ON2173 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2173 Reflective Photosensor • Outline ON2173 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor

CNB1009

Abstract: ON2173
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as

CNB1009

Abstract: ON2173
Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 (ON2173) Reflective Photosensor Overview Unit : mm (1.0) 7.4±0.2 1.0 1.0 19.0±0.3 2-9.5±0.2 Applications Detection of paper, film and cloth Optical mark reading (15.5) (2.54) 2.5 min. Small size, light weight

Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 (ON2173) Reflective photosensor Non-contact point SW, object sensing Unit: mm 4.0±0.2 (1.0) 19.0±0.3 2-9.5±0.2 1.0 7.4±0.2 1.0 φ2.2±0.2 9.5±0.3 • Fast response: tr , tf = 6 µs (typ.) • Small size, light weight

Reflective photosensor

Abstract: high sensitivity reflective phototransistor 100S ON2173
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2173 Reflective Photosensor • Outline ON2173 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si photo transistor

CNB1009

Abstract: ON2173
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview  Features  Fast response: tr , tf = 6.0 s (typ.)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

CNC1S001

Contextual Info: Photo Couplers • Photosensors for Interrupting Photo Interrupters Type No. Package No. Features If V cEO (mA) (V ) 50 35 Ultra small type H Reflective Photosensors (Photo Reflectors) lc min. IC E O tr,tl VcE(sat) max. max. (mA) (nA) typ, 0's) 0.04 100

on3131

Abstract: HD-61 BD4r2 ON3205
Contextual Info: Photo Couplers • Reflective Photosensors Photo Reflectors ■ Photosensors for Interrupting (Photo Interrupters) Package No. 104-1 ON 1003 104-2 ON 1004 104-3 104-4 AON1021 A ON 1022 IS4-1 A ON 1023 IF4-1 A ON 1024 104-5 ON1102 IS4-2 ON1105 IS4-3 ON1108 104-6

ON2160

Abstract: ON2152 PI-234 ON2270 SY102 EE-SH3 ON2153 ON2170 ON2171 MARK UU1
Contextual Info: - 338- « M £ tt £ * *¡£$1 mm ON2152 fò t ss & «6 t# tt ± I f le (mA) tmA) 20 0.6 100 1 8 I f V cb min (% ) (mA) (V) VCE {T,= 255C) ( r a=25*c) / 9 9 - ^ •■ -t. max (V) I c/ I f 4 rv ^ ir typ (pi s) # le (mA) ffif m m % I f 3 1 .? ? i ì - ?Pd1

ON2179

Abstract: ON217 ON1109 ON1112 ON3131 R004-3 ON3205 ON1122 ON2152 ON3171
Contextual Info: Photo Couplers • Photosensors for Interrupting Photo Interrupters Type No. Package No. Features If t,t( typ, ICEO lc (mA) (V) min (mA) 50 35 0.04 104-1 Ultra small type ON1002 VcEO ■ Reflective Photosensors (Photo Reflectors) ON1003 104-2 Ultra small type

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

ON1501

Abstract: LN29RCPX LNG242RDA ON1120 CNZ1215 LN21RPH-TA ON1024 ON3131 LN39GCPX on1128
Contextual Info: -y 7‘LED Surface Mounting Chip LED GW Bi-Color Type Type No. Lighting Color LN2162C68— TR ÎÊ *\fÎi^5 È Î§ Pure Green Orange Absolute Maximum Ratings (Ta=25"C) L ig h tin g C o lo r PD (m W ) 1 F( m A ) l FP( m A ) * V r (V) T o p r ( iC ) P u re G re e n

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ON1120

Abstract: ON1112 59 ON2179 CNZ1120 VISIBLE LIGHT PHOTOdarlington TRANSISTOR ON3171 ON1387 ON1113 reflective photocoupler CNA1006N
Contextual Info: Characteristics List • Photocoupler ■ Hologram Unit 17 Photocoupler ■ Photointerrupter Absolute Maximum Ratings Electro • Optical Characteristics Ta = 25°C Part No. IF mA VCEO (V) IF (mA) CNA1006N IC min. (mA) ICEO max. (µA) t r , tf typ. (µs)

ON3105

Abstract: HUL7281 ON1024 LDHU01
Contextual Info: Photo Couplers • Reflective Photosensors Photo Reflectors ■ Integrated Photosensors Package No. Vcc V ol (V) 0.25 1Fth (mA) loH ON1402A/B IS5-1 (V) 4.5 to 16 ON1403/VB 105-2 4.5 to 16 0.25 100 5 105-1 4.5 to 16 0.14 100 4 ON1413A/B ON1414A/B 105-1 2.2 to 7