527AD NSBC124EDP6 NSBC144WDP6
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NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 527AD NSBC124EDP6 NSBC144WDP6 | |
NSBA114EDP6T5G
Abstract: NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD
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NSBA114EDP6T5G OT-963 NSBA114EDP6/D NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD | |
NTUD3171PZT5G
Abstract: 527AD
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NTUD3171PZ OT-963 NTUD3171PZ/D NTUD3171PZT5G 527AD | |
Contextual Info: NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in |
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NST3906DP6T5G NST3906DP6T5G 23/SOTâ 323/SOTâ NST3906DP6/D |